Abstract: Compact packages including microelectromechanical system (MEMS) devices and multiple application specific integrated circuits (ASICs) are described. These packages are sufficiently small to be applicable to contexts in which space requirements are particularly strict, such as in consumer electronics. These packages involve vertical die stacks. A first ASIC may be positioned on one side of the die stack and another ASIC may be positioned on the other side of the die stack. A die including a MEMS device (e.g., an accelerometer, gyroscope, switch, resonator, optical device) is positioned between the ASICs. Optionally, an interposer serving as cap substrate for the MEMS device is also positioned between the ASICs. In one example, a package of the types described herein has an extension of 2 mm×2 mm in the planar axes and less than 500-800 ?m in height.

Abstract: Apparatus and methods for logarithmic current to voltage conversion are disclosed herein. In certain embodiments, a logarithmic current to voltage converter includes an input terminal that receives an input current, an output terminal that provides a logarithmic output voltage, a first field-effect transistor (FET) having a gate connected to the input terminal, a first bipolar transistor having a collector connected to the input terminal and an emitter connected to the output terminal, and a stacked transistor connected to the output terminal and to the first FET to form a feedback loop. For example, the stacked transistor can correspond to a second bipolar transistor having a collector connected to the output terminal and a base connected to the source of the first FET, or to a second FET having a drain connected to the output terminal and a gate connected to the source of the first FET.

Abstract: One or more electromagnetic radiation sources, such as a light emitting diode, may emit electromagnetic waves into a volume of space. When an object enters the volume of space, the electromagnetic waves may reflect off the object and strike one or more position sensitive detectors after passing through an imaging optical system such as glass, plastic lens, or a pinhole located at known distances from the sources. Mixed signal electronics may process detected signals at the position sensitive detectors to calculate position information as well as total reflected light intensity, which may be used in medical and other applications. A transparent barrier may separate the sources and detectors from the objects entering the volume of space and reflecting emitted waves. Methods and devices are provided.

Abstract: Apparatus and methods for nanoplasma switches are disclosed. In certain embodiments, a nanoplasma switching system includes a nanoplasma radio frequency (RF) switch that receives an RF signal, and a nanoplasma DC switch that receives a DC bias voltage. The nanoplasma DC switch is positioned adjacent to but spaced apart from the nanoplasma RF switch. The nanoplasma DC switch induces a nanoplasma through the nanoplasma RF switch when the DC bias voltage is set to a first voltage level. By implementing the nanoplasma switching system in this manner, DC bias to turn on or off the nanoplasma RF switch can be realized without needing to use passive components such as DC blocking capacitors, choke inductors, or baluns for isolation.

Abstract: Various examples are directed to a System on a Chip (SOC) and methods of operating the same. The SOC may access firmware code from a boot Read-Only Memory (ROM) of the SOC. The firmware code may comprise a plurality of functional blocks. The SOC may determine that firmware patching is active for the SOC and access patch data from a non-volatile memory of the SOC. The SOC may determine that a first functional block of the firmware code has been patched and access first patch code from the patch data. The first patch code may be associated with the first functional block. The SOC may execute the first patch code.

Abstract: A system for reducing clock jitter may include first jitter reducing circuitry. The first jitter reducing circuitry may be arranged between an input clock signal node carrying an input clock signal and an output clock signal node carrying an output clock signal. The first jitter reducing circuitry may include a first intermediate input clock signal node and a first intermediate output clock signal node. The first jitter reducing circuitry may include a first clock delay circuit, which may be configured to: (1) delay a first intermediate input clock signal received on the first intermediate input clock signal node by an odd integer multiple of one half of a period, and (2) invert the first intermediate input clock signal. The first jitter reducing circuitry may also include a first connection, which may be from the first intermediate output clock signal node to the first intermediate input clock signal node.

Abstract: A device to convert a detected voltage, that is indicative of current conducted by a switching circuit, to a series of electrical pulses that is indicative of electrical power dissipated by the switching circuit responsive to the current. The device includes a transconductor circuit including a first circuit to receive a reference current and a first reference voltage, and to obtain a transconductance based on an auto-generated bias current and the reference current and the first reference voltage, where a value of the transconductance is determined by the reference current and the first reference voltage. The transconductor circuit further includes a second circuit coupled to the first circuit to receive the detected voltage, and to generate a first current based on the detected voltage and the obtained transconductance.

Abstract: There is disclosed herein programmable delay lines and control methods having glitch suppression. In particular, the programmable delay lines may include latches that are triggered based on a trigger event of an input signal (which is often an edge of the input signal). The programmable delay lines may include one or more latches coupled between capacitor and transistor subassemblies and the latches, where the latches cause a delay between the time the trigger event arrives at the capacitor and transistor subassemblies and the latches. The delay can prevent the latches from updating at the same time that the edge of the input signal arrives at the capacitor and transistor subassemblies, which can suppress glitches that can causes errors in operation.

Abstract: Fin field-effect transistor (FinFET) thyristors for protecting high-speed communication interfaces are provided. In certain embodiments herein, high voltage tolerant FinFET thyristors are provided for handling high stress current and high RF power handling capability while providing low capacitance to allow wide bandwidth operation. Thus, the FinFET thyristors can be used to provide electrical overstress protection for ICs fabricated using FinFET technologies, while addressing tight radio frequency design window and robustness. In certain implementations, the FinFET thyristors include a first thyristor, a FinFET triggering circuitry and a second thyristor that serves to provide bidirectional blocking voltage and overstress protection. The FinFET triggering circuitry also enhances turn-on speed of the thyristor and/or reduces total on-state resistance.

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Abstract: Systems, devices, and methods related to electrostatic discharge (ESD) protection in radio frequency (RF) switch circuitry are provided. An electrostatic discharge (ESD)-protected radio frequency (RF) switch circuitry includes a common port; at least one terminal port; a switch circuitry coupled between the common port and the at least one terminal port, wherein the switch circuitry comprises one or more transistors connected in a stacked configuration; and a first ESD protection circuitry coupled between a gate of a first transistor of the one or more transistors and a driver circuitry for the first transistor.

Abstract: A semiconductor-based stress sensor can include a bipolar transistor device with first and second collector terminals. An excitation circuit can provide an excitation signal to an emitter terminal of the bipolar transistor device, and a physical stress indicator for the semiconductor can be provided based on a relationship between signals measured at the collector terminals in response to the excitation signal. The signals can indicate a charge carrier mobility characteristic of the semiconductor, which can be used to provide an indication of physical stress. In an example, the physical stress indicator is based on a current deflection characteristic of a base region of the transistor device.

Abstract: An analog-to-digital converter (ADC) system for providing a calibrated voltage measurement without an external reference voltage may include an ADC circuit, including an analog ADC input and a digital ADC output. The ADC system may also include circuitry to generate a first internal reference voltage and a second internal reference voltage. The ADC system may also include circuitry configured to provide a selected output from a number of inputs, wherein the inputs include inputs to receive (1) the first internal reference voltage, (2) the second internal reference voltage, and (3) a user-provided analog signal of interest, wherein the selected output can be connected to the analog ADC input, an external voltage measurement device, or both.

Abstract: Apparatus and methods for control and calibration of external oscillators are provided herein. In certain embodiments, an electronic oscillator system includes a semiconductor die and a controllable oscillator that is external to the semiconductor die. The oscillation frequency of the controllable oscillator is tuned by a first varactor and a second varactor. The semiconductor die includes a phase-locked loop (PLL) that provides fine tuning to the controllable oscillator by controlling the first varactor, and a calibration circuit that provides coarse tuning to the controllable oscillator by controlling the second varactor.

Abstract: Techniques are described through which continuous gapless voltage measurements can be synchronized between devices with independent clock sources on an asynchronous bus by slightly adjusting a speed of a local clock source for a period of time. Also, a read-out technique is described through which the synchronous measurements can be read out in a coherent way. These techniques can allow a high-accuracy time-average of the battery cell voltage (or fuel cell voltage) to be reconstructed, while allowing the same results to be synchronous across an entire battery stack, for use in instantaneous voltage/current diagnostics or calculations.

Abstract: A new method and circuit arrangement for operating an electric motor, such as a stepper motor, in a control loop for preventing motor stall, the electric motor comprising at least a first motor coil and a second motor coil, the method comprising: operating the electric motor at a velocity equal to the target velocity; receiving a load value associated with an electric motor load; and determining whether the load value is greater than a load value threshold. Based on a determination that the load value is greater than the load value threshold decreasing the velocity of the electric motor to a velocity less than the target velocity.

Abstract: Apparatus and method for establishing a stable operating point of a H-bridge with a center shunt switch. The stable operating point lets a circuit connected to the H-bridge outputs work in a more ideal condition. As such, an H-bridge with a stable operating point will yield a higher performance and/or save power. Since common mode is one of the biggest sources of electromagnetic interference, a stable operating point in an H-bridge also suppresses EMI.

Abstract: A soft-switching Phase-Shift Full-Bridge (PSFB) converter system may include a transformer comprising a primary side and a secondary side. Phase-leading circuitry and phase-lagging circuitry may be located on the primary side of the transformer. The phase leading a phase lagging circuitry may include one or more bridge switches. The system may further include clamping circuitry coupled to the secondary side of the transformer. The clamping circuitry configurable to, when in an active clamping mode, short the secondary side of the transformer. An inductance may be included on the primary side of the transformer to collect and store energy from an input source when the secondary side of the transformer is shorted. The energy stored in the inductance may be used to enable soft-switching of the bridge switches in the phase-lagging circuitry during a dead time or a circulating time of the bridge switches in the phase-leading circuitry.

Abstract: There is disclosed herein examples of systems and methods for compressing a signal. Samples of the signal can be segmented and the samples within each of the segments can be averaged to produce a value that can represent the samples within the segment. The number of samples to average in each segment may be determined based on an error threshold, such that the number of samples being averaged can be maximized to produce less data to be transmitted while maintaining the representation of the samples within the error threshold. In some embodiments, a signal can be separated into a timing reference, a representative periodic function, and a highly compressible error signal. The error signal can be utilized for reproducing a representation of the signal.

Abstract: Front-end circuitry is difficult to design for high sample rate, wide bandwidth receivers with high performance requirements on noise and linearity. One exemplary front-end circuitry is integrated on-chip with the RF ADC in a receiver, and the circuitry implements ESD protection, attenuation, and gain. The circuitry includes a multi-tap filter with LC circuits, and the filter implements a highly linear filter. Advantageously, the capacitors in the LC circuits are also used for ESD protection. Additionally, tunable attenuator cells are implemented across the multi-tap filter to provide a wide range of variable attenuation. The circuitry can further include a fixed or variable gain stage at the output. The resulting circuitry offers variable gain and attenuation while meeting bandwidth, noise, and linearity requirements.