Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

Abstract: Certain embodiments provide a method and non-transitory computer readable medium having instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Abstract: An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

Abstract: A processing chamber may include a gas distribution member, a metal ring member below the gas distribution member, and an isolating assembly coupled with the metal ring member and isolating the metal ring member from the gas distribution member. The isolating assembly may include an outer isolating member coupled with the metal ring member. The outer isolating member may at least in part define a chamber wall. The isolating assembly may further include an inner isolating member coupled with the outer isolating member. The inner isolating member may be disposed radially inward from the metal ring member about an central axis of the processing chamber. The inner isolating member may define a plurality of openings configured to provide fluid access into a radial gap between the metal ring member and the inner isolating member.

Abstract: Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract: Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride, rhenium oxide, rhenium carbide). The exposures can be sequential or simultaneous. The rhenium-precursors are substantially free of halogen.

Abstract: A router may include input buffers that receive a packet being transmitted from a source to a destination, a state generator that determines a state for the packet, and a memory representing weights for actions corresponding to possible states. The memory may be configured to return an action corresponding to the state of the packet, where the action may indicate a next hop in the route between the source and the destination. The router may also include reward logic configured to generate the weights for the plurality of actions in the memory. The reward logic may receive a global reward corresponding to the route between the source and the destination, calculate a local reward corresponding to next hops available to the router; and combine the global reward and the local reward to generate the weights for the plurality of actions in the memory.

Abstract: A method of performing x-ray spectroscopy surface material analysis of a region of interest of a sample with an evaluation system that includes a scanning electron microscope (SEM) column, an x-ray detector and an x-ray polarizer, comprising: positioning a sample within a field of view of the scanning electron microscope; generating an electron beam having a landing energy about equal to an ionization energy of the materials within the region of interest of the sample; scanning the region of interest with the electron beam set to collide with the sample thereby generating x-rays emitted from near a surface of the sample, the x-rays including characteristic x-rays and Bremsstrahlung radiation; and detecting x-rays generated while the region of interest is scanned by the electron after the x-rays pass through the x-ray polarizer that blocks a higher percentage of the Bremsstrahlung radiation than the characteristic x-rays.

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation.

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

Abstract: Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500° C. in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100° C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200° C. in a first time period of less than or about 1 minute.

Abstract: Methods of making high-pixel-density LED structures are described. The methods may include forming a backplane substrate and a LED substrate. The backplane substrate and the LED substrate may be bonded together, and the bonded substrates may include an array of LED pixels. Each of the LED pixels may include a group of isolated subpixels. A quantum dot layer may be formed on at least one of the isolated subpixels in each of the LED pixels. The methods may further include repairing at least one defective LED pixel by forming a replacement quantum dot layer on a quantum-dot-layer-free subpixel in the defective LED pixel. The methods may also include forming a UV barrier layer on the array of LED pixels after the repairing of the at least one defective LED pixel.

Abstract: Described is a method of manufacturing a gate-all-around electronic device. The method includes forming a thermal oxide layer though an enhanced in situ steam generation process in combination with atomic layer deposition of a low-? layer. The thin thermal oxide layer passivates the interface between the silicon layer and the dielectric layer of the GAA. A passivation process after the deposition of the low-? layer reduces the bulk trap and enhances the breakdown performance of the GAA transistor.

Abstract: Disclosed are approaches for forming semiconductor device cavities using directional dielectric deposition. One method may include providing a plurality of semiconductor structures and a plurality of trenches of a semiconductor device, and forming a dielectric atop the plurality of semiconductor structures by delivering a dielectric material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the plurality of semiconductor structures. The dielectric may be further formed by delivering the dielectric material at a second non-zero angle of inclination relative to the normal extending perpendicular from the top surface of the plurality of semiconductor structures.

Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

Abstract: Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.

Abstract: An electrostatic chuck includes a ceramic body and adapter objects. The adapter objects collectively form a plurality of openings distributed over a bottom surface of the ceramic body at different distances from a center of a circle defined by the bottom surface of the ceramic body.