Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide methods to reduce the resistance of the work function layer of an electronic device, as well as using a low resistivity metal for filling the gate.

Abstract: In some embodiments, an integrated tool for opening an etch stop layer and performing metallization comprises a first chamber with a remote plasma source, a direct plasma source, and a thermal source configured to open the etch stop layer on a substrate, a second chamber of the integrated tool with dry etch processing configured to pre-clean surfaces exposed by opening the etch stop layer, a third chamber of the integrated tool configured to deposit a barrier layer on the substrate, a fourth chamber of the integrated tool configured to deposit a liner layer on the substrate, and at least one fifth chamber of the integrated tool configured to deposit metallization material on the substrate. The integrated tool may also include a vacuum transfer chamber.

Abstract: A method and apparatus for curing a substrate are described. The apparatus includes a curing apparatus with a casing and an ultraviolet (UV) radiation assembly coupled to the casing. The ultraviolet radiation assembly further includes a line UV radiation source. The casing includes an opening on one end. A substrate passes by the opening and is exposed to the UV radiation of the line UV radiation source. The curing apparatus further includes a purge assembly configured to continuously purge the process volume and the volume directly above the exposed portion of the substrate. The curing apparatus is configured to only cure a portion of the substrate at any one point in time, such that the curing apparatus is a scanning curing apparatus and includes a small process volume.

Abstract: The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about ? and 3.

Abstract: Generally, examples described herein relate to methods and semiconductor processing systems for anisotropically epitaxially growing a material on a silicon germanium (SiGe) surface. In an example, a surface of silicon germanium is formed on a substrate. Epitaxial silicon germanium is epitaxially grown on the surface of silicon germanium. A first growth rate of the epitaxial silicon germanium is in a first direction perpendicular to the surface of silicon germanium, and a second growth rate of the epitaxial silicon germanium is in a second direction perpendicular to the first direction. The first growth rate is at least 5 times greater than the second growth rate.

Abstract: A system and method for providing analysis of at least some of a plurality of un-patterned and patterned metrology targets during a fabrication process. A sample is arranged within a chamber of a semiconductor processing tool. The sample has the plurality of un-patterned and patterned metrology targets. A metrology tool integrated with the semiconductor processing tool can provide the analysis of at least some of the plurality of un-patterned and patterned metrology targets. One or more parameters associated with the plurality of patterned metrology targets are determined using optical metrology signals from the plurality of un-patterned metrology targets.

Abstract: Disclosed herein are a shaft for supporting a susceptor within an epitaxial growth apparatus, and an epitaxial growth apparatus having the same. In one example, the shaft for supporting a susceptor within an epitaxial growth apparatus includes a support column, a post, and a plurality of arms. The post is coupled with a support column. The post includes an infrared transmission reducing portion disposed proximately to the susceptor and having a lower transmissivity of infrared radiation than the support column. The plurality of arms extend radially from the support column and are configured to support the susceptor.

Abstract: A method and apparatus for substrate processing and a cluster tool including a transfer chamber assembly and a plurality of processing assemblies. The transfer chamber assembly and processing assemblies may include processing platforms for ALD, CVD, PVD, etch, cleaning, implanting, heating, annealing, and/or polishing processes. Processing chamber volumes are sealed from the transfer chamber volume using a support chuck on which a substrate is disposed thereon. The support chuck is raised to form an isolation seal between the processing chamber volume and the transfer chamber volume using a bellows assembly and a chuck sealing surface.

Abstract: The present disclosure generally relates to an epitaxial chamber for processing of semiconductor substrates. In one example, the epitaxial chamber has a chamber body assembly. The chamber body assembly includes a lower window and an upper window, wherein chamber body assembly, the lower window and the upper window enclose an internal volume. A susceptor assembly is disposed in the internal volume. The epitaxial chamber also has a plurality of temperature control elements. The plurality of temperature control elements include one or more of an upper lamp module, a lower lamp module, an upper heater, a lower heater, or a heated gas passage.

Abstract: Embodiments described herein relate semiconductor manufacturing and processing. More particularly, a processing systems for auto correcting misalignments of substrates in process chambers is provided. The processing system includes a process chamber having a substrate support disposed within a chamber volume of the process chamber. The substrate support includes a pocket for receiving a substrate, and a plurality of flow conduits extending between a top surface of the pocket and a bottom surface of the substrate support. An imaging device is coupled to the process chamber and configured to monitor a position of a substrate when loaded in the pocket of the substrate support.

Abstract: Embodiments of the present disclosure relate to methods for patterning a material layer on a substrate. The method includes forming a hard mask layer on a material layer disposed on a substrate. The material layer includes a plurality of first layers and a plurality of second layers alternately formed over the substrate. The method further includes performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas; performing an oxidation process to oxidize a sidewall of the features by supplying an oxidation gas; and performing a second etch process to etch the sidewall of the features formed in the material layer by suppling a second etching gas.

Abstract: Disclosed herein are approaches for forming an air grid of an image sensor. One method may include depositing a first fill material within a first plurality of trenches to form a plurality of grid structures, wherein the first plurality of trenches is formed through an oxide layer formed over a substrate, wherein the fill material is formed along a sidewall and a bottom surface of each trench of the plurality of trenches, and wherein a void is formed within the fill material. The method may further include forming a second plurality of trenches through the oxide layer and the first fill material.

Abstract: Methods of forming devices by selective deposition of silicon nitride (SIN) layer on a titanium nitride (TiN) layer and not on a high-? dielectric layer on the same substrate. The method including a pre-treatment process before selective deposition of the silicon nitride layer. The pre-treatment process comprising, in order, a first pre-treatment process to remove native oxides from the titanium nitride and passivate dangling bonds on the high-? dielectric layer, and a second pre-treatment process to fluorinate the high-? dielectric layer. After deposition, the fluorine can be removed from the high-? dielectric layer. The selective deposition method occurring without formation of an inhibitor layer on the high-? dielectric layer.

Abstract: Plasma treatment processes for selective deposition that are employed in the manufacture of electronic devices are described. Exemplary methods include selectively depositing a metal nitride layer on a first surface comprising one or more of silicon, silicon oxynitride, silicon nitride, tungsten, or titanium aluminum carbide, over a second surface comprising a metal oxide, such as, for example, one or more of silicon oxide, aluminum oxide, hafnium oxide, or zirconium oxide. The first surface and the second surface are treated with a plasma prior to selectively depositing the metal nitride layer.

Abstract: Plasma treatment processes employed in the manufacture of microelectronic devices are described. Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are also described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate; treating the substrate with a plasma to form a treated bottom surface; forming a blocking layer on the treated bottom surface by exposing the substrate to a blocking species; selectively depositing a barrier layer on the sidewalls; selectively depositing a metal liner on the barrier layer on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.

Abstract: A method may include forming, on a semiconductor device, a first layer may include a first material configured to prevent transmission of electromagnetic radiation (EMR) through at least the first layer. The method may include forming, on the first layer, a second layer may include a nano amorphous material configured to prevent transmission EMR through at least the first layer and the second layer. The method may include forming, on the second layer, a third layer may include a third material configured to prevent transmission of EMR through at least the first layer, the second layer, and the third layer, where the first material, the nano amorphous material, and the third material are configured to maximize the internal reflection of the EMR between the first, second, and third layers.

Abstract: Methods of forming devices by selective deposition of a third nitride material on a second nitride material over a first nitride material. An inhibitor is used to selectively passivate the first nitride material so that the third nitride material forms on the second nitride material. The inhibitor may be removed after deposition of the third nitride material.

Abstract: Exemplary substrate processing chambers may include a chamber body defining a processing region. The chamber body may include chamber walls. The chambers may include a showerhead disposed atop the chamber body. The chambers may include a susceptor disposed within the chamber body. The support plate may include a substrate receiving surface. A peripheral edge of the susceptor may define a plurality of notches that extend through a thickness of the support plate. The chambers may include a plurality of shadow frame supports extending from the chamber walls. At least some of the plurality of shadow frame supports may include protrusions that extend inward into an interior of the chamber body. Each of the protrusions may be vertically aligned with a respective one of the plurality of notches. The chambers may include a shadow frame that is positionable on the plurality of shadow frame supports.

Abstract: Embodiments of the disclosure relate to methods for bottom-up metal gapfill without substantial deposition outside of the feature. Additional embodiments provide a method of forming a metal material on the top surface of the substrate and the bottom of the feature before depositing the metal gapfill.