Abstract: Disclosed herein is a device and method for monitoring particulate matter present in gases in exhaust streams from semiconductor process chambers and in the chambers. A particle detection system includes a detector housing mounted on an exhaust line of a process device or on a processing chamber. The system includes a laser beam that is directed into a flow stream of particles in the exhaust line or in the chamber and an imaging detector that is mounted with a perpendicular view of the laser beam. The detector identifies particles that scatter the laser light. A method to monitor particulates includes mounting a detector housing, directing a laser beam into a flow stream of particles, mounting an imaging detector with a perpendicular view of the laser beam, and detecting particles in the flow stream as the particles pass through the laser beam.

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500 °C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.

Abstract: A radio frequency (RF) rod adapted for installation in an electrostatic chuck, the RF rod including a main body defined by central portion, a first terminal portion extending axially from a first end of the central portion, and a second terminal portion extending axially from a second end of the central portion, wherein a diameter of the central portion is greater than diameters of the first terminal portion and the second terminal portion.

Abstract: Disclosed are approaches for forming a super junction transistor. One approach may include patterning a first plurality of openings through a first masking layer, wherein the first masking layer is formed over a device stack, and wherein the device stack includes an epitaxial layer over a substrate. The method may further include performing a first implant through the openings to form a first plurality of dopant cores in the epitaxial layer, wherein the first implant comprises directing p-type ions to an exposed epitaxial layer. The method may further include patterning a second plurality of openings through a second masking layer formed over the epitaxial layer. The method may further include performing a second implant through the second plurality of openings of to form a second plurality of dopant cores in the epitaxial layer, wherein the second implant includes directing n-type ions to the exposed epitaxial layer.

Abstract: Disclosed are approaches for forming a transistor including an asymmetric trench sidewall insulator. One approach includes providing an insulator layer along a first sidewall and a second sidewall of each trench of a plurality of trenches, wherein the plurality of trenches are formed in a base layer of a semiconductor device. The approach further incudes removing, in response to an ion treatment, the insulator layer from the first sidewall without removing the insulator layer from the second sidewall, wherein the ion treatment comprises ions delivered to the first sidewall at a non-zero angle relative to a perpendicular extending from a plane defined by an upper surface of the base layer. The approach further includes forming a second insulator layer along the first sidewall, wherein a first thickness of the insulator layer is greater than a second thickness of the second insulator layer.

Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.

Abstract: Advancements in semiconductor packaging technology have faced challenges such as signal integrity loss, parasitic capacitance, and limited interconnect density in stacked chip configurations. These challenges are addressed by introducing hybrid bonding interfaces (HBIs) and a novel grounding mechanism for through-silicon vias (TSVs). HBIs enable fine-pitch, high-density interconnects through direct metal-to-metal or dielectric-to-dielectric bonding, eliminating the need for microbumps. TSV grounding reduces the metal-insulator-semiconductor (MIS) effect by shunting electric fields to ground metal layers and ground HBIs. This grounding mechanism improves broadband return loss and insertion loss performance, mitigating parasitic effects. These advancements enhance electrical performance, reduce capacitive coupling effects, and improve signal integrity in high-speed data transfer applications.

Abstract: An apparatus for processing a semiconductor substrate, such as an optical device, is described herein. The apparatus includes a substrate carrier which is configured to enable a processing chamber configured to process larger substrates to process a smaller substrate without retrofitting the processing chamber. The substrate carrier includes a carrier base and a clamp ring. The carrier base includes a plurality of gas channels formed within a substrate pocket. The clamp ring is disposed on the carrier base and over the substrate and holds the substrate in place. The clamp ring is either weighted or configured to be held by a separate chamber clamping mechanism.

Abstract: An ion source that includes a cathode near a first end plate and a non-planar second end plate is disclosed. The non-planar second end plate serves to counteract the effect of the plasma on the second end plate. In some embodiments, the plasma has the ability to erode the second end plate. Rather than making the entire second end plate thicker, the second end plate is only made thicker in the regions that are affected by the plasma. In this way, less material is used in the production of the second end plate, and increased lifetime is achieved. This concept may also be used in environments where the plasma serves to deposit material on the second end plate.

Abstract: Cooling flanges and semiconductor manufacturing processing chamber comprising the cooling flanges are disclosed. The cooling flanges comprise a flange body with a gas channel extending through the length thereof. The gas channel has an inlet funnel, a middle channel and an outlet funnel with a purge gas inlet in a side of the flange body. The purge gas inlet connects to the middle channel of the gas channel.

Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

Abstract: A method of testing a substrate, particularly a packaging substrate, with at least one electron beam column is described. The packaging substrate can be a panel level packaging substrate or an advanced packaging substrate.

Abstract: Implementations relate to techniques of monitoring conditions of tools used in device manufacturing systems. The techniques include storing a failure index (FI) model generated using run-time sensor data that was collected during operations of a tool that occurred prior to a low number of failures of the tool or even before any such failures occur. The FI model includes an FI function of the run-time sensor data and FI threshold value(s) associated with conditions of the tool. The techniques further include collecting new run-time sensor data and applying the FI model to the new run-time sensor data to identify one or more conditions associated with the tool. The techniques further include updating the FI model responsive to one or more tool failures.

Abstract: The present disclosure provides method of processing a substrate. The method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. A plasma is generated at the substrate by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film is doped film with a hydrogen dopant to form a doped diamond-like carbon film. The hydrogen dopant is thermally annealing to the doped diamond-like carbon film.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a conditioner head to hold a conditioner disk in contact with the polishing pad, a motor to generate relative motion between the polishing pad and the conditioner disk so as to condition the polishing pad, an in-situ acoustic monitoring system having an acoustic sensor to receive acoustic signals from the conditioner disk, and a controller configured to analyze a signal from the acoustic sensor and determine a characteristic of the conditioner disk or conditioner head based on the signal.

Abstract: The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a bi-metallic silicide layer disposed on the substrate in the one or more features, and at least a first metal layer. The bi-metallic silicide layer includes a first metal, a second metal different than the first metal, and a silicon containing compound, and includes greater than or about 0.8 E+14 per cm?2 second metal atoms. The first metal layer includes the first metal and overlies the bi-metallic silicide layer.

Abstract: Disclosed systems and techniques are directed to correcting an out-of-plane (OPD) deformation of a substrate by causing a stress-compensation layer (SCL) to be deposited on the substrate, obtaining, using optical inspection data, a profile of the OPD of the substrate. The techniques further include obtaining a dataset with a representation of an influence function for the substrate, the influence function characterizing a deformation response of the substrate caused by a point-like mechanical influence. The techniques further include performing a regression computation to determine, based at least on the profile of the OPD of the substrate and the influence function, a distribution of a stress-mitigation irradiation of the SCL that mitigate the OPD of the substrate. The techniques further include performing, using the determined distribution of the stress-mitigation irradiation, a stress-mitigation irradiation of the SCL.

Abstract: Embodiments disclosed herein include an apparatus with a chamber with a first opening and a second opening. In an embodiment, a first window seals the first opening, and a first mirror is outside of the chamber. The first window and the first mirror are oriented in a non-parallel arrangement with each other. In an embodiment, a second window seals the second opening, and a second mirror is outside of the chamber. The second window and the second mirror are oriented in a non-parallel arrangement with each other, and wherein the first mirror is parallel to the second mirror.