Abstract: A valve assembly for controlling gas delivery from a higher pressure fluid source to a lower pressure processing tool. The valve assembly includes a valve poppet movingly engageable with a valve seating member and a fluid permeable insert positioned between the valve poppet and the valve seating member that is unexposed to flowing fluid when the valve poppet is in a closed position thereby preventing fluid flow through the valve assembly and providing a diffusional path for transfer of all flowing fluid when the valve poppet is in an open position. The permeable insert can be inserted into the sealable and engageable surface of either the valve seat member or the valve poppet.

Abstract: A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system.

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

Abstract: The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. Specifically, an infrared light beam is transmitted through a linear transmission path from an infrared light source through a sampling region containing material of interest into the thermopile detector. The linear transmission path reduces the risk of signal loss during transmission of the infrared light. The transmission path of the infrared light may comprise a highly smooth and reflective inner surface for minimizing such signal loss during transmission.

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 ?m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10?2 ?m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract: A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

Abstract: A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarazation characteristics throughout planarization applications. Shearing, hardness, wearing, water absorbtion and electrical characteristics of the CMP pad remain substantially constant during CMP applications.

Abstract: One or more PTFE films are heated to greater than 150 degrees centigrade (C) and for a time greater than 20 hours, then the PTFE films are cooled. The PTFE films may be heated to temperatures greater than 200° C. and less than 250° C. and most preferably heated to a temperature of about 228° C. The PTFE films may be kept at a temperature for greater than 50 hours or most preferably kept at a temperature for around 100 hours. The PTFE films may be heat processable PTFE fluoropolymer films and may have a number of heat affected zones. The heat affected zones may be created before or after heat treating. The heat affected zones are generally caused by welding two or more PTFE films together, usually under-pressure. An “optimal” temperature and “optimal” time period are determined at which heat processed polytetrafluoroethylene (PTFE) fluoropolymers should be heat treated.

Abstract: Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.

Abstract: Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

Abstract: Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).

Abstract: A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.

Abstract: A “bag-in-a-drum” container for storage and dispensing of fluids. The container is adapted to minimize volumetric space requirements in storage, transport and use of the container. The containers are usefully employed in a system of supplying liquid in containers to an end user market and refabricating containers subsequent to consumption of the liquid from the containers.

Abstract: A container for holding and dispensing liquid having a container wall comprising a rigid portion that dimensionally defines the container, a liner portion disposed within the container adjacent to the rigid portion, and an adhesive layer disposed between the rigid portion and the liner portion. The adhesive layer removably secures the liner portion to the rigid portion such that the liner portion is capable of being separated from the rigid portion and collapsed within the container, for dispensing the liquid.

Abstract: Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container.

Abstract: A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu2+, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.