Abstract: A phase-locked loop (PLL) circuit system includes first, second, and third PLL circuits, first, second, and third multiplexer circuits coupled to the first, second, and third PLL circuits, and a majority voter circuit coupled to the first, second, and third PLL circuits, wherein the PLL circuit system provides a glitch-free output clock signal by selecting a locked PLL circuit. Each PLL circuit includes a first input for receiving a reference clock signal; a second input for receiving a feedback clock signal; a first output for providing an output clock signal; a second output for providing a lock signal; and a return path coupled between the first output and the second input. The return path can be a direct connection or a logic circuit. Each multiplexer circuit includes three lock inputs, a first clock input, a second clock input, a defeat input, and a clock output.

Abstract: A clock generating circuit includes oscillators each having a delay rise vote input, a delay fall vote input, a delay rise output, a delay fall output, and a clock output; a vote rise circuit having inputs coupled individually to the delay rise outputs of the oscillators, and an output coupled in common to the delay rise vote inputs of the oscillators; a vote fall circuit having inputs coupled individually to the delay fall outputs of the oscillators, and an output coupled in common to the delay fall vote inputs of the oscillators; and a vote clock circuit having inputs coupled individually to the clock outputs of the oscillators, and an output for providing a synchronized clock signal.

Abstract: An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.

Abstract: A semiconductor structure includes a through-semiconductor via having an insulating lining isolating a conductive center region of the through-semiconductor via from the surrounding semiconductor, and wherein the cross-sectional profile of the through-semiconductor via has a varying taper angle such that the diameter of the through-semiconductor via is at its narrowest at a location between two essentially parallel surfaces of the semiconductor structure.

Abstract: A sample and hold amplifier includes an input node for receiving an input current signal, a non-linear sampling capacitor circuit having an input coupled to the input node, an operational amplifier having a negative input coupled to an output of the non-linear sampling capacitor circuit, a positive input coupled to ground, and an output for providing a sample and hold voltage signal, and a linear capacitor coupled between the negative input and the output of the operational amplifier. The non-linear sampling capacitor includes a non-linear capacitor coupled between an intermediate node and ground, a first switch coupled between the input and the intermediate node configured to switch according to a first phase signal, and a second switch coupled between the output and the intermediate node configured to switch according to a second phase signal.

Abstract: A sample and hold amplifier includes an input node for receiving an input current signal, a non-linear sampling capacitor circuit having an input coupled to the input node, an operational amplifier having a negative input coupled to an output of the non-linear sampling capacitor circuit, a positive input coupled to ground, and an output for providing a sample and hold voltage signal, and a linear capacitor coupled between the negative input and the output of the operational amplifier. The non-linear sampling capacitor includes a non-linear capacitor coupled between an intermediate node and ground, a first switch coupled between the input and the intermediate node configured to switch according to a first phase signal, and a second switch coupled between the output and the intermediate node configured to switch according to a second phase signal.

Abstract: An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.

Abstract: A Data Throttling method duplicates the full-speed transmission of data so that it appears to be transmitting at a 10 Mhz rate. Additional storage elements and multiplexers are added along the data path but this completely eliminates undesirable complexity in the clock tree. In a two-bit application, data is received and transmitted two bits at a time, and yet the output 10 Mhz data rate is maintained. For an even ratio between the system clock rate and the 10 Mhz clock signal rate, bit0 is transmitted for half the time and bit1 is transmitted for the other half of the time. But if the full-speed clock rate is an odd multiple of 10 Mhz, then there will be a “split cycle” including one bit0 and one bit1.

Abstract: A preamplifier includes a differential pair of transistors receiving a bias current having a differential input and a differential output, a first resistor coupled to a first differential output node, a first transistor having a current path coupled between the first resistor and a power supply, a second resistor coupled to the first differential output node, a second transistor having a current path coupled between the second resistor and the power supply, a third resistor coupled to a second differential output node, a third transistor having a current path coupled between the third resistor and the power supply, a fourth resistor coupled to the second differential output node, and a fourth transistor having a current path coupled between the fourth resistor and the power supply, wherein a source of the second and third transistors are coupled together.

Abstract: A circuit and method of directly measuring the Single Event Transient (SET) performance of a combinatorial circuit includes a measurement chain. The measurement chain includes a plurality of cells, each in turn including a pair of SR latches, a dual-input inverter, and a target. During measurement and testing, the targets are irradiated, and a pulse signal caused by an SET event is allowed to propagate through the measurement chain only if the pair of SR latches are active at the same time. The pulse signal is latched by the measurement chain, thus allowing the presence of an SET event to be detected.

Abstract: A preamplifier includes a differential pair of transistors receiving a bias current having a differential input and a differential output, a first resistor coupled to a first differential output node, a first transistor having a current path coupled between the first resistor and a power supply, a second resistor coupled to the first differential output node, a second transistor having a current path coupled between the second resistor and the power supply, a third resistor coupled to a second differential output node, a third transistor having a current path coupled between the third resistor and the power supply, a fourth resistor coupled to the second differential output node, and a fourth transistor having a current path coupled between the fourth resistor and the power supply, wherein a source of the second and third transistors are coupled together.

Abstract: A method of monitoring supply voltage includes providing a single reference voltage, providing a single ratioed supply voltage, comparing the reference voltage to the ratioed supply voltage to provide an output signal, wherein the output signal comprises a first logic value in first and second operating conditions, and a second logic value in a third operating condition, wherein the first, second, and third operating conditions are determined by two crossing points of the reference voltage and ratioed supply voltage characteristics. The first and second operating conditions can represent undervoltage and overvoltage conditions, and the third operating condition can represent a normal operating condition. The reference voltage can be provided by a bandgap reference circuit.

Abstract: A data memory is organized as a logical matrix having multiple virtual data words. Along with the physical representation of the data as being associated with physical memory cells, other virtual data words and their virtual check bits are formed that intersect (logically) with the real data word in a multi-dimensional array. Each of these virtual words can possess errors that can be quickly corrected using independent EDAC methodology. The validity of the virtual word can be used to verify the validity of a single bit in the real word thus correcting multiple bit errors.

Abstract: A PLL fail-over circuit technique and method to mitigate the effects of single-event transients comprises providing a pair of substantially identical phase-locked loops and producing a respective delayed clock signal from each. The outputs of the phase-locked loops are monitored for errors comprising high frequency transients or differences in clock signal outputs from a reference frequency. A clock out signal is output representative of the first delayed clock signal if an error is detected in the second phase-locked loop and the second delayed clock signal is output if an error is detected in the first phase-locked loop.

Abstract: A photodiode structure having an illuminated front-side surface and a back-side surface includes a front-side doped layer having a first conductivity type, a back-side doped layer having the first conductivity type, a front-side active cell region made sensitive to light by the action of at least one plug region formed in the front-side doped layer having a second conductivity type, and a front-side inactive cell region substantially insensitive to light, wherein the first and second conductivity types are opposite conductivity types.

Abstract: A PLL fail-over circuit technique and method to mitigate the effects of single-event transients comprises providing a pair of substantially identical phase-locked loops and producing a respective delayed clock signal from each. The outputs of the phase-locked loops are monitored for errors comprising high frequency transients or differences in clock signal outputs from a reference frequency. A clock out signal is output representative of the first delayed clock signal if an error is detected in the second phase-locked loop and the second delayed clock signal is output if an error is detected in the first phase-locked loop.

Abstract: A method of monitoring supply voltage includes providing a single reference voltage, providing a single ratioed supply voltage, comparing the reference voltage to the ratioed supply voltage to provide an output signal, wherein the output signal comprises a first logic value in first and second operating conditions, and a second logic value in a third operating condition, wherein the first, second, and third operating conditions are determined by two crossing points of the reference voltage and ratioed supply voltage characteristics. The first and second operating conditions can represent undervoltage and overvoltage conditions, and the third operating condition can represent a normal operating condition. The reference voltage can be provided by a bandgap reference circuit.

Abstract: A data memory is organized as a logical matrix having multiple virtual data words. Along with the physical representation of the data as being associated with physical memory cells, other virtual data words and their virtual check bits are formed that intersect (logically) with the real data word in a multi-dimensional array. Each of these virtual words can possess errors that can be quickly corrected using independent EDAC methodology. The validity of the virtual word can be used to verify the validity of a single bit in the real word thus correcting multiple bit errors.

Abstract: An amplitude-stabilized third-order predistortion circuit includes a main cell having a differential input for receiving a differential input voltage, a differential output for providing a differential output voltage, and a load control input for receiving a load control voltage; a plurality of replica cells having a differential input for receiving a differential level of peak input voltage, a differential peak output voltage, and a load control input; and a plurality of control circuits coupled to the differential outputs of the replica cells, and driving the load control inputs of the replica cells and the weighted inputs of a signal combiner driving the load control input of the main cell. The main cell and the replica cells each include a cross-coupled differential cell having a variable load.

Abstract: A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.