Abstract: In one example, a semiconductor device comprises a substrate comprising a conductive structure, a first electronic component over the substrate, an encapsulant over the substrate and contacting a lateral side of the first electronic component, a shield over the encapsulant and contacting a lateral side of the encapsulant and a portion of a lateral side of the substrate, and a communication structure coupled with the substrate. The substrate comprises a vertical groove side and a horizontal groove side defining a groove in the substrate, wherein a portion of the groove is uncovered by the shield. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate including a substrate inner side, a substrate outer side opposite to the substrate inner side, substrate lateral sides connecting the substrate inner side to the substrate outer side, a dielectric structure, a conductive structure, and a substrate internal stiffener at the substrate inner side. An electronic component is coupled to the conductive structure and includes a lower side proximate to the substrate inner side, an upper side opposite to the lower side, and a lateral side connecting the lower side to the upper side. An underfill is between the lower side of the electronic component and the substrate inner side and covering the substrate internal stiffener. An encapsulant covers a portion of the substrate inner side, a portion of the underfill; and a portion of the first electronic component. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

Abstract: A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

Abstract: In one example, an electronic device includes a substrate, an electronic component disposed over the substrate, and an encapsulant disposed over the substrate and the electronic component. A molded heat spreader can be disposed over the encapsulant and can comprise a heat spreader and a mold compound disposed around a lateral side of the heat spreader. A lateral side of the mold compound is coplanar with a lateral side of the encapsulant. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate including a substrate first side, a substrate second side, and a conductive structure. An electronic component includes a component first side coupled to the conductive structure at the substrate first side, a component second side, and a component lateral side connecting the component first side to the component second side. A lid structure includes a first lid having a first lid side wall coupled to the substrate and a first lid top coupled to the first lid side wall and an opening over the component second side. The lid structure includes second lid with a second lid top coupled to the first lid top and a lid channel coupled to the opening. A thermal interface material is within the opening and covers at least a portion of the component second side. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Abstract: In one example, an electronic device can comprise a substrate, a substrate sidewall over a side of the substrate. An electronic device can be disposed over the side of substrate and adjacent the substrate sidewall. An internal interconnect can be disposed between the electronic device and the substrate sidewall. An encapsulant can cover the internal interconnect between the electronic device and the substrate sidewall. A lid attach material can be disposed over the substrate sidewall and the encapsulant. A lid can be coupled to the encapsulant and the substrate sidewall by the lid attach material. A cavity can be defined between a bottom side of the lid and a top side of the electronic device. Other examples and related methods are also disclosed herein.

Abstract: In one example, a redistribution structure is provided and comprises a substrate interconnect. A portion of a first capping layer is removed to expose a side of the substrate interconnect. The side of the substrate interconnect is recessed by a dishing height from a side of the first capping layer. An electronic component is provided over the first capping layer. The electronic component comprises a second capping layer and a component interconnect. The second capping layer is bonded with the first capping layer. Heat is applied to bond the substrate interconnect to the component interconnect. Other examples and related devices and methods are also disclosed herein.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: In one example, a semiconductor device comprises a first dielectric comprising a first side and a second side, a first conductive tier in the first dielectric and comprising a first conductive path integral with a first conductive via, wherein the first conductive path and the first conductive via extend between the first side and the second side of the first dielectric, a second dielectric comprising a first side and a second side, and a first barrier covering the first conductive tier and covering the first dielectric, wherein the first barrier is between the second side of the first dielectric and the first side of the second dielectric. The first conductive tier comprises a trench barrier coupled with the first dielectric structure. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device comprises a first and second substrates comprising first and second dielectric structures and first and second conductive structures, a first electronic component over the first substrate, the second substrate being over the first substrate and the first electronic component, a first interconnect structure between the first substrate and the second substrate and coupled with the first conductive structure and the second conductive structure, a first encapsulant between the first substrate and the second substrate and covering a lateral side of the first interconnect structure and a lateral side of the first electronic component, a second interconnect structure over the second substrate and coupled with the second conductive structure, a second encapsulant over the second substrate and covering a lateral side of the second interconnect structure, and a photonic integrated circuit over the second encapsulant and coupled with the second interconnect structure.

Abstract: In one example, a semiconductor device includes a substrate that comprises a substrate conductor material. An electronic component has a first component terminal that comprises a first component terminal conductor material and a second component terminal that comprises a second component terminal conductor material. An interconnect comprises an interconnect conductor material, a component end, and a substrate end. The second component terminal is attached to the substrate with a first intermetallic bond, the component end of the interconnect is attached to the first component terminal with a second intermetallic bond, and the substrate end of the interconnect is attached to the substrate with a third intermetallic bond. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a base assembly comprising a first substrate, a first device on a top surface of the first substrate, and a first encapsulant on the top surface of the first substrate and bounding a side surface of the first device. The semiconductor device further comprises a conductive pillar on the first substrate and in the first molding compound, wherein the conductive pillar comprises a non-conductive pillar core and a conductive pillar shell on the pillar core.

Abstract: In one example, an electronic device includes a substrate, which has a dielectric structure includes a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, and a conductive structure comprising a protruded via that extends from the dielectric structure bottom side. An electronic component is coupled to the conductive structure at the dielectric structure top side, and a terminal is coupled to the protruded via such that the protruded via extends into the terminal. Other examples and related methods are also disclosed herein.

Abstract: A wafer level fan out package includes a semiconductor die having a first surface, a second surface, and a third surface. A stiffener is disposed on the third surface of the semiconductor die. A conductive via passes through the stiffener. First and second electrically conductive patterns electrically connected to the conductive via are disposed on the first and second surfaces of the semiconductor die and stiffener. Solder balls are electrically connected to the first or second electrically conductive patterns.

Abstract: In one example, a semiconductor device includes a first substrate with a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a first substrate conductive structure. An electronic component is coupled to the first substrate top side and coupled to the first substrate conductive structure. A support includes a support wall having a first ledge coupled to the first substrate top side, a first riser coupled to the first substrate lateral side, and a second ledge extending from the first riser away from the first substrate lateral side. Other examples and related methods are also disclosed herein.

Abstract: A method for providing an electronic package structure includes providing a substrate having a die pad having a die pad top surface and an opposing die pad bottom surface, leads laterally spaced apart from the die pad, and a substrate encapsulant interposed between the die pad and the leads and includes a substrate top surface and an opposing substrate bottom surface. The substrate encapsulant is provided such that the die pad and the leads protrude outward from the substrate bottom surface. The method includes providing an electronic device having opposing major surfaces and a pair of opposing outer edges. The method includes connecting the electronic device to the substrate such that one major surface of the electronic device is spaced apart from the die pad top surface and upper surfaces of the leads, and the outer edges overlap an opposing pair of the leads.