Abstract: An integrated module assembly can include: an optical integrated circuit having first and second optical devices; a PCB having first and second holes therein, where the optical integrated circuit is coupled upside down to a first side of the PCB; and first and second lenses coupled to a second side of the PCB, where the first and second sides of the PCB are opposite thereto; and where the first lens is in alignment with the first hole and the first optical device, and the second lens is in alignment with the second hole and the second optical device.

Abstract: A memory device can include a nonvolatile memory (NVM) cell array, data path circuits, coupled between the NVM cell array and an output of the device, that are configured to enable access to the NVM cell array via a plurality of bit lines. A first charge pump can generate a first voltage supply. A second charge pump can generate a second voltage supply. Switch circuits are configured to, in a first mode, couple the first voltage supply to data path circuits, and in a second mode, couple the second voltage supply to the data path circuits. The first charge pump, the second charge pump, the switch circuits, the data path circuits and the NVM cell array are formed with the same integrated circuit substrate. Corresponding methods and systems are also disclosed.

Abstract: A method of controlling a memory device can include: determining, by the memory device, a time duration in which the memory device is in a standby mode; automatically switching the memory device from the standby mode to a power down mode in response to the time duration exceeding a predetermined duration; exiting from the power down mode in response to signaling from a host device via an interface; and toggling a data strobe when data is ready to be output from the memory device in response to a read command from the host device.

Abstract: An integrated circuit device can include a plurality of nonvolatile memory elements having values that vary randomly or pseudo-randomly from one another; a selection circuit configured to select a plurality of nonvolatile memory elements that vary randomly or pseudo-randomly in response to a received challenge value; and sense circuits configured to generate a response value based on the values of the selected nonvolatile memory elements. Related methods and systems are also disclosed.

Abstract: A system can include memory circuits configured to execute memory access operations in response to commands, a serial interface circuit configured to receive commands, including at least a first type command, and a controller circuit configured to generate a command complete acknowledgement that is output at the interface circuit after an operation indicated by the first type command has been completed by the memory circuits.

Abstract: A method of controlling a read request can include: receiving, in a host device, the read request from a bus master, where the host device is coupled to a memory device by an interface; determining a configuration state of the read request; comparing an attribute of the read request against a predetermined attribute stored in the host device; adjusting the configuration state of the read request when the attribute of the read request matches the predetermined attribute; and sending the read request with the adjusted configuration state from the host device to the memory device via the interface.

Abstract: A selection circuit includes: a first selection device coupled between a write IO line and a first node; a second selection device coupled between a read IO line and a second node; a third selection device controllable by a first address decode signal, and coupled between a first bit line and a third node; a fourth selection device controllable by a second address decode signal, and coupled between a second bit line and the third node; a first suppression device controllable by a write enable signal, and coupled between the second node and ground; a second suppression device controllable by a read enable signal, and coupled between the first node and ground; a first isolation device controllable by the write enable signal, and coupled between the first and third nodes; and a second isolation device controllable by the read enable signal, and coupled between the second and third nodes.

Abstract: A method of controlling a memory device can include: receiving, by an interface, a write command from a host; beginning execution of a write operation on a first array plane of a memory array in response to the write command, where the memory array includes a plurality of memory cells arranged in a plurality of array planes; receiving, by the interface, a read command from the host; reconfiguring the write operation in response to detection of the read command during execution of the write operation; beginning execution of a read operation on a second array plane in response to the read command; and restoring the configuration of the write operation after the read operation has at least partially been executed.

Abstract: A memory device can include a plurality of banks, each bank including a memory cell array of nonvolatile (NV) memory cells; a plurality of charge pumps, including a first charge pump and second charge pump; and a switch circuit. The switch circuit can be configured to, in a first mode, connect the first charge pump to first circuits of the banks and isolate the second charge pump from the first circuits, and in a second mode, isolate the first charge pump from the first circuits and connect the second charge pump to the first circuits.

Abstract: An integrated circuit device can include a plurality of access transistors formed in a substrate having control terminals connected to word lines that extend in a first direction; a plurality of two-terminal programmable impedance elements formed over the substrate; at least one conductive plate structure formed on and having a common conductive connection to, the programmable impedance elements, and extending in at least the first direction; a plurality of storage contacts that extend from a first current terminal of each access transistor to one of the programmable impedance elements; a plurality of bit lines formed over the at least one conductive plate structure, the bit lines extending in a second direction different from the first direction; and a plurality of bit line contacts that extend from a second current terminal of each access transistor through openings in the at least one plate structure to one of the bit lines.

Abstract: A memory device can include a plurality of memory cells formed in a substrate, each having a resistive element programmable between at least two different resistance states, including memory cells configured to store data received by the memory device, and reference cells; a reference circuit formed in the substrate configured to generate at least a first reference resistance from resistances of a plurality of reference cells; a sense circuit formed in the substrate coupled to the memory cells and at least the first reference resistance and configured to compare a resistance of a selected memory cell to at least the first reference resistance to determine the data stored by the selected memory cell.

Abstract: An integrated circuit (IC) device can include static random access memory (SRAM) cells that each include a pair of latching devices, and first and second resistive elements disposed over the latching devices. The first resistive element can be conductively connected to a first data latching node by a first vertical connection. The second resistive element can be conductively connected to a second data latching node by a second vertical connection. Each resistive element can include at least one memory layer that is capable of being programmed between at least a high and lower resistance state by application of electric fields, the resistive elements having only the high resistance state.

Abstract: A memory device can include: a memory array with memory cells arranged as data lines; an interface that receives a read command requesting bytes of data in a consecutively addressed order from an address of a starting byte; a first buffer that stores a first data line from the memory array that includes the starting byte; a second buffer that stores a second data line from the memory array, which is consecutively addressed with respect to the first data line; output circuitry configured to access data from the buffers, and to sequentially output each byte from the starting byte through a highest addressed byte of the first data line, and each byte from a lowest addressed byte of the second data line until the requested data bytes has been output; and a data strobe driver that clocks each byte of data output by a data strobe on the interface.

Abstract: A method of controlling a memory device can include: receiving, by an interface, a write command from a host; beginning execution of a write operation on a first array plane of a memory array in response to the write command, where the memory array includes a plurality of memory cells arranged in a plurality of array planes; receiving, by the interface, a read command from the host; reconfiguring the write operation in response to detection of the read command during execution of the write operation; beginning execution of a read operation on a second array plane in response to the read command; and restoring the configuration of the write operation after the read operation has at least partially been executed.

Abstract: A memory device can include: a memory array arranged to store data lines; an interface that receives a first read command requesting bytes of data in a consecutively addressed order from a starting byte; a cache memory having a first buffer storing a first data line including the starting byte, and a second buffer storing a second data line, from the cache memory or the memory array; output circuitry that accesses data from the first buffer, and sequentially outputs each byte from the starting byte through a highest addressed byte of the first data line; and from the second buffer and sequentially outputs each byte from a lowest addressed byte of the second data line until the requested bytes of data have been output in order to execute the first read command, the contents of the first and second buffers being maintained in the cache memory.

Abstract: A memory device can include: a non-volatile storage register configured to store an active reset polling enable bit that corresponds to a reset operation; a controller configured to control execution of the reset operation on the memory device; an operation completion indicator configured to provide a reset recovery indication external to the memory device when the reset operation has completed and the active reset polling enable bit is set; and a command decoder configured to receive a command to be executed on the memory device in response to the reset recovery indication.

Abstract: A method of controlling an ultra-deep power down (UDPD) mode in a memory device, can include: receiving a write command from a host via an interface; beginning a write operation on the memory device to execute the write command; reading an auto-UDPD (AUDPD) configuration bit from a status register; switching the interface to a Single SPI mode in response to the write command and the AUDPD configuration bit being set; completing the write operation on the memory device; automatically entering the UDPD mode upon completion of the write operation in response to the AUDPD configuration bit being set; and entering a standby mode upon completion of the write operation in response to the AUDPD configuration bit being cleared.

Abstract: A method of controlling a memory device can include: (i) receiving a first read command for a critical byte, where the critical byte resides in a first group of a memory array on the memory device; (ii) reading the critical byte from the memory array in response to the first read command, and providing the critical byte; (iii) reading a next byte in the first group; (iv) outputting the next byte from the first group when a clock pulse; (v) repeating the reading the next byte and the outputting the next byte for each byte in the first group; (vi) reading a first byte in a second group of the memory array, where the second group is sequential to the first group, and where each group is allocated to a cache line; and (vii) outputting the first byte from the second group when a clock pulse is received.

Abstract: A memory element can include a first electrode; at least one switching layer formed over the first electrode; a second electrode layer; and at least one conductive cap layer formed over the second electrode layer having substantially no grain boundaries extending through to the second electrode layer; wherein the at least one switching layer is programmable between different impedance states by application of electric fields via that first and second electrode. Methods of forming such memory elements are also disclosed.

Abstract: A method can include, by operation of a controller circuit, writing data into a volatile memory portion formed in an integrated circuit substrate of a memory device. In response to first conditions, date can be written from the volatile memory portion into a nonvolatile memory portion formed in the same integrated circuit substrate as the volatile memory portion. The nonvolatile memory portion can store the data in two terminal memory elements re-programmable between at least two different resistance states.