Patents Assigned to Applied Materials, Inc.
  • Publication number: 20250129481
    Abstract: Vapor deposition processing chamber temperature control apparatus and vapor deposition processing chambers incorporating the temperature control apparatus are described. The temperature control apparatus has a base plate with a plurality of reflectors arranged in at least two annular zones, each annular zone separated into at least two sector zones. The reflectors are configured to decrease a specific side-to-side temperature non-uniformity profile of a heated substrate support positioned above the base plate in the vapor deposition processing chamber.
    Type: Application
    Filed: October 19, 2023
    Publication date: April 24, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Muhannad Mustafa, Aditya Chuttar
  • Publication number: 20250132165
    Abstract: Methods of removing molybdenum oxide from a surface of a substrate comprise exposing the substrate having a molybdenum oxide layer on the substrate to a halide etchant having the formula RmSiX4-m, wherein m is an integer from 1 to 3, X is selected from iodine (I) and bromine (Br) and R is selected from the group consisting of a methyl group, ethyl group, propyl group, butyl group, cyclohexyl group and cyclopentyl group. The methods may be performed in a back-end-of-the line (BEOL) process, and the substrate contains a low-k dielectric material.
    Type: Application
    Filed: October 20, 2023
    Publication date: April 24, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Jiajie Cen, Feng Q. Liu, Zheng Ju, Zhiyuan Wu, Kevin Kashefi, Mark Saly, Xianmin Tang
  • Publication number: 20250132175
    Abstract: A window component, a chamber, and a method of processing substrates are described herein. In one example, a semiconductor process chamber window component comprises a transparent quartz body. The body comprises a top surface, a bottom surface, a central portion disposed near a center axis of the body, and one or more fluid channels formed within the body. The one or more fluid channels are configured to flow a fluid from a first side of the body towards a second side of the body and the first side is disposed opposite the second side.
    Type: Application
    Filed: October 18, 2023
    Publication date: April 24, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Tetsuya ISHIKAWA, Kim Ramkumar VELLORE, Amir H. TAVAKOLI
  • Publication number: 20250133965
    Abstract: Exemplary substrate processing methods are described. The methods may include providing a scandium-doped aluminum nitride layer on a metal layer. They may further include etching a portion of the scandium-doped aluminum nitride layer with an etching composition. The etching composition may include greater than or about 80 wt. % phosphoric acid. The compositions may further be characterized by a temperature of greater than or about 90° C. during etching.
    Type: Application
    Filed: August 25, 2022
    Publication date: April 24, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Vijay Bhan Sharma, Bharatwaj Ramakrishnan, Sukti Chatterjee
  • Patent number: 12283647
    Abstract: A photocurable composition includes quantum dots, quantum dot precursor materials, a chelating agent, one or more monomers, and a photoinitiator. The quantum dots are selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range. The second wavelength band is different than the first wavelength band. The quantum dot precursor materials include metal atoms or metal ions corresponding to metal components present in the quantum dots. The chelating agent is configured to chelate the quantum dot precursor materials. The photoinitiator initiates polymerization of the one or more monomers in response to absorption of radiation in the second wavelength band.
    Type: Grant
    Filed: February 16, 2024
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Yingdong Luo, Daihua Zhang, Hou T. Ng, Sivapackia Ganapathiappan, Nag B. Patibandla
  • Patent number: 12284803
    Abstract: The present disclosure generally relates to dynamic random access memory (DRAM) devices and to semiconductor fabrication for DRAM devices. Certain embodiments disclosed herein provide an integrated processing system and methods for forming CMOS contact, DRAM array bit line contact (BLC), and storage node structures. The integrated processing system and methods enable deposition of contact and storage node layers with reduced contamination and improved quality, thus reducing leakage current and resistance for the final contact and storage node structures.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: April 22, 2025
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Nicolas Louis Breil, Fredrick Fishburn, Byeong Chan Lee
  • Patent number: 12283503
    Abstract: A method for a substrate measurement subsystem is provided. An indication is received that a substrate being processed at a manufacturing system has been loaded into a substrate measurement subsystem. First positional data of the substrate within the substrate measurement subsystem is determined. One or more portions of the substrate to be measured by one or more sensing components of the substrate measurement subsystem are determined based on the first positional data of the substrate and a process recipe for the substrate. Measurements of each of the determined portions of the substrate are obtained by one or more sensing components of the substrate measurement subsystem. The obtained measurements of each of the determined portions of the substrate are transmitted to a system controller.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Upendra V. Ummethala, Blake Erickson, Prashanth Kumar, Michael Kutney, Steven Trey Tindel, Zhaozhao Zhu
  • Patent number: 12283460
    Abstract: A system and method for creating a beam current profile that eliminates variations that are not position dependent is disclosed. The system includes two Faraday sensors; one which is moved across the ion beam and a second that remains at or near a certain location. The reference Faraday sensor is used to measure temporal variations in the beam current, while the movable Faraday sensor measures both the position dependent variations and the temporal variations. By combining these measurements, the actual position dependent variations of the scanned ion beam can be determined. This resultant beam current profile can then be used to control the scan speed of the electrostatic or magnetic scanner.
    Type: Grant
    Filed: August 29, 2022
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Tyler Wills, Richard Allen Sprenkle
  • Patent number: 12281381
    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: April 22, 2025
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sireesh Adimadhyam, Shouyin Zhang
  • Patent number: 12281387
    Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.
    Type: Grant
    Filed: December 30, 2021
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Mark Saly, David Thompson, Annamalai Lakshmanan, Avgerinos V. Gelatos, Joung Joo Lee
  • Patent number: 12283484
    Abstract: Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Nancy Fung, Larry Gao
  • Patent number: 12283500
    Abstract: A direct current (DC) power is supplied to a heating element embedded into a substrate support assembly (SSA). A voltage across the heating element and a current through the heating element is measured as the DC power is supplied to the heating element. A resistance of the heating element is determined based on the measured voltage and current. A temperature measurement for the heating element and/or a zone including the heating element is obtained based on signal(s) of a temperature sensor. A temperature model is updated based on the determined resistance and the obtained temperature measurement. The heating element embedded in the SSA and/or an additional heating element embedded in the SSA or in another SSA is controlled based on the updated temperature model during a substrate process.
    Type: Grant
    Filed: April 12, 2024
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Paul Zachary Wirth, Kiyki-Shiy Shang, Mikhail Taraboukhine
  • Patent number: 12280465
    Abstract: Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.
    Type: Grant
    Filed: October 16, 2023
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Vijayabhaskara Venkatagiriyappa, Nitin Bhargav, Tae Kwang Lee
  • Patent number: 12281382
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.
    Type: Grant
    Filed: May 24, 2023
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
  • Patent number: 12282315
    Abstract: A method includes determining queue times associated with operations of a sequence recipe. The operations are associated with production of substrates in a substrate processing system. The method further includes generating a schedule based on the queue times. The method further includes transmitting the schedule to a controller of the substrate processing system. The controller is to control the substrate processing system to produce the substrates based on the schedule.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventor: Chongyang Wang
  • Patent number: 12282256
    Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.
    Type: Grant
    Filed: October 22, 2021
    Date of Patent: April 22, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Farzad Houshmand, Wayne French, Anantha Subramani, Kelvin Chan, Lakmal Charidu Kalutarage, Mark Joseph Saly
  • Publication number: 20250121472
    Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided that are particularly suited for polishing substrates utilized in hybrid bonding applications. Methods and articles may include a plurality of first polishing elements, where at least one of the plurality of first polymer layers forms the polishing surface; and one or more second polishing elements, where at least a region of each of the one or more second polishing elements is disposed between at least one of the plurality of first polishing elements and a supporting surface of the polishing pad. One or more first polishing elements have a Shore D hardness of greater than 60, one or more second polishing elements have a Shore D hardness of from about 20 to less than 60, and the polishing article has a total Shore D hardness of greater than or about 50.
    Type: Application
    Filed: October 12, 2023
    Publication date: April 17, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Liu Jiang, Prayudi Lianto, Santosh Kumar Rath, Nina Bao, Muhammad Adli Danish, Aniruddh Khanna, Pin Gian Gan, Mohammad Faizal Bin Aermie Ang, Mayu Yamamura, Sivapackia Ganapathiappan, Daniel Redfield, El Mehdi Bazizi, Yen-Chu Yang, Pang Yen Ong, Rajeev Bajaj
  • Publication number: 20250125154
    Abstract: Exemplary methods and systems of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. Methods may include forming a low quality oxide within one or more of the recesses, where the low quality oxide and a silicon-containing material each contain an exposed surface. Methods include contacting the low quality oxide and the high quality semiconductor material with a passivating agent selective to a surface defect of the low quality oxide. Methods include contacting the substrate with an etching agent and/or a cleaning agent, where the contacting with the cleaning agent removes the high quality semiconductor material at an equal or faster rate than the low quality oxide.
    Type: Application
    Filed: October 12, 2023
    Publication date: April 17, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Lala Zhu, Yimin Huang, Shi Che, Yi Jin, Dongqing Yang, Lakmal C. Kalutarage, Anchuan Wang, Nitin K. Ingle
  • Publication number: 20250125145
    Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.
    Type: Application
    Filed: October 11, 2023
    Publication date: April 17, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Tianyang Li, Hang Yu, Rui Cheng, Deenesh Padhi, Woongsik Nam
  • Patent number: D1071886
    Type: Grant
    Filed: January 20, 2022
    Date of Patent: April 22, 2025
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zhixiu Liang, Michael Sterling Jackson, Jiang Lu, Cheng-Hsiung Matthew Tsai, Tomoharu Matsushita, Zubin Huang