Patents Assigned to Applied Materials, Inc.
  • Patent number: 10672628
    Abstract: An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: June 2, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Brian J. Brown
  • Patent number: 10672641
    Abstract: A support member for a thermal processing chamber is described. The support member has a sol coating on at least one surface. The sol coating contains a material that blocks a desired wavelength or spectrum of radiation from being transmitted by the material of the support member. The sol coating may be a multi-layer structure that may include adhesion layers, transition layers, and cap layers, in addition to radiation-blocking layers.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: June 2, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Joseph M. Ranish
  • Patent number: 10668533
    Abstract: An additive manufacturing system includes a platen having a top surface to support an object being manufactured, a feed material dispenser to deliver a plurality of successive layers of feed material over the platen, an energy source positioned above the platen to fuse at least a portion of an outermost layer of feed material, and a coolant fluid dispenser to deliver a coolant fluid onto the outermost layer of feed material after at least a portion of the outermost layer has been fused.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 2, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Hou T. Ng, Nag B. Patibandla, Ajey M. Joshi, Bharath Swaminathan, Ashavani Kumar, Eric Ng, Bernard Frey, Kasiraman Krishnan
  • Patent number: 10672642
    Abstract: Exemplary apparatuses for centering and/or leveling a pedestal of a processing chamber may include a mounting block having a central axis, a set of first gauges mounted on the mounting block, and a set of second gauges mounted on the mounting block. The set of second gauges may be mounted substantially perpendicular to the set of first gauges. The plurality of first gauges may be configured to obtain measurements indicative of a degree of parallelism between a gas distribution plate of the processing chamber and the pedestal. The plurality of second gauges may be configured to obtain measurements indicative of a degree of axial alignment of a ring member of the processing chamber and the pedestal. The exemplary apparatuses may be used for centering and/or leveling the pedestal under vacuum.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: June 2, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Paneendra Prakash Bhat, Mehmet Samir, Nikolai Kalnin
  • Patent number: 10669629
    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: June 2, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Amit Kumar Bansal, Juan Carlos Rocha-Alvarez, Sanjeev Baluja, Sam H. Kim, Tuan Anh Nguyen
  • Patent number: 10670393
    Abstract: The methods and systems disclosed here leverage currently available reliable top down imaging techniques used by SEMs and use computational methods to synthesize accurate 3D profiles of features of high aspect ratio structures in a device. Radial cross-sectional profiles obtained from different locations along the lateral direction at different heights/depths are stitched together to create one composite 3D profile of the HAR feature.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: June 2, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Pradeep Subrahmanyan
  • Patent number: 10672591
    Abstract: Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: June 2, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Tom K. Cho, Kartik Ramaswamy, Yogananda Sarode Vishwanath
  • Publication number: 20200168503
    Abstract: Methods of depositing a carbon film are discussed. Some embodiments selectively deposit a carbon film on a metal surface over a dielectric surface. Some embodiments form carbon pillars on metal surfaces selectively over dielectric surfaces. Some embodiments utilize carbon pillars in forming self-aligned vias.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 28, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Abhijit Basu Mallick
  • Publication number: 20200168463
    Abstract: Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 28, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Jungmin Ko, Kwang-Soo Kim, Tom Choi, Nitin Ingle
  • Patent number: 10665494
    Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Niranjan Kumar, Seshadri Ramaswami, Shay Assaf, Amikam Sade, Andy Constant, Maureen Breiling
  • Patent number: 10665503
    Abstract: A method for at least partially filling a feature on a workpiece generally includes obtaining a workpiece including a feature depositing a first conformal conductive layer in the feature, and thermally treating the workpiece to reflow the first conformal conductive layer in the feature.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: May 26, 2020
    Assignee: APPLIED Materials, Inc.
    Inventor: Ismail T. Emesh
  • Patent number: 10665542
    Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Sang Ho Yu, Paul F. Ma, Jiang Lu, Ben-Li Sheu
  • Patent number: 10665484
    Abstract: Embodiments described herein provide a thermal processing apparatus with a heat source and a rotating substrate support opposite the heat source, the rotating substrate support comprising a support member with a light blocking member. The light blocking member may be an encapsulated component, or may be movably disposed inside the support member. The light blocking member may be opaque and/or reflective, and may be a refractory metal.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Joseph M. Ranish
  • Patent number: 10663491
    Abstract: A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zheng John Ye, Jay D. Pinson, II, Juan Carlos Rocha, Abdul Aziz Khaja
  • Patent number: 10665426
    Abstract: Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yana Cheng, Zhefeng Li, Chi Hong Ching, Yong Cao, Rongjun Wang
  • Patent number: 10665415
    Abstract: An apparatus and method are provided. In one embodiment. an apparatus may include a main chamber, where the main chamber includes an electrode assembly. The electrode assembly may include a plurality of electrodes arranged between a chamber entrance and a chamber exit of the main chamber. The apparatus may include a beam tunnel, connected to the chamber entrance, configured to conduct an ion beam to the main chamber; and an electrostatic tuner, disposed in the beam tunnel, the electrostatic tuner comprising at least one tuner electrode, independently coupled to a tuner voltage assembly.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Frank Sinclair, Shengwu Chang
  • Patent number: 10661383
    Abstract: Methods of dicing semiconductor wafers are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a material layer over and between the plurality of singulated dies above the dicing tape. The method also includes expanding the dicing tape, wherein a plurality of particles is collected on the material layer during the expanding.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Wei-Sheng Lei, Jungrae Park, Ajay Kumar, Brad Eaton
  • Patent number: 10665421
    Abstract: A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Tsung-Liang Chen, Kevin R. Anglin, Simon Ruffell
  • Patent number: 10662520
    Abstract: A method for recycling a substrate process component of a processing chamber is provided. In one example, the recycling process includes retrieving a reference dimension for the substrate process component. The substrate process component includes a side wall having a bottom surface, an outer surface, a pre-defined wall thickness between the bottom surface and the outer surface, and a residue layer. The reference dimension corresponds to the pre-defined wall thickness. The recycling process includes machining the substrate process component with a mechanical cutting tool. The machining includes securing the substrate process component to a work piece holder and passing the mechanical cutting tool across the outer surface in a machining operation controlled by a controller to remove the residue layer. The controller uses the reference dimension to control the machining operation so that the substrate process component has the reference dimension after removal of the residue layer.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: May 26, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Brian T. West
  • Patent number: 10661223
    Abstract: A method and apparatus for thermally processing a substrate is described. The apparatus includes a thermal processing chamber having an interior volume which includes a top portion and a side wall. The apparatus also include a getter assembly comprising a getter configured as a wire disposed in the top portion and extending into the interior volume proximal to the side wall.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Joseph M. Ranish