Abstract: Current sensor packages are described including a leadframe configured to carry a current to be sensed and a current sensor that is electrically isolated from the leadframe. The current sensor is disposed adjacent to a first portion of the leadframe that includes a plurality of notches. An encapsulating material is configured to encapsulate the current sensor and at least a part of the first portion of the leadframe that is adjacent to the current sensor and includes the plurality of notches. The current sensor includes a substrate, a first magnetic field sensing element that is formed on the substrate, and a second magnetic field sensing element that is formed on the substrate. The first magnetic field sensing element and the second magnetic field sensing element are disposed on opposite sides of a central axis of the first portion of the leadframe.

Abstract: Systems, methods, and apparatus for differential magnetic field torque sensors that include first and second magnetic targets for coupling to one or more rotatable shafts. The magnetic targets can include multipole ring magnets having a plurality of alternating magnetic domains. First and second differential magnetic field angular position sensors positioned proximate to the magnetic targets produce angular position of the targets and a processing unit is operative to receive an angular position from each of the first and second differential magnetic field angular position sensors and determine a difference between the angular positions. The difference corresponds to an angle between the targets, and the processing unit is operative to calculate, based on the angle, a torque applied to the one or more rotatable shafts.

Abstract: Described herein is a method and apparatus for an optical system configured to output redundant outputs, where the optical system includes at least one optical device configured to receive an optical signal; at least one optical transducer, wherein each at least one optical transducer is configured to receive the optical signal from the at least one optical device and convert the optical signal to an electrical signal; and at least one electronic device configured to receive each electrical signal and output the redundant outputs.

Abstract: In one aspect, a flash memory cell includes a well having a first-type dopant, a source having a second-type dopant and formed within the well, a drain having the second-type dopant and formed within the well, a floating gate above the well, a control gate above the floating gate, an oxide compound disposed between the floating gate and the control gate, and a tunnel oxide disposed between the floating gate and the well. The flash memory cell is configured, in one of a program mode or an erase mode, to move an electron from the source to the floating gate. The flash memory cell is configured, in the other one of the program or the erase mode, to move an electron is from the floating gate to the drain.

Abstract: A system, comprising: a printed circuit board; a first conductor having a first central longitudinal axis, the first conductor having a first through-hole that is formed therein; a second conductor having a second central longitudinal axis; and a first current sensor that is mounted on the printed circuit board, the first current sensor being disposed at least partially inside the first through-hole, the first current sensor including a first pair of magnetic field sensing elements, the magnetic field sensing elements in the first pair being aligned with a first alignment axis that is arranged at a first angle relative to the second central longitudinal axis, the first angle being less than 75 degrees.

Abstract: Methods and apparatus for a magnetoresistive (MR) sensor including a seed layer having a CoFe layer for canceling hysteresis in the MR sensor. The MR stackup can include a free layer and a reference layer. The seed layer having CoFe provides a desired texturing of the stackup to cancel hysteresis effects.

Abstract: A sensor includes a first sensing element configured to sense a parameter and generate a first sensing element output signal indicative of the parameter, a first front end element configured to receive the first sensing element output signal and to generate a first front end signal, a second sensing element configured to sense the parameter and generate a second sensing element output signal indicative of the parameter, a second front end element configured to receive the second sensing element output signal and to generate a second front end signal, a difference block configured to receive the first and second front end signals and generate a difference signal indicative of a difference between the first and second front end signals, an absolute value block configured to receive the difference signal and generate an absolute difference signal indicative of an absolute value of the difference signal, and an offset comparator configured to compare the absolute difference signal to an offset threshold to detect

Abstract: Methods and apparatus for a signal isolator having reduced parasitics. An example embodiment, a signal isolator and include a first metal region electrically connected to a first die portion, a second die portion isolated from the first die portion, and a second metal region electrically connected to the second die portion. A third metal region can be electrically isolated from the first and second metal regions and a third die portion can be electrically isolated from the first, second and third metal regions. In embodiments, the first metal region, the second metal region, and the third metal region provide a first isolated signal path from the first die portion to the second die portion.

Abstract: In one aspect, an angle sensor includes magnetic-field sensing elements that include a first pair, a second pair, a third pair and a fourth pair of magnetic-field sensing elements; and processing circuitry configured to determine an angle of a rotating ring magnetic having a plurality of North-South pole pairs each having a unique period length. The processing circuitry includes a first bridge formed from the first and second pairs of magnetic-field sensing elements and a second bridge formed from the third and fourth pairs of magnetic-field sensing elements. The angle includes a value from 0° to 360°. The first, second, third and fourth pairs of magnetic-field sensing elements are each disposed on a first axis. The first, second, third and fourth pairs of magnetic-field sensing elements each have a sensitivity in a first direction along the first axis. The angle sensor is formed on a single die.

Abstract: Systems, methods, and circuits provide delay-locked loop (DLL) timing error mitigation. A DLL false-lock detection system can include DLL circuitry configured to receive a reference clock signal having a time period. The system can include shift register circuitry and latched comparison circuitry which can determine a time period of a locked condition of the DLL delay line with respect to the reference clock signal time period. The system can determine whether the system is correctly locked to the base time period or incorrectly locked to a multiple of the base time period. A further system can operate to cause a phase detector circuitry in a DLL to ignore the first edge of a reference clock signal presented to the phase detector circuitry and thereby avoid stuck-lock conditions.

Abstract: According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.

Abstract: A converter to convert an input voltage into a regulated output current for supplying a load includes a reverse current protection diode having an anode coupled to the input voltage and a cathode, an energy storage element coupled to the cathode of the reverse current protection diode, a high side transistor coupled to the energy storage element and responsive to a high side control signal, and a low side transistor coupled to the energy storage element and responsive to a low side control signal. A controller is configured to generate the high side control signal and the low side control signal such that the low side transistor is enabled and the high side transistor is disabled during a pre-regulation interval.

Abstract: Lidar transmission optics and systems project more laser pulse energy per pixel instantaneous field-of-view (IFOV) to a portion of a sensor field of view (FOV), e.g., a portion that would be expected to have both close and distant objects of interest, and proportionally less pulse energy per pixel IFOV to other portions of the sensor FOV, e.g., those that would be expected to have or see only close objects of interest. Optics such as diffractive optical elements (DOEs), gradient-index (GRIN) lenses, and/or compound lens systems can be used for producing desired irradiance distributions having multiple parts or regions. The optics and systems improve range performance by providing for more efficient use of the total available laser pulse energy than transmit optics that project uniform pulse energy per pixel IFOV across the sensor FOV.

Abstract: In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.

Abstract: An angle sensor comprising: a plurality of magnetic field sensing elements configured to detect a magnetic field and generate a respective plurality of analog magnetic field signals; a plurality of analog frontend circuits each analog frontend circuit associated with a respective magnetic field sensing element; and a digital feedback circuit configured to generate digital magnetic field signals from the plurality of analog magnetic field signals and generate digital error correction values, wherein the plurality of analog frontend circuits are configured to obtain the digital error correction values from the digital feedback circuit, generate analog correction values from the digital error correction values, and apply the analog correction values to the plurality of analog magnetic field signals to generate a plurality of corrected analog magnetic field signals.

Abstract: A low dropout (LDO) voltage regulator includes a first LDO stage that receives a first supply voltage and is active during a first time interval and a second LDO stage that receives a second supply voltage and is active during a second time interval. An operational amplifier receives a feedback voltage based on the LDO output voltage and provides an amplified feedback signal to the first and second LDO stages. A compensation capacitor is selectively coupled between the operational amplifier and either the first or the second LDO stage. A current limit circuit includes a sense FET coupled to the LDO pass FET, a drain voltage replication circuit coupled between the pass FET and sense FET to provide a sense current is indicative of load current when the pass FET is in a linear region, and a current comparator to compare the sense current to a predetermined current level.

Abstract: A current sensor circuit package includes a primary conductor having an input portion into which a current flows, an output portion from which the current flows, and an exposed portion, wherein the input and output portions have a reduced area edge. A secondary lead has an elongated portion that is offset with respect to the exposed portion of the secondary lead. A semiconductor die is disposed adjacent to the primary conductor on an insulator portion and at least one magnetic field sensing element is supported by the semiconductor die.

Abstract: Apparatus includes an ADC configured to convert an analog signal to a digital signal, a comparator having a first input responsive to the analog signal, a second input responsive to the digital signal, and an output at which a comparison signal is provided, and an output checker configured to process the comparison signal to generate a fault signal indicative of whether a fault has occurred in the ADC. The comparator can be an analog comparator in which case the digital signal is converted to an analog signal for the comparison or a digital comparator in which case an additional ADC is provided to convert the analog signal into a digital signal for the comparison. Embodiments include more than one ADC in which case summation elements are provided to sum the analog signals and the digital signals for the comparison.

Abstract: Magnetic field closed loop sensors including offset reduction circuitry to reduce undesired baseband components attributable to offset associated with magnetoresistance elements are described. A superimposed signal including a main signal portion indicative of a parameter of a target and an offset reduced signal portion is coupled to feedback circuitry. The feedback circuitry generates a feedback signal to drive a feedback coil. Main processing circuitry is operative to extract the main signal portion from the superimposed signal and produce a sensor output signal based on the main signal portion. Example offset reduction circuitry can take the form of AC coupling circuitry or a ripple reduction loop.

Abstract: In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.