Abstract: PASS transistors are used to reduce the layout complexity of logic circuits by using PASS transistors connected to pass a first and second input function to an output node in response to selected CONTROL signals, thereby to generate a selected output function on the output node. The PASS transistor comprises a transistor capable of passing an input function in response to a CONTROL signal applied to the transistor thereby to generate an output function related to the input function. In general, the input function comprises less than all of a set of input variables and the CONTROL function comprises one or more of the remainder of the set of input variables.

Abstract: A novel switched capacitor gain stage uses a unique circuit design and clocking technique that reduces the component mismatch offset voltage and the clock-induced feedthrough offset voltage produced by the circuit. The total capacitance ratio between the input capacitors and the feedback capacitor necessary to achieve a desired total gain is also minimized.

Abstract: A carrier detection circuit includes a rectification stage, an integrator, a comparator, and a digital counter. By utilizing a digital counter, long time constants are provided without the use of external components. If desired, a mark detect circuit is used when a mark must be present to signify the presence of carrier. Hysteresis is provided by the comparator to insure that slight fluctuations in the carrier level do not affect the comparison.

Abstract: An operational amplifier has one noninverting input lead (116), and two inverting input leads (117a, 117b). One of these inverting input leads (117a) is utilized to compensate for the effects of the inherent offset voltage (V.sub.off) of the operational amplifier, and the second inverting input lead (117b) receives an input signal to be amplified or compared.

Abstract: PASS transistors are used to reduce the layout complexity of logic circuits by using PASS transistors connected to pass a first and second input function to an output node in response to selected CONTROL signals, thereby to generate a selected output function on the output node. The PASS transistor comprises a transistor capable of passing an input function in response to a CONTROL signal applied to the transistor thereby to generate an output function related to the input function. In general, the input function comprises less than all of a set of input variables and the CONTROL function comprises one or more of the remainder of the set of input variables.

Abstract: A unique CVSD CODEC is provided utilizing switched capacitor technology. This CVSD CODEC includes a syllabic filter which provides one of a large number of possible step sizes, thereby allowing the CVSD CODEC to accurately track and convert a wide range of input voltages. The CVSD CODEC includes coincidence logic, which determines how accurately the input voltage is being tracked, and a syllabic filter which provides an appropriate step size based upon the output signals of the coincidence logic. Large step sizes are provided for converting input voltages having large magnitudes, and small step sizes are used to convert input voltages having small magnitudes, thereby providing the very accurate resolution of input voltages over the wide range of magnitudes, while minimizing the bit rate required.

Abstract: A differential operational amplifier is provided with a feedback loop which continuously adjusts the common mode voltage level of the amplifier so that it lies in the center of the dynamic range of the amplifier. The feedback loop measures the instantaneous common mode voltage level and compares it with a reference voltage which is set to reflect the desired common mode voltage. An error signal is generated and fed back into the amplifier to adjust the instantaneous common mode voltage level towards the reference level. Frequency compensation is also provided to overcome the phase shift introduced by the use of RC networks.

Abstract: In one embodiment of this invention, a uniquely designed switched capacitor multiplier/adder (129) is provided which also functions as a digital-to-analog converter in a single subcircuit. The multiplier/adder, in a single operation, multiplies an analog voltage by a binary coefficient, and sums this product with a second analog voltage. The use of this unique subcircuit significantly reduces the space requirements for the construction of, for example, a speech synthesis circuit utilizing linear predictive coding over prior art circuits. This invention provides a novel structure and method which minimizes error components in the synthesized speech signal due to voltage errors inherent in the use of analog sample and hold circuits which are used to store the forward and backward prediction errors utilized in the linear predictive coding technique. Using the method of this invention, the inherent error components are alternatively inverted and not inverted upon each clock cycle of the multiplier/adder.

Abstract: A method for fabricating an integrated circuit semiconductor device comprised of an array of MOSFET elements having self-aligned or self-registered connections with conductive interconnect lines. The method involves the formation on a substrate of a thick oxide insulation layer surrounding active area openings. A gate electrode within each opening is utilized to provide self-registered source and drain regions. In two embodiments, the gate is covered on all sides and on its top surface with a protective layer of nitride or thick oxide. In one of the embodiments, after the formation of the source-drain regions a relatively thin protective layer of etch stopper is applied to the entire chip prior to the application of an upper insulative layer.

Abstract: A late mask programming process is provided for factory programmed ROMs or logic circuitry. MOS transistors functioning as ROM cells or in logic circuitry are fabricated by a standard MOS Process. Then, a thin stop layer of silicon nitride is provided over the transistors followed by a layer of silicon dioxide. Programming is accomplished by applying a program mask and etching through the layers overlying the gate regions of selected transistors down to the silicon nitride stop layer. The silicon nitride stop layer prevents overetching and shorting of the gates. Then, ions are implanted underneath the gates of the selected MOS transistors to alter their threshold so, for example, as ROM cells they signify a different state than those cells whose transistor gates are not implanted with ions. The silicon nitride layer serves to stop the etch solution but permits the ions to pass through, penetrate the substrate and raise the thresholds of the selected transistors.

Abstract: A CMOS push-pull output buffer (171) is constructed utilizing a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The voltages applied to the gates of the N channel transistors and P channel transistors are selected to divide the high voltage (+V) substantially equally across the P channel transistors, when the P channel transistors are turned off, and substantially evenly divide the high voltage across the N channel transistors, when the N channel transistors are turned off.In another embodiment of this invention, selected ones of the N channel and P channel transistors are formed in order to have a high drain to bulk breakdown voltage.In another embodiment of this invention, a plurality of N channel and a plurality of P channel transistors are connected in series and driven by a single ended control voltage (C.sub.

Abstract: A programmable transversal filter utilizes a plurality of programmable multiplying means. The result of each multiplication is summed by a summing circuit, thus providing an output signal. The delay network comprises a plurality of signal sample and hold circuits which are selectively connected to the input bus in sequence, in order that one sample and hold circuit may store an analog signal sampled during the present time instant, with other sample and hold circuits storing a plurality of analog signals each of which has been sampled during a corresponding one of a plurality of preceding sample periods. The filter also includes a plurality of reference sample and hold circuits which store error voltages equal to the error voltage component of the voltages provided by the signal sample and hold circuits.A first analog cross-point switch is utilized wherein each of said plurality of time delayed analog signals may be selectively applied to a selected multiplying means.

Abstract: A programmable transversal filter (10) utilizes a plurality of programmable multiplying means (M.sub.1 -M.sub.4). The result of each multiplication is summed by a summing circuit (7), thus providing an output signal (y(t)). The delay network of this invention comprises a plurality of sample and hold circuits (S.sub.1 -S.sub.4) which are selectively connected to the input bus in sequence, in order that one sample and hold circuit may store an analog signal sampled during the present time instant, with other sample and hold circuits storing a plurality of analog signals each of which has been sampled during a corresponding one of a plurality of preceding sample periods.An analog cross-point switch (51) is utilized wherein each of said plurality of time delayed analog signals may be selectively applied to a selected multiplying means.

Abstract: A switched capacitor filter is designed utilizing two switched capacitor charge pumps connected in series. These two charge pumps operate with different clock frequencies thereby allowing charging of a storage capacitor at a higher frequency, thereby decreasing incremental voltage steps during the charging of the storage capacitor, resulting in the generation of a smoother exponential voltage rise.

Abstract: A method for fabricating an integrated circuit semiconductor device comprised of an array of MOSFET elements having self-aligned or self-registered connections with conductive interconnect lines. The method involves the formation on a substrate of a thick oxide insulation layer (30) surrounding openings (99) therein for the MOSFET elements. A gate electrode (38) within each opening is utilized to provide self-registered source (42) and drain (44) regions and is covered on all sides and on its top surface with a gate dielectric layer (46). After the formation of the source-drain regions a relatively thin dielectric protective layer (38) is applied to the entire chip prior to the application of an upper insulative layer (50).

Abstract: An operational amplifier has one noninverting input lead (116), and two inverting input leads (117a, 117b). One of these inverting input leads (117a) is utilized to compensate for the effects of the inherent offset voltage (V.sub.off) of the operational amplifier, and the second inverting input lead (117b) receives an input signal to be amplified or compared.

Abstract: Capacitors or dual layer metalization interconnects are formed in an integrated circuit utilizing two layers of polycrystalline silicon (22, 24) separated by a thin insulation region (23). The insulation region formed between the two polycrystalline silicon regions has substantially fewer defects than the insulation regions used in prior art techniques due to the use of a unique process wherein the polycrystalline silicon layer (24) overlying the insulation layer (23) protects the insulation layer from attack during subsequent processing. An improved dielectric strength is provided by forming the insulation region (23) utilizing composite layers of silicon oxide (23a, 23c) and silicon nitride (23b).

Abstract: A unique fabrication method allows the formation of regions of opposite conductivity types in a semiconductor substrate 100 utilizing a single masking step. A first mask is formed on the surface of the semiconductor substrate and patterned to define the regions (110) which are to be doped to a first conductivity type. Subsequent to the doping of these first regions, a protective layer (111) is formed over these first regions. The mask is then removed, thus exposing the regions (112) which are to be doped to the second conductivity type opposite to said first conductivity type. These exposed regions are then doped to said opposite conductivity type, with the first regions which have been doped to said first conductivity type protected by said protective layer.

Abstract: An electronic comparator circuit (10) adapted for implementation as an integrated circuit semiconductor device provides high resolution and high speed performance. The circuit comprises a first differential amplifier (12) with clamping diodes (50, 52) that allow a fast response; a source-follower stage (14) connected to the first differential amplifier for buffering its output to enable it to be broadbanded; a second differential amplifier (16) driven by the source-follower stage for handling large signal swings while providing additional gain, a level shift stage (18) for driving the output stage in a class A-B mode, and a cascode output stage (20) which provides increased circuit gain and an output signal which ranges from the positive supply voltage (V.sub.DD) to the negative supply voltage (V.sub.SS).

Abstract: An AGC circuit (12) contains a programmable gain stage comprising an operational amplifier (150) and one or more capacitor arrays (101, 121) for controlling the closed loop gain of the operational amplifier. The output signal (V.sub.O) of this operational amplifier is rectified, and the rectified signal is alternately integrated with a reference voltage (V.sub.ref) of opposite polarity to the rectified AGC signal. The polarity of the integrated voltages operates a counter stage (200). The output bits (0.sub.2 -0.sub.N) of the counter are used to control switches (134-2 through 134-N, 135-2 through 135-N, 110-2 through 110-N, 111-2 through 111-N) in the one or more capacitor arrays which control the closed loop gain of the operational amplifier of the AGC circuit of this invention.