Patents Assigned to Applied Material Inc.
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Publication number: 20250069959Abstract: A sensor can be configured to measure wafer bowing characteristics associated with a bow of a wafer after a first fabrication process is performed on the wafer in a first processing chamber and before a second fabrication process is performed on the wafer in a second processing chamber. A transfer chamber, including the sensor, can be coupled to a first process chamber and a second process chamber. The wafer bowing characteristics can be used by a controller to determine recipe parameters. The recipe parameters can be used by the controller to control environmental conditions in the transfer chamber and/or processing chamber and cause the processing chamber to perform its associated fabrication process using the recipe parameters.Type: ApplicationFiled: August 24, 2023Publication date: February 27, 2025Applicant: Applied Materials, Inc.Inventor: Mayur Govind Kulkarni
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Publication number: 20250069857Abstract: Exemplary methods of coating a metal-containing component are described. The methods are developed to increase corrosion resistance and improve coating adhesion to a metal substrate. The methods include forming a bonding layer on a metal substrate, where the bonding layer includes an oxide of a metal in the metal substrate. The coating methods further include depositing a stress buffer layer on the bonding layer, where the stress buffer layer is characterized by a stress buffer layer coefficient of thermal expansion (CTE) that is less than a metal substrate CTE and a bonding layer CTE. The coating methods also include depositing an environmental barrier layer on the stress buffer layer, where a ratio of the metal substrate CTE to an environmental barrier layer CTE is greater than or about 20:1, and where the environmental barrier layer includes silicon oxide. The metal-containing components may be used in fabrication equipment for electronic devices.Type: ApplicationFiled: November 13, 2024Publication date: February 27, 2025Applicant: Applied Materials, Inc.Inventors: Amir H. Tavakoli, Tony S. Kaushal, Peter Reimer, David Jorgensen
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Publication number: 20250069894Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.Type: ApplicationFiled: July 18, 2023Publication date: February 27, 2025Applicant: Applied Materials Inc.Inventors: Doreen Wei Ying Yong, Tuck Foong Koh, Mikhail Korolik, John Sudijono, Paul E. Gee
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Publication number: 20250069895Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of a silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor. The contacting may etch a feature in the layer of silicon-containing material. A substrate support pedestal temperature may be maintained at less than or about ?20° C. during the semiconductor processing method.Type: ApplicationFiled: August 21, 2023Publication date: February 27, 2025Applicant: Applied Materials, Inc.Inventors: Anatoli Chlenov, Kenji Takeshita, Alok Ranjan, Qian Fu, Hikaru Watanabe, Akhil Mehrotra, Lei Liao, Zhonghua Yao, Sonam Dorje Sherpa
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Publication number: 20250069884Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.Type: ApplicationFiled: August 25, 2023Publication date: February 27, 2025Applicant: Applied Materials, Inc.Inventors: Rui Lu, Bo Xie, Kent Zhao, Shanshan Yao, Xiaobo Li, Chi-I Lang, Li-Qun Xia, Shankar Venkataraman
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Publication number: 20250066913Abstract: Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.Type: ApplicationFiled: August 24, 2023Publication date: February 27, 2025Applicant: Applied Materials, Inc.Inventors: Supriya Ghosh, Susmit Singha Roy, Abhijit Basu Mallick, Nitin K. Ingle, Diwakar Kedlaya, Priya Chouhan
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Patent number: 12237149Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.Type: GrantFiled: November 10, 2022Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Deyang Li, Sunil Srinivasan, Yi-Chuan Chou, Shahid Rauf, Kuan-Ting Liu, Jason A. Kenney, Chung Liu, Olivier P. Joubert, Shreeram Jyoti Dash, Aaron Eppler, Michael Thomas Nichols
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Patent number: 12233505Abstract: A polishing pad includes a sensor assembly surrounded by a lower portion of the polishing pad, and an upper portion including a pad portion disposed on the assembly and at least a portion of a polishing layer disposed on the lower portion. The sensor assembly includes a lower body having a first pair of electrodes formed thereon, a polymer body having a second pair of electrodes formed thereon and aligned with the first pair of electrodes, and a pair of gaps between the first pair of electrodes and the second pair of electrodes.Type: GrantFiled: May 10, 2023Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Nicholas A. Wiswell, Chih Chung Chou, Dominic J. Benvegnu
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Patent number: 12236575Abstract: Embodiments of the present disclosure relate to optical devices for augmented, virtual, and/or mixed reality applications. In one or more embodiments, an optical device metrology system is configured to measure a plurality of first metrics and one or more second metrics for optical devices, the one or more second metrics including a display leakage metric.Type: GrantFiled: October 4, 2021Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Yangyang Sun, Jinxin Fu, Kazuya Daito, Ludovic Godet
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Patent number: 12235624Abstract: An electronic device manufacturing system capable of obtaining metrology data generated using metrology equipment located within a process chamber that performs a deposition process on a substrate according to a process recipe, wherein the process recipe comprises a plurality of setting parameters, and wherein the deposition process generates a plurality of film layers on a surface of the substrate. The manufacturing system can further generate a correction profile based on the metrology data. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe. The manufacturing system can further cause an etch process to be performed on the substrate according to the updated process recipe.Type: GrantFiled: December 21, 2021Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Chunlei Zhang, Tao Zhang, Jairaj Payyapilly
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Patent number: 12234549Abstract: Methods for in situ seasoning of process chamber components, such as electrodes are described. In an embodiment, the method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.Type: GrantFiled: May 5, 2023Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Sarah Michelle Bobek, Abdul Aziz Khaja, Ratsamee Limdulpaiboon, Kwangduk Douglas Lee
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Patent number: 12235144Abstract: Disclosed herein are embodiments of a sensor device, systems incorporating the same, and methods of fabricating the same. In one embodiment, a sensor device comprises a free-standing sensing element, such as a micro-electromechanical system (MEMS) device. The sensor device further comprises a metallic band to facilitate mounting the MEMS device to a mounting plate. The sensor device further comprises a conformal coating on a least a portion of a sensor region of the sensor device.Type: GrantFiled: September 14, 2021Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.—RoboticsInventors: Nir Merry, Ming Xu
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Patent number: 12236077Abstract: An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to train a machine-learning model based on the input data reflecting the feature. The manufacturing system is further configured to modify the machine-learning model in view of the virtual knob for the feature.Type: GrantFiled: April 25, 2022Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Jui-Che Lin, Yan-Jhu Chen, Chao-Hsien Lee, Shauh-Teh Juang, Pengyu Han, Wallace Wang
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Patent number: 12237186Abstract: Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a holder in a bonding chamber of a multi-chamber processing tool; transferring the holder from the bonding chamber to a cleaning chamber of the multi-chamber processing tool; cleaning the one or more dirty tools in the cleaning chamber to produce one or more cleaned tools; inspecting the one or more cleaned tools in an inspection chamber of the multi-chamber processing tool; and transferring the one or more cleaned tools to the bonding chamber.Type: GrantFiled: September 15, 2022Date of Patent: February 25, 2025Assignee: APPLIED MATERIALS, INC.Inventors: Ruiping Wang, Ying Wang, Guan Huei See, Ananthkrishna Jupudi, Praveen Kumar Choragudi
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Patent number: 12237200Abstract: Methods and apparatus for lift pin interfaces for electrostatic chucks are provided herein. In some embodiments, a lift pin interface in an electrostatic chuck includes: a dielectric plate having a support surface for a substrate; a conductive plate disposed beneath the dielectric plate and having an opening formed therethrough, wherein the dielectric plate includes a protrusion extending into the opening in the conductive plate; and a lift pin guide disposed in the opening, wherein the lift pin guide includes one or more features that extend from an upper surface of the lift pin guide and that overlap with the protrusion of the dielectric plate.Type: GrantFiled: July 20, 2021Date of Patent: February 25, 2025Assignee: APPLIED MATERIALS, INC.Inventor: Alexander Sulyman
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Patent number: 12237158Abstract: A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement of the one or more optical measurements, a film thickness of the film; determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements; and determine a process parameter value of at least one process parameter for a previously performed process that was performed on the substrate based on the etch rate.Type: GrantFiled: November 24, 2020Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Priyadarshi Panda, Lei Lian, Leonard Michael Tedeschi
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Patent number: 12233169Abstract: A method of preparing an abuse deterrent pharmaceutical composition having a drug-containing core enclosed by one or more metal oxide materials is provided. The method includes the sequential steps of (a) loading the particles comprising the drug into a reactor, (b) applying a vaporous or gaseous metal precursor to the particles in the reactor, (c) performing one or more pump-purge cycles of the reactor using inert gas, (d) applying a vaporous or gaseous oxidant to the particles in the reactor, and (e) performing one or more pump-purge cycles of the reactor using inert gas. This produces an abuse deterrent pharmaceutical composition comprising a drug containing core enclosed by one or more metal oxide materials.Type: GrantFiled: August 27, 2020Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventor: Colin C. Neikirk
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Patent number: 12237148Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.Type: GrantFiled: October 2, 2023Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere, Linying Cui
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Patent number: 12237406Abstract: Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.Type: GrantFiled: October 28, 2020Date of Patent: February 25, 2025Assignee: Applied Materials, Inc.Inventors: Soo Young Choi, Beom Soo Park, Yi Cui, Tae Kyung Won, Dong-Kil Yim
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Patent number: D1064005Type: GrantFiled: August 4, 2022Date of Patent: February 25, 2025Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Chowdhury, Nataraj Bhaskar Rao, Edwin C. Suarez, Harisha Sathyanarayana, Diego Ramiro Puente Sotomayor, Qanit Takmeel, Mohammad Kamruzzaman Chowdhury, Arun Chakravarthy Chakravarthy