Patents Assigned to Applied Material Inc.
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Publication number: 20240365551Abstract: Exemplary semiconductor structures may include a substrate. The structures may include a first layer of silicon-and-oxygen-containing material overlying the substrate. The structures may include a second layer of silicon-and-oxygen-containing material. The structures may include a first layer of metal-and-oxygen-containing material between the first layer of silicon-and-oxygen-containing material and the second layer of silicon-and-oxygen-containing material. The first layer of metal-and-oxygen-containing material may include a first metal. The structures may include a second layer of metal-and-oxygen-containing material disposed within the first layer of metal-and-oxygen-containing material. The second layer of metal-and-oxygen-containing material may include a second metal. The structures may include a gate disposed within the second layer of metal-and-oxygen-containing material.Type: ApplicationFiled: April 9, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Chang Seok Kang, Steven C. H. Hung, Hsueh Chung Chen, Naomi Yoshida, Sung-Kwan Kang, Balasubramanian Pranatharthiharan
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Publication number: 20240365545Abstract: Disclosed are approaches for wordline contact formation for 3D NAND devices. Methods may include providing a film stack of alternating first layers and second layers, forming a first lithography mask over the film stack, and performing a first series of alternating lithography and etch processes to form an array of contact opening pairs in the film stack, wherein an opening through the first lithography mask is expanded in a first direction following each etch process, and wherein a depth of the array of contact opening pairs varies in the first direction. The method may further include forming a second lithography mask over the film stack, and performing a second series of alternating lithography and etch processes, wherein an opening through the second lithography mask is expanded in a second direction following each etch process, and wherein the depth of the array of contact opening pairs varies in the second direction.Type: ApplicationFiled: April 18, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Hsiang Yu Lee, Pradeep K. Subrahmanyan
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Publication number: 20240360561Abstract: An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.Type: ApplicationFiled: July 8, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Zohreh Razavi Hesabi, Cong Trinh, Kevin Griffin, Alexander V. Garachtchenko, Kenric Choi, Vipin Jose, Saloni Sawalkar, Maribel Maldonado-Garcia, Kendrick H. Chaney
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Publication number: 20240360557Abstract: Methods for depositing metal films using a metal halide and metal organic precursors are described. The substrate is exposed to a first metal precursor and a second metal precursor to form the metal film. The exposures can be sequential or simultaneous. The metal films are relatively pure with a low carbon content.Type: ApplicationFiled: April 25, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Yixiong Yang, Tianyi Huang, Geetika Bajaj, Hsin-Jung Yu, Tengzhou Ma, Seshadri Ganguli, Tuerxun Ailihumaer, Yogesh Sharma, Debaditya Chatterjee
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Publication number: 20240363357Abstract: Embodiments of the present technology may include semiconductor processing methods. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a nitrogen-containing precursor. A substrate including one or more materials may be disposed within the processing region. The substrate may be characterized by a first bowing of the substrate. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-nitrogen-containing material on the substrate. The layer of silicon-and-nitrogen-containing material may be characterized by a tensile stress. Subsequent forming the layer of silicon-and-nitrogen-containing material, the substrate may be characterized by a second bowing of the substrate that is less than the first bowing of the substrate.Type: ApplicationFiled: April 10, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: David H. Collins, Nobuyuki Takahashi, Pin Hian Lee, Rio Soedibyo, Sanggil Bae, Houssam Lazkani, Songkram Sonny Srivathanakul, Raman Gaire, Gopal Bajaj
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Publication number: 20240363723Abstract: Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 ? on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.Type: ApplicationFiled: April 28, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Srinivas Gandikota, Tengzhou Ma, Geetika Bajaj, Debaditya Chatterjee, Hsin-Jung Yu, Pei Hsuan Lin, Yixiong Yang
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Publication number: 20240363150Abstract: Disclosed are approaches for wordline contact formation for 3D NAND devices. Methods may include providing a film stack of alternating first layers and second layers, forming a first lithography mask over the film stack, and performing a first series of alternating lithography and etch processes to form an array of contact opening pairs in the film stack, wherein an opening through the first lithography mask is expanded in a first direction following each etch process, and wherein a depth of the array of contact opening pairs varies in the first direction. The method may further include forming a second lithography mask over the film stack, and performing a second series of alternating lithography and etch processes, wherein an opening through the second lithography mask is expanded in a second direction following each etch process, and wherein the depth of the array of contact opening pairs varies in the second direction.Type: ApplicationFiled: April 19, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Hsiang Yu Lee, Pradeep K. Subrahmanyan
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Publication number: 20240363407Abstract: Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50° C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.Type: ApplicationFiled: April 28, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Jie ZHANG, Liqi WU, Cory LAFOLLETT, Tsung-Han YANG, Wei WENG, Qihao ZHU, Jiang LU, Rongjun WANG, Xianmin TANG
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Publication number: 20240363332Abstract: Methods for depositing an amorphous carbon layer on a substrate and for filling a substrate feature with an amorphous carbon gap fill are described. The method comprises performing a deposition cycle comprising: introducing a hydrocarbon source into a processing chamber; introducing a plasma initiating gas into the processing chamber; generating a plasma in the processing chamber at a temperature of greater than 600° C.; forming an amorphous carbon layer on a substrate with a deposition rate of greater than 200 nm/hr; and purging the processing chamber.Type: ApplicationFiled: July 10, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Xiaoquan Min, Kwangduk D. Lee
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Publication number: 20240363317Abstract: Methods and apparatus for cleaning a dielectric tube are described. The dielectric tube is exposed to a cleaning gas comprising a fluorine-containing compound and a microwave plasma is generated. The dielectric tube is cleaned to restore transparency and increase electronic coupling between the microwave waveguide and the plasma through the dielectric tube.Type: ApplicationFiled: April 25, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Vicknesh Sahmuganathan, Sze Chieh Tan, Kok Keong Lim, Song Seng Low, Yi Kun Kelvin Goh, Abdul Rahman Bin Abu Bakar, Syed Muhammad Darwis, Cheng Hong Tan, John Sudijono, Han Yan Koh
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Publication number: 20240363337Abstract: Semiconductor processing methods are described for forming low-? dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.Type: ApplicationFiled: April 26, 2023Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Muthukumar Kaliappan, Bo Xie, Shanshan Yao, Li-Qun Xia, Michael Haverty, Rui Lu, Xiaobo Li, Chi-I Lang, Shankar Venkataraman
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Publication number: 20240363345Abstract: A method for manufacturing a memory device includes depositing a seed layer in a memory hole extending through a memory stack. The seed layer includes particles, such as silicon particles. The seed layer is etched to produce etched particles. The etched particles act as nuclei for the growth of a crystalline channel material in the memory hole.Type: ApplicationFiled: February 14, 2024Publication date: October 31, 2024Applicant: Applied Materials, Inc.Inventors: Chang Seok KANG, Raman GAIRE, Hsueh Chung CHEN, In Soo JUNG, Houssam LAZKANI, Balasubramanian PRANATHARTHIHARAN
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Patent number: 12130561Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.Type: GrantFiled: August 22, 2022Date of Patent: October 29, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Kartik Ramaswamy, Michael D. Willwerth, Yang Yang
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Patent number: 12128446Abstract: Disclosed herein are a substrate sorter, an inspection and sorting system having the substrate sorter, and a method for the inspection and sorting system. The substrate sorter includes an annular gripper comprising a rotator and a plurality of vacuum applicators concyclically disposed around an axis, a carrier operable to move a substrate towards the rotator and into a loading region below the rotator, and an actuator coupled with the annular gripper and operable to rotate the rotator about the axis relative to the plurality of vacuum applicators while one or more of the plurality of vacuum applicators hold the substrate against the rotator.Type: GrantFiled: June 30, 2023Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Asaf Schlezinger, Markus J. Stopper
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Patent number: 12128456Abstract: A method of cleaning a substrate in a megasonic cleaning chamber, comprises: flowing a cleaning fluid through a supply tube in a megasonic cleaning chamber toward a substrate; using a megasonic transducer to generate megasonic waves through the cleaning fluid and create cavities in the cleaning fluid; and using one or more sensors to determine properties of the cavities in-situ based on emissions received from the cavities. A non-transitory computer readable medium has instructions stored thereon that, when executed, causes the method to be performed.Type: GrantFiled: April 12, 2023Date of Patent: October 29, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Banqiu Wu, Khalid Makhamreh, Eliyahu Shlomo Dagan
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Patent number: 12131952Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.Type: GrantFiled: March 2, 2023Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Brad Eaton, Madhava Rao Yalamanchili, Saravjeet Singh, Ajay Kumar, James M. Holden
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Patent number: 12131913Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.Type: GrantFiled: June 5, 2023Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Krishna Nittala, Sarah Michelle Bobek, Kwangduk Douglas Lee, Ratsamee Limdulpaiboon, Dimitri Kioussis, Karthik Janakiraman
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Patent number: 12131105Abstract: A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.Type: GrantFiled: September 15, 2021Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Preetham Prahallada Rao, Prashanth Kothnur
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Patent number: 12130465Abstract: An apparatus with a grating structure and a method for forming the same are disclosed. The grating structure includes forming a recess in a grating layer. A plurality of channels is formed in the grating layer to define slanted grating structures therein. The recess and the slanted grating structures are formed using a selective etch process.Type: GrantFiled: September 19, 2022Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Morgan Evans, Rutger Meyer Timmerman Thijssen
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Patent number: 12131900Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.Type: GrantFiled: July 26, 2022Date of Patent: October 29, 2024Assignee: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Joseph Knisley