Patents Assigned to Applied Material Inc.
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Patent number: 12278127Abstract: Embodiments disclosed herein include a method of setting a target profile. In an embodiment, the method comprises obtaining a first gain curve for one or more temperature sensor offsets, and obtaining a second gain curve for one or more zone multipliers. In an embodiment, the method further comprises combining the first gain curve and the second gain curve into a thermal model. In an embodiment, the method further comprises obtaining a reference data set, and using the thermal model to generate temperature sensor offsets and/or zone multipliers to apply to the reference data set in order to generate the target profile.Type: GrantFiled: June 8, 2022Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: Yi Wang, Wolfgang Aderhold
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Patent number: 12279359Abstract: Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.Type: GrantFiled: February 2, 2024Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: David T. Blahnik, Charles T. Carlson, Robert B. Vopat, Frank Sinclair, Paul J. Murphy, Krag R. Senior
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Patent number: 12278134Abstract: A lift apparatus includes a lift assembly and a servo-control system. The lift assembly includes at least one pneumatic actuator including a movable member to provide a load to transfer a substrate between a support and a transfer plane. The lift assembly further includes at least one proportional pneumatic valve to control fluid flow between the actuator and a pressurized fluid supply or a vent, a plurality of pressure sensors each to measure pressure in a respective supply line to the actuator, and at least one position sensor to measure a position of the movable member. The servo-control system includes a controller to determine an output force based on a commanded force and an estimated force, generate a control signal based on the output force, and apply the control signal to the proportional valve to move the movable member.Type: GrantFiled: October 23, 2023Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: Paul Wirth, Behzad Taheri
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Patent number: 12278101Abstract: Embodiments disclosed herein include methods of processing substrates in a tool. In an embodiment, the method of processing the substrate in the tool, comprises receiving an augmented recipe with a machine learning (ML) and/or an artificial intelligence (AI) module. In an embodiment, the augmented recipe comprises, a recipe for processing the substrate in the tool, and a matrix identifier that corresponds to one or more substrate properties. In an embodiment the method further comprises using the ML and/or AI module to retrieve a data set from a database, where the data set is associated with the matrix identifier, and using the ML and/or AI module to modify the augmented recipe to form a modified recipe, where the modification is dependent on the data set.Type: GrantFiled: November 11, 2021Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: Wolfgang Aderhold, Boris Axelrod, Maxim Shaposhnikov, Dayal Ramachandran, Bindusagar Marath Sankarathodi
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Patent number: 12278172Abstract: In order to relieve the stress on the substrates in a 3D stacked electronic assembly, a substrate frame is divided into a plurality of frame sections that are separated by spaces between the frame sections. These separations allow the substrates to expand/contract in response to temperature variations and other environmental conditions, and generally allow the substrates to move in one or more axial directions. The separations between the substrate portions are design-specific for each substrate design. The placement of IC packages on either side of the substrate is analyzed to identify areas of maximal warpage through physical measurements, physical model simulations, or using a trained neural network. The spaces in the substrate frame are then be placed next to or aligned with the areas of maximal warpage to reduce the stress on the substrate.Type: GrantFiled: June 28, 2022Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: Akash Agrawal, Prashanth Ganeshbaabu
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Patent number: 12278124Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.Type: GrantFiled: October 28, 2021Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: D. Jeffrey Lischer, Bon-Woong Koo, Dawei Sun, Chi-Yang Cheng, Paul Joseph Murphy, Frank Sinclair, Gregory Edward Stratoti, Tseh-Jen Hsieh, Wayne Chen, Guy Oteri
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Patent number: 12276344Abstract: Variable orifice check valves comprising a flange with a guide pin, spring and movable plate are described. The flange has a body with at least one guide pin opening in the top surface. A guide pin is positioned within the at least one guide pin opening and a spring is positioned around the guide pin. The movable plate has an opening and slides along the guide pins with the spring between the top surface of the flange body and the bottom surface of the movable plate.Type: GrantFiled: June 21, 2023Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: Muhannad Mustafa, Sanjeev Baluja
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Publication number: 20250114908Abstract: A system may include a gimbal defining a plurality of pockets, where each pocket may include a first portion and a second portion that extends between the first portion and a base of the pocket. The second portion may have a greater diameter than the first portion. The system may include a plurality of conditioning disks, where each conditioning disk is seated within the first portion of a respective pocket. The system may include a plurality of gaskets, where each gasket is seated within the second portion of a respective pocket. The system may include a plurality o-rings, each o-ring disposed between a peripheral edge of one of the plurality of conditioning disks and a lateral wall of one of the plurality of pockets. The system may include a plurality of shoulder screws for coupling the gimbal with one of the plurality of gaskets and a conditioning disk.Type: ApplicationFiled: October 9, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Nai-Chieh Huang, Akshay Aravindan, Shih-Haur Shen, Jianshe Tang, Jay Gurusamy, Chen-Wei Chang, Chih-Han Yang, Wei Lu
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Publication number: 20250115999Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a bottom plate coupled with a bottom surface of the chamber body. The chambers may include a substrate support assembly disposed within the chamber body. The substrate support assembly may include a support plate and a support stem coupled with the support plate. The chambers may include a mounting bracket that couples the support stem with a lower surface of the bottom plate. The chambers may include a plurality of tilt actuators. Each of the tilt actuators may couple the mounting bracket with the lower surface of the bottom plate. Each of the tilt actuators may be operable to adjust a vertical distance between the lower surface of the bottom plate and the mounting bracket at a mounting site of the respective tilt actuator to adjust a planarity of the support plate relative to the bottom plate.Type: ApplicationFiled: October 10, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Tuan Anh Nguyen, Rohith Kuruvath Karunakaran
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Publication number: 20250116001Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.Type: ApplicationFiled: October 6, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Allison Yau, Manoj Kumar Jana, Wen-Shan Lin, Zhiling Dun, Xinhai Han, Deenesh Padhi, Jian Li, Yuanchang Chen, Wenhao Zhang, Edward P. Hammond, Alexander V. Garachtchenko, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Sathya Ganta
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Publication number: 20250117561Abstract: A semiconductor device may include a substrate. The semiconductor device may also include a dielectric material characterized, at least in part, by a dielectric constant. The semiconductor device may include a metallic pathway formed in the dielectric material. The semiconductor device may include a region about the metallic pathway of the semiconductor device may include a plurality of air gaps within the dielectric material and arranged three-dimensionally throughout the region, where the region may include a lower dielectric constant than the dielectric constant of the dielectric material.Type: ApplicationFiled: October 6, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventor: Benjamin D. Briggs
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Publication number: 20250115698Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.Type: ApplicationFiled: October 9, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Xinyi Lu, SeyedMahmoud Hosseini, Sudhakar Madhusoodhanan, Srikant Pathak
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Publication number: 20250114806Abstract: Exemplary substrate processing system faceplates may include a plate that is characterized by a first surface and a second surface opposite the first surface. The second surface may define a plurality of recesses that extend through a portion of a thickness of the plate. The plate may define a plurality of apertures through the thickness of the plate. Each aperture may extend through a bottom surface of one recess of the plurality of recesses. Each recess may have a greater diameter than the aperture extending through the bottom surface of the recess. The faceplate may include a plurality of shape-memory actuators. Each shape-memory actuator may be seated within a respective one of the plurality of recesses. Each shape-memory actuator may define an actuator aperture. A diameter of the actuator aperture each shape memory actuator may be variable.Type: ApplicationFiled: October 6, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Barath Kumar, Sumesh Suresh
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Publication number: 20250118570Abstract: Methods of semiconductor processing may include forming plasma effluents. The plasma effluents may then contact a carbon-containing hardmask and an oxide cap. The plasma effluents can etch one or more features in the oxide cap through one or more apertures of the carbon-containing hardmask. Etching can create a tapered profile for one or more features in the oxide cap. The one or more features can be characterized by a critical dimension at the bottom of the one or more features. The critical dimension can be less than or about 80% of a width of the one or more apertures.Type: ApplicationFiled: October 6, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Mir Abdulla Al Galib, Sonam Dorje Sherpa, Kenji Takeshita, Alok Ranjan
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Publication number: 20250118563Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (TiN), in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as FinFETs, GAAs, and the like, with a gapfill material without creating a seam. One or more embodiments include selective deposition processes using a carbon (C) layer in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.Type: ApplicationFiled: October 6, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Zhihui Liu, Shih Chung Chen, Haoyan Sha, Alexander Jansen, Zhebo Chen, Janardhan Devrajan, Tza-Jing Gung
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Publication number: 20250116028Abstract: Exemplary electroplating systems may include a vessel. The systems may include a head that is configured to hold a substrate. The head may be positionable within an interior of the vessel. The systems may include a spray jet array disposed within the interior of the vessel. The spray jet array may include a plate defining a plurality of apertures through a thickness of the plate. The systems may include at least one fluid pump that is fluidly coupled with an inlet end of each of the plurality of apertures.Type: ApplicationFiled: October 10, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Paul R. McHugh, Gregory J. Wilson, Kyle M. Hanson, Nolan L. Zimmerman, Randy A. Harris, John L. Klocke, Eric J. Bergman, Keith Edward Ypma
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Publication number: 20250118557Abstract: Methods of semiconductor processing may include forming plasma effluents of a hydrogen-and-fluorine-containing precursor. The plasma effluents may then contact a silicon-containing hardmask material and a photoresist material. The silicon-containing hardmask material can overlay an organic material overlaying a substrate in a processing region of a semiconductor processing chamber. Etching the silicon-containing hardmask material with the plasma effluents while the photoresist material with the plasma effluents. The silicon-containing hardmask material can be etched at a selectivity greater than or about 10 relative to the photoresist material. A temperature in the processing region can be maintained at about ?20° C. or less.Type: ApplicationFiled: October 5, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Sonam Dorje Sherpa, Mir Abdulla Al Galib, Alok Ranjan, Kenji Takeshita
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Publication number: 20250114903Abstract: Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a flexible membrane coupled with the carrier body. The flexible membrane may include a substrate-receiving surface that faces away from the carrier body. The substrate-receiving surface may include a plurality of gripping elements that protrude away from the substrate-receiving surface. Each of the plurality of gripping elements may have a maximum lateral dimension that is no greater than 2 mm.Type: ApplicationFiled: October 10, 2023Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Chen-Wei Chang, Priscilla Diep, Jimin Zhang, Taketo Sekine, Jianshe Tang, Haosheng Wu
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Publication number: 20250120065Abstract: The present technology includes vertical cell dynamic random-access memory (DRAM) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.Type: ApplicationFiled: October 2, 2024Publication date: April 10, 2025Applicant: Applied Materials, Inc.Inventors: Zhijun CHEN, Fredrick FISHBURN, Balasubramanian PRANATHARTHIHARAN
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Patent number: D1071103Type: GrantFiled: April 11, 2022Date of Patent: April 15, 2025Assignee: Applied Materials, Inc.Inventors: Prahallad Iyengar, Janisht Golcha, Kartik Shah, Chaowei Wang, Sanjeev Baluja
