Abstract: An apparatus that controls access by multiple IP cores to a bus is provided. The apparatus includes a main controller and multiple sub controllers, each of the sub controllers being associated with each IP cores. The main controller switches connection between each of the IP cores and the bus according to a schedule predetermined based on predetermined time slices. Each of the sub controllers controls access by the IP core to the bus according to a schedule under the control of the main controller. Embodiments of the present invention provide method and apparatus to ensure real-time accessibility to a bus shared by multiple IP cores and improve bus use efficiency.

Abstract: Embodiments that that distribute replacement policy bits and operate the bits in cache memories, such as non-uniform cache access (NUCA) caches, are contemplated. An embodiment may comprise a computing device, such as a computer having multiple processors or multiple cores, which has cache memory elements coupled with the multiple processors or cores. The cache memory device may track usage of cache lines by using a number of bits. For example, a controller of the cache memory may manipulate bits as part of a pseudo least recently used (LRU) system. Some of the bits may be in a centralized area of the cache. Other bits of the pseudo LRU system may be distributed across the cache. Distributing the bits across the cache may enable the system to conserve additional power by turning off the distributed bits.

Abstract: An embodiment of the invention provides a semiconductor structure, which may include a stud of a first conductive material formed inside a dielectric layer; a via of a second conductive material having a bottom and sidewalls with the bottom and the sidewalls being covered by a conductive liner, and the bottom being formed directly on top of the stud and being in contact with the via through the conductive liner; and one or more conductive paths of a third conductive material connecting to the via through the conductive liner at the sidewalls of said the. A method of making the semiconductor structure is also provided.

Abstract: A method of training an Optical Proximity Correction (OPC) model comprises symmetrizing a complex design to be a test pattern having orthogonal symmetry. Symmetrizing may comprise establishing a axis of symmetry passing through the design, thereby dividing the design into two portions; deleting one of the two portions; and mirror-imaging the other of the two portions about the axis of symmetry. The design may be centered.

Abstract: Embodiments of the present invention provide a semiconductor device that includes a transistor device having a first, a second, and a third node; and an interconnect structure having at least one wire and the wire having a first and a second end with the first end of the wire being connected to one of the first, the second, and the third node of the transistor device. The wire is conductive and adapted to provide an operating current in a first direction during a normal operating mode, and adapted to provide a repairing current in a second direction opposite to the first direction during a repair mode of the semiconductor device. In one embodiment the transistor device is a bipolar transistor with the first, second, and third nodes being an emitter, a base, and a collector of the bipolar transistor. The wire is connected to one of the emitter and the collector. Method of operating the semiconductor device and current supplying circuit for the semiconductor device are also disclosed.

Abstract: A design structure is provided for a microelectronic serial driver. The serial driver is operable to transmit a differential pattern signal during a burst interval and a predetermined common mode voltage level during a second interval between adjacent burst intervals, the serial driver including at least one pre-driver and a driver coupled to an output of the pre-driver for transmitting the differential communication signal. A switching circuit is operable to switch the serial driver between a first power supply voltage level for the burst interval and the predetermined common mode voltage level, wherein the predetermined common mode voltage level is independent of variations in power supply voltage conditions and temperature conditions.

Abstract: Embodiments of the invention provide a method of forming a field-effect-transistor (FET). The method includes implanting one or more n-type dopants to create one or more implanted regions with at least a portion of the implanted regions being designated as regions for forming source and drain extensions of the FET; activating the implanted regions; etching with a chlorine based etchant to create openings in the implanted regions, and forming the source and drain extensions by exptaxially growing embedded silicon germanium in the openings. Structure of a semiconductor field-effect-transistor made thereof is also provided.

Abstract: Embodiments that dynamically reorganize data of cache lines in non-uniform cache access (NUCA) caches are contemplated. Various embodiments comprise a computing device, having one or more processors coupled with one or more NUCA cache elements. The NUCA cache elements may comprise one or more banks of cache memory, wherein ways of the cache are horizontally distributed across multiple banks. To improve access latency of the data by the processors, the computing devices may dynamically propagate cache lines into banks closer to the processors using the cache lines. To accomplish such dynamic reorganization, embodiments may maintain “direction” bits for cache lines. The direction bits may indicate to which processor the data should be moved. Further, embodiments may use the direction bits to make cache line movement decisions.

Abstract: Systems, methods and media for selectively closing pages in a memory in anticipation of a context switch are disclosed. In one embodiment, a table is provided to keep track of open pages for different processes. The table comprises rows corresponding to banks of memory and columns corresponding to cores of a multi-core processing system. When a context switch signal is received, the system unsets a bit in a column corresponding to the core from which the process is to be context-switched out. If no other process is using a page opened by the process the page is closed.

Abstract: An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.

Abstract: Embodiments of the present invention provide a method of forming local interconnect for semiconductor devices. The method includes depositing a blanket layer of conductive material over one or more semiconductor devices; creating a pattern of local interconnect covering a portion of the blanket layer of conductive material; removing rest of the blanket layer of conductive material that is not covered by the pattern of local interconnect; forming the local interconnect by the portion of the blanket layer of conductive material to connect the one or more semiconductor devices.

Abstract: Embodiments of the present invention provide a method of performing photo-mask correction. The method includes identifying a hot-spot in a photo-mask that violates one or more predefined rules; creating a window area in the photo-mask that surrounds the hot spot; categorizing the window area; selecting a solution, from a library of pre-computed solutions, based on a category of the window area; and applying the solution to the hot spot. A service-oriented architecture (SOA) system that synchronizes the design to the process is also provided.

Abstract: An embodiment of the invention provides a method of creating local metallization in a semiconductor structure, and the use of local metallization so created in semiconductor structures. In one respect, the method includes forming an insulating layer on top of a semiconductor substrate; creating a plurality of voids inside the insulating layer, with the plurality of voids spanning across a predefined area and being substantially confined within a range of depth below a top surface of the insulating layer; creating at least one via hole in the insulating layer, with the via hole passing through the predefined area; and filling the via hole, and the plurality of voids inside the insulating layer through at least the via hole, with a conductive material to form a local metallization. A semiconductor structure having the local metallization is also provided.

Abstract: Embodiments of the present invention provide a method of placing printing assist features in a mask layout. The method includes providing a design layout having one or more designed features; generating a set of parameters, the set of parameters being associated with one or more printing assist features (PrAFs); adding the one or more PrAFs of the set of parameters to the design layout to produce a modified design layout; performing simulation of the one or more PrAFs and the one or more designed features on the modified design layout; verifying whether the one or more PrAFs are removable based on results of the simulation; and creating a set of PrAF placement rules based on the set of parameters, if the one or more PrAFs are verified as removable. The set of PrAF placement rules may be used in creating a final set of PrAF features to be used for creating the mask layout.

Abstract: Embodiments of the present invention provide a method of forming borderless contact for transistor in a replacement metal gate process. The method includes forming a gate on top of a substrate and forming spacers adjacent to sidewalls of the gate; lowering height of the spacers to expose a top portion of the sidewalls of the gate; depositing an etch-stop layer covering the spacers and the upper portion of the sidewalls of the gate; making an opening at a level that is above the spacers and in the upper portion of the sidewalls to expose the gate; and replacing material of the gate from the opening with a new gate material thereby forming a replacement gate. The method further creates a via opening in an inter-level dielectric layer surrounding the gate and spacers, with the via opening exposing the etch-stop layer; removing the etch-stop layer and fill the via opening with a metal material to form borderless contact.

Abstract: Embodiments of the present invention provide a method of performing printability verification of a mask layout. The method includes creating one or more tight clusters; computing a set of process parameters associated with a point on said mask; comparing said set of process parameters to said one or more tight clusters; and reporting an error when at least one of said process parameters is away from said one or more tight clusters.

Abstract: A device for patterning structures on a substrate includes an imaging device having a scanning tip, a light emitting device, and a space around the scanning tip. The space comprises a vapor of a material which is suitable for Chemical Vapor Deposition onto the substrate when decomposed. The light emitting device is adapted to emit a light beam, which has an intensity not capable to decompose the vapor, onto the scanning tip in such a way that an electromagnetic field induced by the light beam near the scanning tip is high enough to decompose the vapor.

Abstract: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free heteroaromatic sulfonate anionic component. The photoacid generators preferably contain an onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer. The compositions are especially useful for forming material patterns using 193 nm (ArF) imaging radiation.

Abstract: A machine-readable medium thereupon stored a design structure; the design structure includes a receiver for a data communications system. The receiver includes a data path for receiving a data signal from a data channel, the data path comprising an automatic gain control (AGC) loop; and, a signal detector for generating a data valid signal indicative of the validity of the data signal in response to detection of the data signal on the channel exceeding a threshold and in dependence upon gain information from the AGC loop in the data path.

Abstract: A receiver for a data communications system comprises: a data path for receiving a data signal from a data channel, the data path comprising an automatic gain control (AGC) loop; and, a signal detector for generating a data valid signal indicative of the validity of the data signal in response to detection of the data signal on the channel exceeding a threshold and in dependence upon gain information from the AGC loop in the data path.