Abstract: An apparatus and method are presented for identifying and mapping functional failures in an integrated circuit (IC) due to timing errors therein based on the generation of functional failures in the IC. This is done by providing a set of input test vectors to the IC and adjusting one or more: of the IC voltage, temperature or clock frequency; the rate at which the test vectors are provided to the IC; or the power level of a focused laser beam used to probe the IC and produce localized heating which changes the incidence of the functional failures in the IC which can be sensed for locating the IC circuit elements responsible for the functional failures. The present invention has applications for optimizing the design and fabrication of ICs, for failure analysis, and for qualification or validation testing of ICs.

Abstract: The scalable virtual timer system or subsystem implements multiple hardware timers with minimal silicon overhead. In one embodiment, for each virtual timer of a plurality of virtual timers, a content addressable memory stores a sum of an “initial state” of a free running counter and a desired count duration for the virtual timer. When the stored value matches a current state of the free running counter, the content addressable memory generates a terminal count for the virtual timer. In an alternative embodiment, for each virtual timer, a period register of a set of period registers stores a sum of a desired count duration for a virtual timer and an “initial state” of the free running counter. A comparator of a set of comparators generates a terminal count for a virtual timer when a current state of the free running counter matches the sum stored in a period register associated with the virtual timer.

Abstract: Bridging between nickel silicide layers on a gate electrode and source/drain regions along silicon nitride sidewall spacers is prevented by forming a relatively thick silicon oxide liner on the side surfaces of the gate electrode and adjacent surface of the semiconductor substrate before forming the silicon nitride sidewall spacers thereon. Embodiments include forming a silicon dioxide liner at a thickness of about 200 Å to about 600 Å prior to forming the silicon nitride sidewall spacers thereon.

Abstract: A method for polishing wafers includes polishing a process layer formed on a wafer, the process layer overlying a grating structure; illuminating at least a portion of the process layer and the grating structure; measuring light reflected from the illuminated portion of the process layer and the grating structure to generate a reflection profile; comparing the measured reflection profile to a target reflection profile having an acceptable degree of planarity; and terminating the polishing of the process layer based on the comparison of the measured reflection profile and the target reflection profile. A metrology tool adapted to measure a wafer having a grating structure and a process layer formed over the grating structure after initiation of a polishing process includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the process layer overlying the grating structure.

Abstract: An array threshold voltage test mode for a flash memory device is disclosed. During the test mode, a test voltage is routed directly to the gates of the flash memory transistors selected by a given address. If the test voltage causes the selected transistors to change state by crossing their threshold voltage level, the change will be reflected in the data outputs of the device. By varying the test voltages and the addresses and monitoring the data outputs, the array threshold voltage distribution can be determined for the entire device.

Abstract: Method for stepping identification and bond pad crater jeopardy identification in integrated circuits and apparatus which performs the method, A unique device, a polysilicon meander, is formed under each bond pad in the integrated circuit device. Connected to the meander is circuitry for determining the electrical, and hence mechanical, integrity of the meander. Failure of the meander by reason of microcrack formation in the several layers under the meander is detected by the high resistance of the meander. The circuitry will also resolve any potential mismatch between the actual mask revision of the integrated circuit and the corresponding revision of the test program.

Abstract: A microcontroller has many miscellaneous logics. The miscellaneous logic can include input/outputs of combinational logic or peripheral devices of the microcontroller, storage devices such as latches, or registers. The miscellaneous logic is coupled to multiple stages of scan cells. The multiple stages can be used as a buffer while the last stage of scan cells are scanned out. A predetermined stage of scan cells are coupled together to form a scan path where data from the miscellaneous logic can be outputted to an external memory. In one embodiment, the predetermined stage is the last stage of scan cells. A trigger signal is used to shift the data from the miscellaneous logic to the next stage of scan cells. Once the last stage of scan cells are loaded, a clocking signal can be provided so that the data in the predetermined stage of scan cells is scanned out. The present invention provides among other things, a graceful way to capture data from miscellaneous logic of the microcontroller using scan hardware.

Abstract: A semiconductor-on-insulator (SOI) chip. The SOI chip having a substrate; a buried oxide (BOX) layer disposed on the substrate; and an active layer disposed on the BOX layer, the active layer divided into a first tile and a second tile, the first tile having a first thickness and the second tile having a second thickness, the second thickness being smaller than the first thickness; wherein the BOX layer is formed under the active layer in an area of the first tile by implanting oxygen ions with a first energy level and a first dosage and the BOX layer is formed under the active layer in an area of the second tile by implanting oxygen ions with a second energy level and a second dosage.

Abstract: Cu or a Cu alloy is deposited to partially fill openings in a dielectric layer and then annealed. Incomplete filling leaves room in the openings to accommodate a volume change associated with grain growth and, hence, prevents the generation of voids. The openings are then completely filled, annealed a second time and then planarized, as by CMP. Embodiments include partially filling about 70% to about 90% of the volume of the trenches and then annealing before completely filling the trenches.

Abstract: Deleterious roughness of metal silicide/doped Si interfaces arising during conventional salicide processing for forming shallow-depth source and drain junction regions of MOS transistors and/or CMOS devices is avoided, or at least substantially reduced, by increasing the dopant implantation energy to position the maximum source/drain dopant concentration depth below rather than above the depth to which silicidation reaction occurs, thereby minimizing the concentration of dopant in the metal silicide. The invention enjoys particular utility in forming NiSi layers on As-doped Si substrates.

Abstract: A method of forming a conductor pattern on a base with uneven topography includes placing conductor material on the base, placing a hard mask material on the conductor material, planarizing an exposed surface of the hard mask material, and placing a layer of resist on the hard mask material. The resist is patterned and the patterned resist is used in selectively etching the hard mask material, with the hard mask material used in selectively etching the underlying conductor material. By planarizing the hard mask material prior to placing a layer of resist thereupon, uniformity of the resist coating is enhanced and depth of focus problems in exposing the resist are reduced.

Abstract: A line predictor caches alignment information for instructions. In response to each fetch address, the line predictor provides alignment information for the instruction beginning at the fetch address, as well as one or more additional instructions subsequent to that instruction. The alignment information may be, for example, instruction pointers, each of which directly locates a corresponding instruction within a plurality of instruction bytes fetched in response to the fetch address. The line predictor may include a memory having multiple entries, each entry storing up to a predefined maximum number of instruction pointers and a fetch address corresponding to the instruction identified by a first one of the instruction pointers. Furthermore, each entry may store additional information regarding the terminating instruction within the entry. In one embodiment, the additional information includes an indication of the branch displacement when the terminating instruction is a branch instruction.

Abstract: An invalid configuration detection resource for identifying and reporting conflicts between system resources of a microcontroller or other device is provided. Selected system registers within each resource are monitored by discrete hardware logic within the invalid configuration detection resource. For each resource, a status register provides an encoding of the configuration for that resource. The invalid configuration detection resource then compares the status registers for invalid combinations, and encodes this information in a system status register. Alternatively, the invalid configuration detection resource monitors each selected system register, independent of the resource to which it belongs. Improper combinations of registers are then encoded in a system status register. An alternative embodiment uses software to replace the discrete hardware logic with a table that specifies invalid register combinations.

Abstract: Adder circuitry is provided based on a reduced mathematical method to provide high-speed hexadecimal addition. A first adder adds the least significant binary digits of two hexadecimal numbers to provide a Digit1 and a Dot1, and a second adder adds the second least significant binary digits to provide a Digit2 plus a Dot1 as a Sum2 and a CarryA. A secondary adder adds the Dot1 and the Sum2 to provide the sum of Digit2 plus Dot2 and Dot1 as a SumA. A generator generates a Dot2 of hexadecimal “1” for certain values of the Sum2 and the CarryA, and a detector triggers an output device, which outputs a hexadecimal “0”, to output the Dot2 in response to a certain pattern of hexadcecimal numbers in the Dot1 and the Sum2. Thus, the least signifigant digit of the added hexadecimal numbers is Digit1, the second least significant digit is SumA, and the third least significant digit is the output of the output device.

Abstract: A method and apparatus for providing fault detection in an Advanced Process Control (APC) framework. A first interface receives operational state data of a processing tool related to the manufacture of a processing piece. The state data is sent from the first interface to a fault detection unit. A fault detection unit determines if a fault condition exists with the processing tool based upon the state data. A predetermined action is performed on the processing tool in response to the presence of a fault condition. In accordance with one embodiment, the predetermined action is to shutdown the processing tool so as to prevent further production of faulty wafers.

Abstract: A method for designing a circuit having a plurality of submodules includes providing a floor plan for the circuit. The floor plan defines boundaries for each of the submodules. A component list identifying internal circuit elements of the submodules and interconnections between the internal circuit elements is provided. A plurality of global abutment points are defined for the interconnections between internal circuit elements of different submodules. Each global abutment point specifies a locus of interconnection points along at least a portion of the boundary of a particular one of the submodules. A program storage device includes a floor plan database, a connectivity database, and program instructions. The floor plan database is adapted to store a floor plan of a circuit having a plurality of submodules. The floor plan defines boundaries for each of the submodules.

Abstract: A system for monitoring and/or controlling an etch process associated with a dual damascene process via scatterometry based processing is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the etch results achieved at respective portions of the wafer. The measuring system provides etching related data to a processor that determines the desirability of the etching of the respective portions of the wafer. The system also includes one or more etching devices, each such device corresponding to a portion of the wafer and providing for the etching thereof. The processor produces a real time feed forward information to control the etch process, in particular, terminating the etch process when desired end points have been encountered.

Abstract: The disclosure describes an exemplary method of improving the accuracy of model-based optical proximity correction (OPC). This method can include identifying best exposure dose and best focus conditions, measuring critical dimensions at the identified conditions, measuring critical dimensions at variations from the identified conditions, and obtaining critical dimension information by averaging measured critical dimensions.

Abstract: In a method of forming a metal gate of a semiconductor device, a substrate is provided, which includes a substrate body covered by a dielectric layer. A metal body having top and side surface is provided on the dielectric layer. A self-assembled monolayer is provided over the top and side surfaces of the metal body, and has an ordered region covering the top surface of the metal body and disordered regions covering the side surfaces of the metal body. The resulting structure is etched, the disordered regions of the self-assembled monolayer allowing etching of the side surfaces of the metal body while the ordered region of the self-assembled monolayer substantially blocks etching of the top surface of the metal body.

Abstract: A method and software macro are disclosed for generating a first pass yield report, which may be employed in the manufacture and testing of semiconductor products. The method comprises obtaining raw data from a workstream database, executing a software macro in a computer system, and generating a first pass yield report comprising final yield data calculated via the macro. The macro may comprise computer-executable instructions for formatting the raw data, sorting the formatted data, and calculating final yield data by package type.