Patents Assigned to Applied Materials
  • METHOD TO IMPROVE WAFER EDGE UNIFORMITY
    Publication number: 20220375727
    Abstract: Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The semiconductor processing systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrates support may include a shaft coupled with the support plate. The semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of the support plate. An inner surface of the liner may include an emissivity texture.
    Type: Application
    Filed: May 19, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventor: Mingle Tong
  • SYSTEMS AND METHODS FOR MEDICAL PACKAGING
    Publication number: 20220375723
    Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.
    Type: Application
    Filed: May 10, 2022
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lance A. Scudder, Sukti Chatterjee, David Masayuki Ishikawa, Yuriy V. Melnik, Vibhas Singh
  • LOW IMPEDANCE CURRENT PATH FOR EDGE NON-UNIFORMITY TUNING
    Publication number: 20220375776
    Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.
    Type: Application
    Filed: May 19, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Madhu Santosh Kumar Mutyala, Saketh Pemmasani, Akshay Dhanakshirur, Mayur Govind Kulkarni, Hang Yu, Deenesh Padhi
  • FOURIER FILTERING OF SPECTRAL DATA FOR MEASURING LAYER THICKNESS DURING SUBSTRATE PROCESSING
    Publication number: 20220371152
    Abstract: Determining a thickness of a layer on a wafer during a semiconductor process may include executing the process on the layer on the wafer; monitoring the wafer during the process with an in-situ spectrographic monitoring system to generate spectral data reflected from the wafer; applying a bandpass filter operation to the spectral data to generate filtered spectral data, where the bandpass filter may be configured to pass a frequency range corresponding to the layer on the wafer; and matching the filtered spectral data to a reference filtered spectral data, where the reference filtered spectral data may have been filtered using the bandpass filter operation, and the reference filtered spectral data may be associated with a thickness of the layer.
    Type: Application
    Filed: May 20, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Benjamin Cherian, Dominic J. Benvegnu, Harry Q. Lee
  • Doping Techniques
    Publication number: 20220375753
    Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.
    Type: Application
    Filed: August 5, 2022
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wolfgang Aderhold, Yi-Chiau Huang, Wei Liu, Benjamin Colombeau, Abhilash Mayur
  • METHODS FOR DEPOSITING BLOCKING LAYERS ON CONDUCTIVE SURFACES
    Publication number: 20220372616
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.
    Type: Application
    Filed: May 7, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
  • Flowable CVD Film Defect Reduction
    Publication number: 20220375747
    Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.
    Type: Application
    Filed: May 20, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Wenhui Li, Praket P. Jha, Mandar B. Pandit, Man-Ping Cai, Jingmei Liang, Michael Wenyoung Tsiang
  • METHODS, MEDIUMS, AND SYSTEMS FOR IDENTIFYING A GENE IN A FLOURESCENCE IN-SITU HYBRIDIZATION EXPERIMENT
    Publication number: 20220375546
    Abstract: Exemplary embodiments provide methods, mediums, and systems for processing multiplexed image data from a fluorescence in-situ hybridization (FISH) experiment. According to exemplary embodiments, a convolutional neural network (CNN) may be applied to the image data to localize and identify hybridization spots in images corresponding to different sets of targeting probes. The CNN is configured in such a way that it is able to discriminate hybridization spots in situations that are difficult for conventional techniques. The CNN may be trained on a relatively small amount of data by exploiting the nature of the FISH codebook.
    Type: Application
    Filed: May 24, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Mike Jin-An Huang, Yun-Ching Chang, Dan Xie, Kok Hao Chen, Shijie Nigel Chou
  • Catalyst Enhanced Molybdenum Deposition And Gap Fill
    Publication number: 20220372617
    Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.
    Type: Application
    Filed: May 21, 2021
    Publication date: November 24, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Xi Cen, Kai Wu, Seshadri Ganguli, Xinming Zhang, Norman L. Tam, Abhilash Mayur
  • Multicolor self-aligned contact selective etch
    Patent number: 11508618
    Abstract: Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Yung-Chen Lin, Qingjun Zhou, Ying Zhang, Ho-yung David Hwang
  • Method of forming interconnect for semiconductor device
    Patent number: 11508617
    Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Hao Jiang, Chi Lu, He Ren, Chi-I Lang, Ho-yung David Hwang, Mehul Naik
  • Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films
    Patent number: 11508611
    Abstract: Implementations disclosed herein generally provide a lift pin that can improve the deposition rate and uniform film thickness above lift pin areas. In one implementation, the lift pin includes a first end coupling to a shaft, the first end having a pin head, and the pin head having a top surface, wherein the top surface is planar and flat, and a second end coupling to the shaft, the second end having a flared portion, wherein the flared portion has an outer surface extended along a direction that is at an angle of about 110° to about 140° with respect to a longitudinal axis of the lift pin.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Kalyanjit Ghosh, Mayur G. Kulkarni, Sanjeev Baluja, Praket P. Jha, Krishna Nittala
  • High voltage filter assembly
    Patent number: 11508554
    Abstract: Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Anurag Kumar Mishra, James Rogers, Leonid Dorf, Rajinder Dhindsa, Olivier Luere
  • Methods for forming films on substrates
    Patent number: 11505863
    Abstract: Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Alexander N. Lerner, Roey Shaviv, Prashanth Kothnur, Satish Radhakrishnan, Xiaozhou Che
  • Deuterium-containing films
    Patent number: 11508584
    Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Sean M. Seutter, Mun Kyu Park, Hien M Le, Chih-Chiang Chuang
  • Predictive filter for polishing pad wear rate monitoring
    Patent number: 11504821
    Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to hold a conditioning disk against the polishing surface, an in-situ polishing pad thickness monitoring system; and, a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad wear rate by applying a predictive filter to the signal.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Sivakumar Dhandapani, Jun Qian
  • Thermal repeatability and in-situ showerhead temperature monitoring
    Patent number: 11508558
    Abstract: Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a chill plate, a gas plate, and a gas distribution plate having a top surface and a bottom surface. A plurality of protruded features contacts the top surface of the gas distribution plate. A fastener and an energy storage structure is provided on the protruded features. The energy storage structure is compressed by the fastener and axially loads at least one of the protruded features to compress the chill plate, the gas plate and the gas distribution plate.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Timothy Joseph Franklin, Steven E. Babayan, Philip Allan Kraus
  • Selective silicon etch for gate all around transistors
    Patent number: 11508828
    Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.
    Type: Grant
    Filed: June 22, 2021
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Michael Stolfi, Myungsun Kim, Benjamin Colombeau, Sanjay Natarajan
  • Side storage pods, electronic device processing systems, and methods for operating the same
    Patent number: 11508593
    Abstract: Electronic device processing systems including an equipment front end module with at least one side storage pod are described. The side storage pod has a chamber including a top substrate holder and a bottom substrate holder. In some embodiments, an exhaust port is located at a midpoint between the top substrate holder and the bottom substrate holder. Methods and systems in accordance with these and other embodiments are also disclosed.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Paul B. Reuter, Dean C. Hruzek
  • Training spectrum generation for machine learning system for spectrographic monitoring
    Patent number: 11507824
    Abstract: A method of generating training spectra for training of a neural network includes generating a plurality of theoretically generated initial spectra from an optical model, sending the plurality of theoretically generated initial spectra to a feedforward neural network to generate a plurality of modified theoretically generated spectra, sending an output of the feedforward neural network and empirically collected spectra to a discriminatory convolutional neural network, determining that the discriminatory convolutional neural network does not discriminate between the modified theoretically generated spectra and empirically collected spectra, and thereafter, generating a plurality of training spectra from the feedforward neural network.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: November 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Cherian, Nicholas Wiswell, Jun Qian, Thomas H. Osterheld