Patents Assigned to Applied Materials, Inc.
  • Patent number: 10294559
    Abstract: A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: May 21, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Yoshiaki Tanase, Makoto Inagawa, Akihiro Hosokawa
  • Patent number: 10297458
    Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: May 21, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Dongqing Yang, Tien Fak Tan, Peter Hillman, Lala Zhu, Nitin K. Ingle, Dmitry Lubomirsky, Christopher Snedigar, Ming Xia
  • Patent number: 10297441
    Abstract: Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: May 21, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Steven Wolf, Mary Edmonds, Andrew C. Kummel, Srinivas D. Nemani, Ellie Y. Yieh
  • Patent number: 10297462
    Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: May 21, 2019
    Assignee: Applied Materials Inc.
    Inventors: Jeffrey W. Anthis, Benjamin Schmiege, David Thompson
  • Patent number: 10297483
    Abstract: A substrate carrier adapted to use in a processing system includes an electrode assembly and a support base. The electrode assembly is configured to generate an electrostatic chucking force for securing a substrate to the substrate carrier. The support base has a heating/cooling reservoir formed therein. The electrode assembly and the support base form an unitary body configured for transport within a processing system. A quick disconnect is coupled to the body and configured to trap a heat regulating medium in the reservoir heating/cooling reservoir when the body is decoupled from a source of heat regulating medium.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: May 21, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: John M. White, Zuoqian Wang
  • Patent number: 10295979
    Abstract: Embodiments presented herein provide techniques for executing a block-based workflow to provide a schedule for a semiconductor manufacturing environment. The block-based workflow includes a plurality of blocks and each block specifies a set of operations to be performed upon execution of each block. One embodiment includes extracting scheduling data from the semiconductor manufacturing environment, determining an allocation of the number of lots to one or more devices operating in the semiconductor manufacturing environment, determining an order in which the lots should be processed by the one or more devices and publishing results of the allocation and processing order to at least one another device in the semiconductor manufacturing environment, based on the plurality of blocks in the block-based workflow.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: May 21, 2019
    Assignee: Applied Materials, Inc.
    Inventor: David Everton Norman
  • Patent number: 10296376
    Abstract: Embodiments presented herein provide techniques for executing a block-based workflow to perform a planning process for a semiconductor manufacturing environment. The block-based workflow includes a plurality of blocks that specify a set of operations for performing the planning process. One embodiment includes extracting planning data from a spreadsheet application, converting the data from a first schema to a second schema, generating a plan for the semiconductor manufacturing environment, and publishing the plan to the spreadsheet application, based on the plurality of blocks in the block-based workflow.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: May 21, 2019
    Assignee: Applied Materials, Inc.
    Inventor: David Everton Norman
  • Patent number: 10289003
    Abstract: An image correction application relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed. The embodiments described herein relate to a software application platform, which corrects non-uniform image patterns on a substrate. The application platform method includes in a digital micromirror device (DMD) installed in an image projection system, the DMD having a plurality of columns, each column having a plurality of mirrors, disabling at least one entire column of the plurality of columns, exposing a first portion of the substrate to a first shot of electromagnetic radiation, exposing a second portion of the substrate to a second shot of electromagnetic radiation, and iteratively translating the substrate a step size and exposing another portion of the substrate to another shot of electromagnetic radiation until the substrate has been completely exposed to shots of electromagnetic radiation.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: May 14, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Thomas L. Laidig, Joseph R. Johnson, Christopher Dennis Bencher
  • Patent number: 10290459
    Abstract: Magnetron configurations that provide more efficient and/or more uniform cooling characteristics and methods for forming the magnetrons are provided. The magnetron includes one or more flow directing structures disposed between parallel cooling fins. The flow directing structures direct air flow across various surfaces of the cooling fins that otherwise would be obstructed by magnetron components, reducing the incidence and/or magnitude of hot spots on the cooling fins and/or on other magnetron components. The flow directing structures also adjust flow rates to improve cooling efficiency.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: May 14, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Govinda Raj, Simon Yavelberg, Ramprakash Sankarakrishnan
  • Patent number: 10290504
    Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: May 14, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wei Liu, Theresa Kramer Guarini, Huy Q. Nguyen, Malcolm Bevan, Houda Graoui, Philip A. Bottini, Bernard L. Hwang, Lara Hawrylchak, Rene George
  • Patent number: 10290469
    Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: May 14, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Valentin N. Todorow, Gary Leray, Michael D. Willwerth, Li-Sheng Chiang
  • Publication number: 20190139743
    Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.
    Type: Application
    Filed: December 31, 2018
    Publication date: May 9, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Xinglong Chen, Dmitry Lubomirsky, Shankar Venkataraman
  • Publication number: 20190139788
    Abstract: Aspects of the disclosure generally relate to methods of immobilizing die on a substrate. In one method one or more immobilization features are formed in a selected pattern on a substrate. A die is positioned in contact with the one or more immobilization features and the substrate. The one or more immobilization features are cured, and a mold layer is formed on top of the cured one or more immobilization features and the die so as to encapsulate the die.
    Type: Application
    Filed: October 25, 2018
    Publication date: May 9, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Boyi FU, Han-Wen CHEN, Kyuil CHO, Sivapackia GANAPATHIAPPAN, Roman GOUK, Steven VERHAVERBEKE, Nag B. PATIBANDLA, Yan ZHAO, Hou T. NG, Ankit VORA, Daihua ZHANG
  • Patent number: 10283344
    Abstract: The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Steven Verhaverbeke, Han-Wen Chen, Roman Gouk, Kurtis Leschkies
  • Patent number: 10278501
    Abstract: A load lock door assembly with side actuation is disclosed. Load lock door assembly includes a load lock door and a door support assembly coupled thereto. Door support assembly includes one or more pivot members pivotable relative to one or more sides of the load lock body, a door support bracket coupled to the load lock door, one or more separator side actuators coupled between the door support bracket being actuatable to separate the load lock door from a sealing surface, and one or more pivot side actuator operable to pivot the load lock door above or below the load lock entry. Load lock apparatus with side actuation, systems including one or more load lock door assemblies with side actuation, and methods of operating load lock door assemblies are provided, as are numerous other aspects.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: May 7, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Eran Weiss, Travis Morey, Nir Merry, Paul B. Reuter, Izya Kremerman, Jeffrey C. Hudgens, Dean C. Hruzek
  • Patent number: 10283370
    Abstract: Exemplary methods for selectively removing silicon nitride may include flowing a fluorine-containing precursor, and oxygen-containing precursor and a silicon-containing precursor into a local plasma to form plasma effluents. The plasma effluents may remove silicon nitride at significantly higher etch rates compared to exposed silicon oxide on the substrate. The methods may also remove silicon nitride more rapidly that silicon carbide and silicon oxycarbide which broadens the utility of the present technology to semiconductor applications.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: May 7, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Onintza Ros Bengoechea, Nancy Fung
  • Patent number: 10281335
    Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources, used to measure a broad range of low to high temperatures in the RTP chamber. In one example, two or more lasers, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, which measures temperatures below about 200° C., are used. In another example, two or more LEDs, one of which emits pulses of radiation at 1,030 nm and one of which emits pulses of radiation at 1,080 nm, are used. In yet another example, a broadband radiation source is used to emit pulses of radiation at least at 1,030 nm and 1,080 nm. These radiation sources are useful for detection of a broad range of low to high temperatures in the RTP chamber.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Samuel C. Howells
  • Patent number: 10283345
    Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xiangjin Xie, Feng Q. Liu, Daping Yao, Alexander Jansen, Joung Joo Lee, Adolph Miller Allen, Xianmin Tang, Mei Chang
  • Patent number: 10283329
    Abstract: Apparatuses and methods are provided that, in some embodiments use an adjustable middle coil to tune plasma density in a plasma processing system. For example, in one embodiment, a plasma processing apparatus includes an impedance match circuit coupled to an Rf power source. The impedance match circuit measures voltage and current at an inner and an outer coil. The match circuit calculates plasma density from the measured voltage and/or current. An adjustable middle coil located between the inner and outer coils is adjusted and/or replaced to tune the plasma density radial profile.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Anurag Kumar Mishra, James Rogers, John Poulose
  • Patent number: 10281261
    Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Khokan C. Paul, Edward Budiarto, Todd Egan, Mehdi Vaez-Iravani, Jeongmin Lee, Dale R. Du Bois, Terrance Y. Lee