Patents Assigned to Applied Materials, Inc.
  • High critical temperature metal nitride layer with oxide or oxynitride seed layer
    Patent number: 12185643
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Grant
    Filed: March 1, 2023
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Nanostructures for optical devices
    Patent number: 12181736
    Abstract: Embodiments of metasurfaces having nanostructures with desired geometric profiles and configurations are provided in the present disclosure. In one embodiment, a metasurface includes a nanostructure formed on a substrate, wherein the nanostructure is cuboidal or cylindrical in shape. In another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein each of the nanostructures has a gap greater than 35 nm spaced apart from each other. In yet another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein the nanostructures are fabricated from at least one of TiO2, silicon nitride, or amorphous silicon, or GaN or aluminum zinc oxide or any material with refractive index greater than 1.8, and absorption coefficient smaller than 0.001, the substrate is transparent with absorption coefficient smaller than 0.001.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Tapashree Roy, Wayne McMillan, Rutger Meyer Timmerman Thijssen
  • Linear actuated 3 way spool valve with constant total flow
    Patent number: 12181054
    Abstract: A three-way valve is disclosed. The valve achieved constant flow rate as the valve transitions from 100% flow through the first path to 100% flow through the second path. The valve is linearly actuated, which allows a plurality of valves to be efficiently disposed in a manifold. The valve comprises a spool having two passageways therethrough which converge at the input. The spool is disposed in a housing. By linear movement of the spool within the housing, the amount of the incoming flow that passes through each of the two passageways can be controlled. In certain embodiments, the spool is in communication with an actuator to control its position within the housing. The three-way valve may be used as part of a manifold.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventor: Roger B. Fish
  • Methods of forming silicon carbide coated base substrates at multiple temperatures
    Patent number: 12180611
    Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.
    Type: Grant
    Filed: October 23, 2023
    Date of Patent: December 31, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yen Lin Leow, Xinning Luan, Hui Chen, Kirk Allen Fisher, Shawn Thomas
  • Chamber and methods of treating a substrate after exposure to radiation
    Patent number: 12181801
    Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.
    Type: Grant
    Filed: November 19, 2021
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Douglas A. Buchberger, Jr., Qiwei Liang, Hyunjun Kim, Ellie Y. Yieh
  • Baffle implementation for improving bottom purge gas flow uniformity
    Patent number: 12183553
    Abstract: The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Pathak, Kartik Shah, Amit Kumar Bansal, Tuan Anh Nguyen, Juan Carlos Rocha, David Blahnik
  • Apparatus and methods for controlling ion energy distribution
    Patent number: 12183557
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described.
    Type: Grant
    Filed: September 11, 2023
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Linying Cui, James Rogers
  • In-situ semiconductor processing chamber temperature apparatus
    Patent number: 12183605
    Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Andrew Nguyen, Yogananda Sarode, Xue Chang, Kartik Ramaswamy
  • Apparatus for temperature control in a substrate processing chamber
    Patent number: 12183559
    Abstract: An adapter for a deposition chamber includes an adapter body extending longitudinally about a central axis between an upper side and lower side opposite the upper side. The adapter body has a central opening about the central axis. The adapter body has a radially outer portion having a connection surface on the lower side and a radially inner portion having a coolant channel and a stepped surface on the lower side. At least a portion of the coolant channel is spaced radially inwardly from a radially inner end of the connection surface. At least the portion of the coolant channel is disposed longitudinally below the connection surface between the connection surface and the stepped surface.
    Type: Grant
    Filed: October 22, 2021
    Date of Patent: December 31, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vishwas Kumar Pandey, Colin John Dickinson, Dinkesh Huderi Somanna, Ala Moradian, Kartik Bhupendra Shah
  • High bandwidth architecture for centralized coherent control at the edge of processing tool
    Patent number: 12183548
    Abstract: Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.
    Type: Grant
    Filed: May 5, 2022
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventor: David Coumou
  • Resonator, linear accelerator, and ion implanter having dielectric-free resonator chamber
    Patent number: 12185451
    Abstract: An apparatus may include a resonator chamber, arranged in a vacuum enclosure; an RF electrode assembly, arranged within the vacuum enclosure; and a resonator coil, disposed within the resonator chamber, the resonator coil having a high voltage end, directly connected to at least one RF electrode of the RF electrode assembly.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: December 31, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Robert B. Vopat, Charles T. Carlson
  • DUAL FIELD EFFECT TRANSISTOR 4F2 CELL
    Publication number: 20240431093
    Abstract: The present technology is generally directed to vertical dynamic random-access memory (DRAM) cells and arrays, and methods of forming such cells and arrays, that contain a shared word line between two adjacent channels. Cells include a bit line arranged in a first horizontal direction, a first channel, a second channel, and a shared word line arranged in a second horizontal direction between the first channel and the second channel. Cells include where the first channel and the second channel extend in a vertical direction that is orthogonal to the first horizontal direction and the second horizontal direction, such that the bit line intersects with a source/drain region of the first channel and the second channel, and the shared word line intersects with a gate region of both the first channel and the second channel.
    Type: Application
    Filed: June 4, 2024
    Publication date: December 26, 2024
    Applicant: Applied Materials, Inc.
    Inventor: Fredrick Fishburn
  • REDUCED STRAIN AND STOP LAYER FOR Si/SiGe EPI STACKS
    Publication number: 20240429048
    Abstract: A semiconductor device and a method for manufacturing thereof. A substrate is provided. At least one silicon layer is formed on top of the substrate. At least one silicon-germanium layer is formed on top of at least one silicon layer. At least one silicon-germanium layer includes at least one n-type dopant. The semiconductor device having at least one silicon layer and at least one silicon-germanium layer is formed.
    Type: Application
    Filed: June 17, 2024
    Publication date: December 26, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Ruiying HAO, Thomas KIRSCHENHEITER, Arvind KUMAR, Mahendra PAKALA, Roya BAGHI, Balasubramanian PRANATHARTHIHARAN, Fredrick FISHBURN
  • INCREASED ETCH RATES OF SILICON-CONTAINING MATERIALS
    Publication number: 20240429062
    Abstract: Exemplary methods of semiconductor processing may include providing a hydrogen-containing precursor and a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed on a substrate support within the processing region. One or more layers of silicon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the hydrogen-containing precursor and the fluorine-containing precursor. The methods may include contacting one or more layers of silicon-containing material with plasma effluents of the hydrogen-containing precursor and the fluorine-containing precursor. The contacting may etch a portion of the one or more layers of silicon-containing material.
    Type: Application
    Filed: June 21, 2023
    Publication date: December 26, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Alok Ranjan, Anatoli Chlenov, Kenji Takeshita
  • MEASUREMENT OF LATERAL DOPANT CONCENTRATION AND DISTRIBUTION IN HIGH ASPECT RATIO TRENCH STRUCTURES
    Publication number: 20240429105
    Abstract: Disclosed herein are approaches for measuring lateral dopant concentration and distribution in high aspect radio trench structures. In one approach, a method may include providing a substrate including a plurality of alternating vertical structures and trenches, and removing a portion of the substrate to expose a sidewall of the first vertical structure of the plurality of structures. The method may further include directing a spectrometry beam into the sidewall of the first vertical structure to determine a dopant characteristic of the first vertical structure, wherein the spectrometry beam is delivered perpendicular to a plane defined by the sidewall of the first vertical structure.
    Type: Application
    Filed: June 20, 2023
    Publication date: December 26, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Dimitry KOUZMINOV, Vikram M. BHOSLE, Arun Ramaswamy SRIVATSA, Ming Hong YANG
  • HALOGEN-FREE MOLYBDENUM-CONTAINING PRECURSORS FOR DEPOSITION OF MOLYBDENUM
    Publication number: 20240425536
    Abstract: Exemplary methods of semiconductor processing, such as methods of depositing a molybdenum-containing material on a substrate, may include providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber in which the substrate is located. The molybdenum-containing precursor may include a molybdenum complex according to Compound I: R may be methyl or ethyl, R? may be methyl or ethyl, R? may be methyl, ethyl, or propyl, and n may be equal to 1 or 2. Contacting the substrate with the molybdenum-containing precursor may deposit the molybdenum-containing material on the substrate.
    Type: Application
    Filed: June 13, 2023
    Publication date: December 26, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Mark J. Saly, David Thompson
  • Carrier head membrane with regions of different roughness
    Patent number: 12172264
    Abstract: An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.
    Type: Grant
    Filed: July 12, 2023
    Date of Patent: December 24, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Young J. Paik, Ashish Bhatnagar, Kadthala Ramaya Narendrnath
  • Magnetron design for improved bottom coverage and uniformity
    Patent number: 12176191
    Abstract: A magnet assembly for a magnetron of a processing chamber includes a support member. A plurality of magnetic tracks is mounted to the support member. Each magnetic track includes a pair of magnetic poles. A partial magnetic track is mounted to the support member. The partial magnetic track includes a single unpaired magnetic pole. The partial magnetic track is mounted proximal to a center of rotation of the support member.
    Type: Grant
    Filed: June 26, 2023
    Date of Patent: December 24, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Cory Lafollett, Jie J. Zhang
  • Rotatable thermal processing chamber
    Patent number: 12176242
    Abstract: The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: December 24, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Wolfgang R. Aderhold, Dongming Iu
  • Support ring for an interlocking process kit for a substrate processing chamber
    Patent number: D1055006
    Type: Grant
    Filed: March 18, 2022
    Date of Patent: December 24, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Sahiti Nallagonda, Jonathan Simmons, Xinwei Huang, Peter Muraoka, Andreas Schmid