Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Abstract: A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

Abstract: In a trench-gated MOSFET including an epitaxial layer over a substrate of like conductivity and trenches containing thick bottom oxide, sidewall gate oxide, and conductive gates, body regions of the complementary conductivity are shallower than the gates, and clamp regions are deeper and more heavily doped than the body regions but shallower than the trenches. Zener junctions clamp a drain-source voltage lower than the FPI breakdown of body junctions near the trenches, but the zener junctions, being shallower than the trenches, avoid undue degradation of the maximum drain-source voltage. The epitaxial layer may have a dopant concentration that increases step-wise or continuously with depth. Chained implants of the body and clamp regions permits accurate control of dopant concentrations and of junction depth and position. Alternative fabrication processes permit implantation of the body and clamp regions before gate bus formation or through the gate bus after gate bus formation.

Abstract: Devices, such as mobile devices, may be exposed to short circuit and output overload events. To protect against such events, mobile devices typically include current limit circuits. Some current limit circuits may involve user programmable function. User programmable function may need accurate current limit detectors. One approach to improving resolution and accuracy of current limit detectors using a single resistive device is to magnify the operating current range. Various embodiments of the present invention include devices and methods for detecting pre-programmed current limits.

Abstract: A lateral trench MOSFET includes a trench containing a device segment and a gate bus segment. The gate bus segment of the trench is contacted by a conductive plug formed in a dielectric layer overlying the substrate, thereby avoiding the need for the conventional surface polysilicon bridge layer. The conductive plug is formed in a substantially vertical hole in the dielectric layer. The gate bus segment may be wider than the device segment of the trench. A method includes forming a shallow trench isolation (STI) while the conductive material in the trench is etched.

Abstract: Charge storage devices (e.g., batteries or supercapacitors) need to be charged from time to time. In an apparatus, to protect a charge storage device as well as the supply used to charge it, the apparatus typically includes power loop control circuitry. One approach to implementing the power loop control employs a temperature sensor in combination with soft start circuitry in order to protect the circuitry from a rapidly increasing temperature when charge current increases. The soft start circuitry allows for controlled step-wise increase and regulation of the current. The approach preferably allows for selecting the number and resolution of such incremental steps. Various embodiments of the invention include devices and methods for controlling power and may take into account temperature in step-wise regulation of the charge current.

Abstract: All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

Abstract: A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

Abstract: The circuit for fixing the peak current of an inductor includes an operating current, a ramp-type boost converter and a comparator. The magnitude of the operating current is proportional to that of the voltage source of the inductor. The ramp-type boost converter is connected to the operating current. One input end of the comparator is connected to a reference voltage, and the other end is connected to the output of the ramp-type boost converter. The output of the comparator is connected to the gate of a power transistor, which controls the turn-on time of the inductor.

Abstract: Devices, such as mobile devices, may be exposed, to short circuit and output overload events. To protect against such events, mobile devices typically include current limit circuits. Some current limit circuits may involve user programmable function. User programmable function may need accurate current limit detectors. One approach to improving resolution and accuracy of current limit detectors using a single resistive device is to magnify the operating current range. Various embodiments of the present invention include devices and methods for detecting pre-programmed current limits.

Abstract: A DC/DC voltage converter includes an inductive switching voltage regulator and a capacitive charge pump connected in series between the input and output terminals of the converter. The charge pump has a second input terminal connected to the input terminal of the converter. This reduces the series resistance in the current path by which charge is transferred from the capacitor in the charge pump to the output capacitor and thereby improves the ability of the converter to respond to rapid changes in current required by the load.

Abstract: A buck-boost switching regulator includes two buck switches and two boost switches. Two ramp voltages VY and VY are generated. The voltage VY is compared to a voltage VEA1 that is proportional to the output of the switching regulator. This defines the duty cycle of the two buck switches. The voltage VX is compared to a voltage VEA2 that is inversely proportional to the output of the switching regulator. This defines the duty cycle of the two boost switches. The regulator seamlessly transitions between Buck, Boost and Buck-Boost modes depending on input and output conditions.

Abstract: A semiconductor substrate includes a pair of trenches filled with a dielectric material. Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing. Therefore, semiconductor devices can be spaced more closely together on the substrate, and the packing density of the devices can be increased. Also trench constrained doped region diffuse faster and deeper than unconstrained diffusions, thereby reducing the time and temperature needed to complete a desired depth diffusion. The technique may be used for semiconductor devices such as bipolar transistors as well as isolation regions that electrically isolate the devices from each other. In one group of embodiments, a buried layer is formed at an interface between an epitaxial layer and a substrate, at a location generally below the dopant in the mesa.

Abstract: The oscillation circuit includes an output current mirror, a P-N complementary current mirror, a P-type current mirror and an N-type current mirror. The P-N complementary current mirror has the same structure as the output current mirror but has current that is only 1/k times the current of the output current mirror, wherein k is greater than 1. The P-type current mirror connects to the P-N complementary current mirror, and has current that is m times the current of the P-N complementary current mirror, where m is greater than 1. The N-type current mirror has one end connected to the P-type current mirror and another end connected to the output current mirror. The N-type current mirror has current that is n times the current of the P-type current mirror, where m × n k ? 1 , and n is greater than 1.

Abstract: A DC/DC converter includes a pre-converter stage, which may include a charge pump, and a post-regulator stage, which may include a Buck converter. The duty factor of the post-regulator stage is controlled by a feedback path that extends from the output terminal of the DC/DC converter to an input terminal in the post-regulator stage. The pre-converter steps the input DC voltage up or down by a positive or negative integral or fractional value, and the post-regulator steps the voltage down by a variable amount depending on the duty factor at which the post-regulator is driven. The converter overcomes the problems of noise glitches, poor regulation, and instability, even near unity input-to-output voltage conversion ratios.