Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract: A (MEMS)-based gas sensor assembly for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds that are subsequently removable for forming structure layers.

Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

Abstract: A gas supply system arranged for dispensing of gas at a predetermined flow rate. The system employs a gas dispensing flow circuitry arranged for dispensing gas at selectively variable gas flow conductance conditions, to maintain the flow rate of the dispensed gas at a predetermined, e.g., constant, value in the operation of the system. The gas dispensing flow circuitry may include an array of dispensed gas flow passages, each of a differing conductance, or alternatively a variable conductance gas flow passage equipped with a variable conductance assembly for modulating the gas flow conductance of the passage, in response to sensed pressure of the gas or other system parameter. The system permits the flow rate of a dispensed gas to be maintained at a consistent desired level, despite the progressive decline in source gas pressure as the gas source vessel is depleted in use.

Abstract: A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

Abstract: A chemical storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character, that contains or is otherwise associated with a colorimetric agent undergoing color change in exposure to fluid leaking from the vessel. Such shrink-wrap film may be applied to a portion of the vessel susceptible to leakage, or alternatively to the entire vessel, so that the film is colorimetric effective to indicate the occurrence of a leakage event by visually perceptible change of color.

Abstract: In an embodiment, an apparatus includes a disposable and flexible mixing tank having a sealed sleeve therein for arrangement of a mixing device. The volume of the mixing tank is defined by an inner wall of the mixing tank and an inner wall of the sleeve. The mixing tank may be used to mix, store, reconstitute and/or dispense materials therein.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: A gas detector for detecting a fluoro gas species in a gaseous environment containing same, e.g., an effluent from a semiconductor processing tool that employs corrosive fluoro species such as HF, NF3, etc. for etch cleaning. The gas detector preferably employs an elongated nickel-containing gas sensor element that can be vertically mounted on a fluoro-resistant support structure. Since the nickel-containing gas sensor element is sensitive to the fluoro species and is also electrically conductive, it can function both as a sensing component and a heat source when elevated temperature sensing is required. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of the elongated gas sensor element.

Abstract: A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, and nitrogen oxide. Useful precursors include Lewis base stabilized Ir(I)?-diketonates and Lewis base stabilized Ir(I) ?-ketoiminates. The iridium deposited on the substrate may then be etched for patterning an electrode, followed by depositing on the electrode a dielectric or ferroelectric material, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FRAMs, hybrid systems, smart cards and communication systems.

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

Abstract: A control system employed for dispensing liquid to a process via a flow passage from a container including an outer container and an inner container. The inner container is made of a flexible material and occupied by the liquid so that pressurized fluid in a compression space between the outer container and the inner container forces liquid out of the inner container to the manufacturing process via the flow passage. A pressure sensor is positioned to sense pressure in the flow passage. A controller that is responsive to the pressure sensor controls flow of the liquid in the flow passage by controlling the pressure of the pressurized fluid in the compression space.

Abstract: The present invention is a manufacturing system including a hazard zone and a non-hazard zone. The system includes a storage device, located in the hazard zone, for electrically storing information. The system further includes a communication device, also located in the hazard zone, for storing information to and reading information from the storage device. In the non-hazard zone, a controller is in electrical communication with the communication device. The controller controls the system based on information read from the storage device by the communication device. To limit electrical energy passing to the communication device, an intrinsic safety barrier located in the non-hazard zone is connected between the communication device and the controller device.

Abstract: A multicomponent fluid composition monitoring and compositional control system, in which a component analysis is effected by titration or other analytical procedure, for one or more components of interest, and a computational means then is employed to determine and responsively adjust the relative amount or proportion of the one or more components in the multicomponent fluid composition, to maintain a predetermined compositional character of the multicomponent fluid composition. The system is usefully employed in semiconductor manufacturing photoresist and post-etch residue removal, in which the cleaning medium is a semi-aqueous solvent composition, and water is the monitored and responsively adjusted component.

Abstract: Metalorganic precursors of the formula: (R1R2N)a?bMXb wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1?b?(a?1); R1 and R2 can be the same as or different from one another, and are each independently selected from the group of H, C1–C4 alkyl, C3–C6 cycloalkyl, and R03Si, where each R0 can be the same or different and each R0 is independently selected from H and C1–C4 alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4 on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Abstract: The present invention relates to a system and method for controlling electrical heating of an element to maintain a constant electrical resistance, by adjusting electrical power supplied to such element according to an adaptive feedback control algorithm, in which all the parameters are (1) arbitrarily selected; (2) pre-determined by the physical properties of the controlled element; or (3) measured in real time. Unlike the conventional proportion-integral-derivative (PID) control mechanism, the system and method of the present invention do not require re-tuning of proportionality constants when used in connection with a different controlled element or under different operating conditions, and are therefore adaptive to changes in the controlled element and the operating conditions.

Abstract: An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising ?5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative of hexafluoroacetone; and measuring the concentration of the water derivative of hexafluoroacetone by gas chromatography.

Abstract: A system and method of reducing particle generation in packaging containers used to transport ultra pure liquids. Particle generation in the containers is reduced by reducing the air-liquid interface present during filling, transport, and dispensing of the liquid.