Patents Assigned to Advanced Analog Technology, Inc
  • Isolated transistor
    Publication number: 20080191277
    Abstract: Various integrated circuit devices, in particular a transistor, are formed inside an isolation structure which includes a floor isolation region and a trench extending from the surface of the substrate to the floor isolation region. The trench may be filled with a dielectric material or may have a conductive material in a central portion with a dielectric layer lining the walls of the trench. Various techniques for terminating the isolation structure by extending the floor isolation region beyond the trench, using a guard ring, and a forming a drift region are described.
    Type: Application
    Filed: February 27, 2008
    Publication date: August 14, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: Donald R. Disney, Richard K. Williams
  • High-efficiency DC/DC voltage converter including down inductive switching pre-regulator and capacitive switching post-converter
    Publication number: 20080158915
    Abstract: A DC/DC converter includes a pre-regulator stage, which may include a Buck converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of the pre-regulator stage or the post-converter stage. The pre-regulator steps the input DC voltage down by a variable amount depending on the duty factor, and the post-converter steps the voltage at the output of the pre-regulator up or down by an positive or negative integral or fractional value. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.
    Type: Application
    Filed: August 8, 2007
    Publication date: July 3, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: Richard K. Williams
  • High-efficiency DC/DC voltage converter including up inductive switching pre-regulator and capacitive switching post-converter
    Publication number: 20080157733
    Abstract: A DC/DC converter includes a pre-regulator stage, which may include a boost converter, and a post-converter stage, which may include a charge pump. The duty factor of the pre-regulator stage is controlled by a feedback path that extends from the output terminal of the pre-regulator stage or the post-converter stage. The pre-regulator steps the input DC voltage up by a variable amount depending on the duty factor, and the post-converter steps the voltage at the output of the pre-regulator up or down by an positive or negative integral or fractional value. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.
    Type: Application
    Filed: August 8, 2007
    Publication date: July 3, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: Richard K. Williams
  • High-efficiency DC/DC voltage converter including capacitive switching pre-converter and up inductive switching post-regulator
    Publication number: 20080157732
    Abstract: A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a boost converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of the DC/DC converter to an input terminal in the post-regulator stage. The pre-converter steps the input DC voltage up or down by a positive or negative integral or fractional value, and the post-regulator steps the voltage up by a variable amount depending on the duty factor at which the post-regulator is driven. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.
    Type: Application
    Filed: August 8, 2007
    Publication date: July 3, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: Richard K. Williams
  • Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
    Publication number: 20080122006
    Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
    Type: Application
    Filed: October 30, 2007
    Publication date: May 29, 2008
    Applicants: Advanced Analogic Technologies, Inc., Advanced Analogic Technologies (Hong Kong) Limited
    Inventors: Richard K. Williams, Michael E. Cornell, Wai Tien Chen
  • Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
    Publication number: 20080116513
    Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
    Type: Application
    Filed: October 30, 2007
    Publication date: May 22, 2008
    Applicants: Advanced Analogic Technologies, Inc., Advanced Analogic Technologies (Hong Kong) Limited
    Inventors: Richard K. Williams, Michael E. Cornell, Wai Tien Chan
  • Battery Charger Apparatus With A Digital Charge Reduction Loop
    Publication number: 20080111521
    Abstract: A battery charger apparatus for charging a battery, comprises a charge-current control circuit for receiving a charge-current control signal to control an amount of charge current being drawn from an input source, e.g.
    Type: Application
    Filed: November 14, 2006
    Publication date: May 15, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: John Sung Ko So, David Alan Brown
  • Supply Power Control with Soft Start
    Publication number: 20080094865
    Abstract: Charge storage devices (e.g., batteries or supercapacitors) need to be charged from time to time. In an apparatus, to protect a charge storage device as well as the supply used to charge it, the apparatus typically includes power loop control circuitry. One approach to implementing the power loop control employs a temperature sensor in combination with soft start circuitry in order to protect the circuitry from a rapidly increasing temperature when charge current increases. The soft start circuitry allows for controlled step-wise increase and regulation of the current. The approach preferably allows for selecting the number and resolution of such incremental steps. Various embodiments of the invention include devices and methods for controlling power and may take into account temperature in step-wise regulation of the charge current.
    Type: Application
    Filed: May 16, 2007
    Publication date: April 24, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: John So, David Yen Wai Wong
  • Charging Scheme
    Publication number: 20080094042
    Abstract: Mobile devices have limited power sources. In some cases, such as camera flash operations in cell phones or digital cameras, the power required to provide bright illumination is significant and exceeding the battery voltage level. In order to supply burst power or continuous high power to light sources, such as white LEDs (light emitting diodes), mobile devices typically employ charge storage functioning as energy reservoir that can supply the required power. One such charge storage is a supercapacitor that can supply the needed power repeatedly by discharging and recharging. Various embodiments of the present invention include devices and methods for providing the charge energy and controlling the charge and discharge operations.
    Type: Application
    Filed: November 14, 2006
    Publication date: April 24, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: Bruno Ferrario
  • Current Limit Detector
    Publication number: 20080088998
    Abstract: Devices, such as mobile devices, may be exposed, to short circuit and output overload events. To protect against such events, mobile devices typically include current limit circuits. Some current limit circuits may involve user programmable function. User programmable function may need accurate current limit detectors. One approach to improving resolution and accuracy of current limit detectors using a single resistive device is to magnify the operating current range. Various embodiments of the present invention include devices and methods for detecting pre-programmed current limits.
    Type: Application
    Filed: May 22, 2007
    Publication date: April 17, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: John So
  • Current Limit Control with Current Limit Detector
    Publication number: 20080088997
    Abstract: Devices, such as mobile devices, may be exposed to short circuit and output overload events. To protect against such events, mobile devices typically include circuitry to limit currents so as not to exceed a pre-programmed current limit. Various embodiments of the present invention include devices and methods for detecting pre-programmed current limits and for limiting currents in response to such detection. In some embodiments, both the current limit detector and the current limit controller circuitry include scaled current switches. The scaling may be substantially similar between the programmed-current limit detector and the current limit controller circuitry.
    Type: Application
    Filed: May 22, 2007
    Publication date: April 17, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: John So
  • System and Method for Detection of Multiple Current Limits
    Publication number: 20080088290
    Abstract: Devices, such as mobile devices, may be exposed to short circuit and output overload events. To protect against such events, mobile devices typically include current limit circuits. Some current limit circuits may involve user programmable function. User programmable function may need accurate current limit detectors. Various embodiments of the present invention include devices and methods for detecting one or more programmed current limits. Some embodiments allow for a user application to select among parallel or serial configurations of current detection circuitry. Each such configuration may include multiple resistive devices of different resistive values.
    Type: Application
    Filed: May 22, 2007
    Publication date: April 17, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventor: John So
  • Low-noise DC/DC convertor with controlled diode conduction
    Publication number: 20080084197
    Abstract: The synchronous rectifier MOSFET in a Buck or boost DC/DC converter is operated as a current source rather than being turned off, thereby reducing undesirable losses in efficiency, the generation of unwanted electrical and radiated noise, and numerous other potential problems, particularly when the converter is operating in a light-load condition.
    Type: Application
    Filed: August 8, 2007
    Publication date: April 10, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: Richard K. Williams, Kevin P. D'Angelo
  • PWM boost system and start-up method thereof
    Patent number: 7352162
    Abstract: A PWM (pulse width modulation) boost system includes a boost circuit, a voltage dividing circuit, a comparator, a PWM circuit, a pre-oscillator, and a current limit circuit. A start-up method of the PWM boost system includes (1) providing an error voltage; (2) generating a PWM signal according to the error voltage; (3) controlling a switch in a boost circuit with the PWM signal, so as to control an inductor current flowing through a boost inductor in the boost circuit; (4) charging a capacitor in the boost circuit with the inductor current, wherein charges stored in the capacitor define a DC output voltage; and (5) providing a feedback voltage according to the DC output voltage to adjust the error voltage.
    Type: Grant
    Filed: January 9, 2007
    Date of Patent: April 1, 2008
    Assignee: Advanced Analog Technology, Inc.
    Inventors: Yung Ching Chang, Yen Kuo Lo, Wen Chia Pi
  • High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
    Publication number: 20080067586
    Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.
    Type: Application
    Filed: November 5, 2007
    Publication date: March 20, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: Richard Williams, Donald Disney, Jun-Wei Chen, Wai Chan, HyungSik Ryu
  • High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
    Publication number: 20080067585
    Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.
    Type: Application
    Filed: November 5, 2007
    Publication date: March 20, 2008
    Applicants: Advanced Analogic Technologies, Inc., Advanced Analogic Technologies (Hong Kong) Limited
    Inventors: Richard Williams, Donald Disney, Jun-Wei Chen, Wai Chan, Hyung Ryu
  • High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
    Publication number: 20080067588
    Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.
    Type: Application
    Filed: November 5, 2007
    Publication date: March 20, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: Richard Williams, Donald Disney, Jun-Wei Chen, Wai Chan, HyungSik Ryu
  • High-voltage bipolar-CMOS-DMOS integrated circuit devices and modular methods of forming the same
    Publication number: 20080061368
    Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.
    Type: Application
    Filed: November 5, 2007
    Publication date: March 13, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: Richard Williams, Donald Disney
  • Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
    Publication number: 20080061375
    Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
    Type: Application
    Filed: October 30, 2007
    Publication date: March 13, 2008
    Applicant: Advanced Analogic Technologies, Inc.
    Inventors: Richard Williams, Michael Cornell, Wai Chen
  • Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology
    Publication number: 20080061377
    Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.
    Type: Application
    Filed: October 30, 2007
    Publication date: March 13, 2008
    Applicants: Advanced Analogic Technologies, Inc., Advanced Analogic Technologies (Hong Kong) Limited
    Inventors: Richard Williams, Michael Cornell, Wai Chan