Abstract: During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

Abstract: In sophisticated SOI devices, the thickness of the active semiconductor layer in the N-channel transistor may be reduced compared to the P-channel transistor for a given transistor configuration, thereby obtaining a significant increase in performance of the N-channel transistor without negatively affecting performance of the P-channel transistor.

Abstract: A method of reducing a pressure within a first cavity of a subsea device is disclosed which includes transferring fluid within the first cavity to an accumulator, increasing a pressure of the fluid within the accumulator and, after increasing the pressure of the fluid within the accumulator, transferring at least some of the fluid in the accumulator into a second cavity, wherein the second cavity is at a higher pressure than said first cavity.

Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.

Abstract: In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material systems formed on the basis of a dual stress liner approach may be reduced.

Abstract: A screen assembly for a shale shaker comprising a panel (500) and a support structure (600), the panel (500) having an area provided with a multiplicity of apertures and at least one layer of screening material arranged over the multiplicity of apertures, wherein said panel (500) is removable from said support structure (600).

Abstract: A method and apparatus is provided for associating operational data with workpieces and correlating the operational data with yield data. The method comprises processing a workpiece using a processing tool, associating the operational data with the workpiece during the processing of the workpiece and measuring the yield data associated with the processed workpiece. The method further comprises correlating the operational data with the yield data to make one or more determinations.

Abstract: A method is provided for controlling delivery of packets over a synchronous control channel in a wireless system employing the High Rate Packet Data (HRPD) standard. The synchronous channel is comprised of a plurality of slots, and a first packet is sent over the synchronous control channel in a first one of the plurality of slots along with an indication of a second one of the plurality of slots in which a second packet will be delivered. Thereafter, the second packet is sent over the control channel in the second one of the plurality of slots. Subsequent packets are handled similarly.

Abstract: In sophisticated transistor elements, integrity of sensitive gate materials may be enhanced while, at the same time, the lateral offset of extension regions may be reduced. To this end, at least a portion of the extension regions may be implanted at an early manufacturing stage, i.e., in the presence of a protective liner material, which may, after forming the extension regions, be patterned into a protective spacer structure used for preserving integrity of the sensitive gate electrode structure.

Abstract: Methods for automatically controlling a vibratory separator for processing drilling fluid are disclosed. The methods include introducing material to a vibratory separator, and sensing with a sensor apparatus a state parameter indicative of operation of the vibratory separator and providing a signal indicative of a value of the state parameter to a control apparatus. Then, with the control apparatus, automatically controlling the vibratory separator based on the level of the state parameter.

Abstract: A conductive cap material for a copper region may be provided with enhanced etch resistivity by taking into consideration the standard electrode potential of one or more of the species contained therein. For example, instead of a conventionally used CoWP alloy, a modified alloy may be used, by substituting the cobalt species by a metallic species having a less negative standard electrode potential, such as nickel. Consequently, device performance may be enhanced, while at the same time the overall process complexity may be reduced.

Abstract: In a test structure for determining dielectric breakdown events of a metallization system of semiconductor devices, a built-in compliance functionality may allow reliable switching off of the test voltage prior to causing high leakage currents, which may conventionally result in significant damage. Consequently, further failure analysis may be possible after the occurrence of a dielectric breakdown event.

Abstract: The present invention provides methods implemented in a base station having a plurality of antennas and one or more user terminals. One embodiment of the method includes receiving feedback from at least one user in response to transmitting a first frame to said at least one user. The first frame is formed by pre-coding at least one symbol using at least one first code word selected from at least one first code book associated with the at least one user. The method also includes transmitting at least one second frame to the user(s). The second frame(s) are pre-coded using at least one second codeword selected from at least one second codebook. The second codebook(s) determined based on the feedback and the first codeword(s).

Abstract: An apparatus operatively coupled to a well having a production casing positioned therein, the apparatus including a first device having and internal bore, a second device having an internal bore, and a fracture isolation sleeve disposed at least partially within the internal bores of the first and second devices, wherein the fracture isolation sleeve has an internal diameter that is greater than or equal to an internal diameter of the production casing.

Abstract: A method includes defining a hierarchy associated with a test system including a plurality of test units for testing integrated circuit devices. At least some of the test units have a plurality of sockets. The hierarchy includes a first level including a first plurality of entities each associated with one of the sockets and at least a second level including a second plurality of entities each associated with a grouping of the sockets. State data associated with operational states of the sockets is received. A set of state metrics is generated for each entity at each level of the hierarchy based on the state data. Each set of state metrics identifies time spent in the operational states.

Abstract: In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

Abstract: In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.

Abstract: By removing an outer spacer of a transistor element, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, employing a wet chemical etch process, it is possible to position a stressed contact liner layer more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region, without affecting circuit elements in the P-type regions.

Abstract: A growth mask provided for the deposition of a threshold adjusting semiconductor alloy may be formed on the basis of a deposition process, thereby obtaining superior thickness uniformity. Consequently, P-channel transistors and N-channel transistors with an advanced high-k metal gate stack may be formed with superior uniformity.

Abstract: By providing a CMP stop layer in a metal gate stack, the initial height thereof may be efficiently reduced after the definition of the deep drain and source areas, thereby providing enhanced process conditions for forming highly stressed dielectric materials. Consequently, the dielectric material may be positioned more closely to the channel region substantially without deteriorating gate conductivity.