Patents Assigned to Applied Materials
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Patent number: 11562902Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.Type: GrantFiled: July 19, 2020Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Rui Cheng, Diwakar Kedlaya, Karthik Janakiraman, Gautam K. Hemani, Krishna Nittala, Alicia J. Lustgraaf, Zubin Huang, Brett Spaulding, Shashank Sharma, Kelvin Chan
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Patent number: 11562915Abstract: Methods, systems, and apparatus provide for optically monitoring individual lamps of substrate processing chambers. In one aspect, the individual lamps are monitored to determine if one or more lamps are in need of replacement. A method includes using one or more camera coupled to a borescope to capture a plurality of images of one or more lamps in a substrate processing chamber. The plurality of images is analyzed to identify a change of mean light pixel intensity in an image reference region associated with each lamp. The method includes generating an alert based on the detection of the mean light pixel intensity change.Type: GrantFiled: January 24, 2022Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Ji-Dih Hu, Chaitanya Anjaneyalu Prasad, Dongming Iu, Samuel C. Howells, Vilen K. Nestorov
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Patent number: 11562476Abstract: There is provided a system to examine a semiconductor specimen, the system comprising a processor and memory circuitry configured to obtain a training sample comprising an image of a semiconductor specimen and a design image based on design data, train a machine learning module, wherein the training includes minimizing a function representative of a difference between a simulated image generated by the machine learning module based on a given design image, and a corrected image corresponding to a given image after correction of pixel position of the given image in accordance with a given displacement matrix, wherein the minimizing includes optimizing parameters of the machine learning module and of the given displacement matrix, wherein the trained machine learning module is usable to generate a simulated image of a specimen based on a design image of the specimen.Type: GrantFiled: September 3, 2020Date of Patent: January 24, 2023Assignee: Applied Materials Israel Ltd.Inventor: Irad Peleg
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Patent number: 11562885Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.Type: GrantFiled: June 18, 2021Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Thomas Stacy, Jay T. Scheuer, Eric D. Hermanson, Bon-Woong Koo, Tseh-Jen Hsieh
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Patent number: 11560624Abstract: A precursor delivery system is described herein. Some embodiments provide a precursor delivery system capable of providing a uniform gas flow comprising precursor into a processing chamber for atomic layer deposition processes. Some embodiments of the precursor delivery system comprise a reservoir with an inlet line, an outlet line and an outlet valve. Further embodiments comprise a precursor source, an inlet valve, a heater, a processing chamber and a controller. Additional embodiments relate to methods for using a precursor delivery system.Type: GrantFiled: August 29, 2019Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventor: Joseph AuBuchon
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Patent number: 11560623Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.Type: GrantFiled: April 24, 2020Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Liangfa Hu, Prashant Kumar Kulshreshtha, Anjana M. Patel, Abdul Aziz Khaja, Viren Kalsekar, Vinay K. Prabhakar, Satya Teja Babu Thokachichu, Byung Seok Kwon, Ratsamee Limdulpaiboon, Kwangduk Douglas Lee, Ganesh Balasubramanian
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Patent number: 11562909Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.Type: GrantFiled: May 22, 2020Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Yu Lei, Xuesong Lu, Tae Hong Ha, Xianmin Tang, Andrew Nguyen, Tza-Jing Gung, Philip A. Kraus, Chung Nang Liu, Hui Sun, Yufei Hu
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Patent number: 11562914Abstract: Embodiments of the present disclosure generally relate to an apparatus for improving the film thickness on a substrate when using a heated substrate support. A cover plate to be placed over the top surface of a heated substrate support is disclosed. The cover plate includes a pocket formed in the middle thereof for the placement of a substrate. The cover plate may include a variety of features including a plurality of dimples, a plurality of radially disposed grooves, a plurality of annular grooves, lift pin holes, pin slots, and gas exhaust holes.Type: GrantFiled: April 12, 2021Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Muhammad M. Rasheed, Ilker Durukan
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Patent number: 11560913Abstract: Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.Type: GrantFiled: January 16, 2019Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Govinda Raj, Tom K. Cho, Hamid Mohiuddin, Ian Widlow
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Patent number: 11562890Abstract: A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.Type: GrantFiled: December 6, 2018Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Xiao Ming He, Jennifer Y. Sun, Xiaowei Wu, Laksheswar Kalita, Soonam Park
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Publication number: 20230016122Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.Type: ApplicationFiled: December 23, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Alexander K. Eidukonis, Hans-Joachim L. Gossmann, Dennis Rodier, Stanislav S. Todorov, Richard White, Wei Zhao, Wei Zou, Supakit Charnvanichborikarn
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Publication number: 20230019567Abstract: Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.Type: ApplicationFiled: July 19, 2021Publication date: January 19, 2023Applicant: Applied Materials Israel Ltd.Inventors: Alexander Mairov, Gal Bruner, Yehuda Zur
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Publication number: 20230015781Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor; pre-cleaning the substrate; depositing a titanium silicide (TiSi) layer on the n transistor and on the p transistor by plasma-enhanced chemical vapor deposition (PECVD); optionally depositing a first barrier layer on the titanium silicide (TiSi) layer and selectively removing the first barrier layer from the p transistor; selectively forming a molybdenum silicide (MoSi) layer on the titanium silicide (TiSi) layer on the n transistor and the p transistor; forming a second barrier layer on the molybdenum silicide (MoSi) layer; and annealing the semiconductor structure. The method may be performed in a processing chamber without breaking vacuum.Type: ApplicationFiled: July 15, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Ria Someshwar, Seshadri Ganguli, Lan Yu, Siddarth Krishnan, Srinivas Gandikota, Jacqueline S. Wrench, Yixiong Yang
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Publication number: 20230019912Abstract: A virtual build of an assembly may be performed by operating a virtual build tool inside of an active session of design software that is configured to design an assembly having multiple individual parts; importing characteristics of the assembly from a three-dimensional (3D) model of the assembly that is maintained by the design software; receiving an input of sequence numbers that indicate an assembly order for the individual parts; generating images for the individual parts as they are incrementally added to the assembly based on the sequence numbers; and generating a set of build instructions based on the sequence numbers and the images for the individual parts, where the set of build instructions illustrate how to physically manufacture the assembly.Type: ApplicationFiled: July 13, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventor: Pradeep Dayananda S
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Publication number: 20230013095Abstract: Techniques for adjusting the shape of an ion beam are described. Characteristics of a desired beam shape may be defined. The ion beam generator may include beam shaping elements associated with tunable parameters that can be set in combination with each other. A search space for the possible combinations is defined. A set of exploratory points in the search space are measured and used to interpolate a large number of interpolated points based on a regression model. Interpolated points that are associated with low confidence values may be measured. Based on the measured and interpolated points, clusters of tunable parameter combinations may be identified for evaluation. The clusters are evaluated for stability and sensitivity, and one of the clusters is selected based on the evaluation. The ion beam generator may be configured based on the selected cluster.Type: ApplicationFiled: July 14, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Richard Allen Sprenkle, Richard White, Eric Donald Wilson, Shane Conley, Ana Samolov, Nilay A. Pradhan
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Publication number: 20230015080Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.Type: ApplicationFiled: July 15, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Rohan Puligoru Reddy, Xiaolin C. Chen, Zhenjiang Cui, Anchuan Wang
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Publication number: 20230014586Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a doped semiconductor material between source regions and drain regions of the device. The method includes doping semiconductor material layers between source regions and drain regions of an electronic device.Type: ApplicationFiled: September 29, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Benjamin Colombeau, Hans-Joachim Gossmann
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Publication number: 20230017035Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.Type: ApplicationFiled: June 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Bencherki Mebarki, Thai Cheng Chua, Christian W. Valencia, Joung Joo Lee, Xianmin Tang, Xiao Chen
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Publication number: 20230017577Abstract: Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.Type: ApplicationFiled: September 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Ashutosh Agarwal, Sanjeev Baluja
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Publication number: 20230015613Abstract: Gas distribution assemblies and process chambers comprising gas distribution assemblies are described. The gas distribution assembly includes a gas distribution plate, a lid and a primary O-ring. The primary O-ring is positioned between a purge channel of a first contact surface of the gas distribution plate and a second contact surface. Methods of sealing a process chamber using the disclosed gas distribution assemblies are also described.Type: ApplicationFiled: September 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed