Patents Assigned to Applied Materials
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Patent number: 10290459Abstract: Magnetron configurations that provide more efficient and/or more uniform cooling characteristics and methods for forming the magnetrons are provided. The magnetron includes one or more flow directing structures disposed between parallel cooling fins. The flow directing structures direct air flow across various surfaces of the cooling fins that otherwise would be obstructed by magnetron components, reducing the incidence and/or magnitude of hot spots on the cooling fins and/or on other magnetron components. The flow directing structures also adjust flow rates to improve cooling efficiency.Type: GrantFiled: October 17, 2018Date of Patent: May 14, 2019Assignee: Applied Materials, Inc.Inventors: Govinda Raj, Simon Yavelberg, Ramprakash Sankarakrishnan
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Patent number: 10290469Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.Type: GrantFiled: June 2, 2014Date of Patent: May 14, 2019Assignee: Applied Materials, Inc.Inventors: Valentin N. Todorow, Gary Leray, Michael D. Willwerth, Li-Sheng Chiang
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Patent number: 10289003Abstract: An image correction application relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed. The embodiments described herein relate to a software application platform, which corrects non-uniform image patterns on a substrate. The application platform method includes in a digital micromirror device (DMD) installed in an image projection system, the DMD having a plurality of columns, each column having a plurality of mirrors, disabling at least one entire column of the plurality of columns, exposing a first portion of the substrate to a first shot of electromagnetic radiation, exposing a second portion of the substrate to a second shot of electromagnetic radiation, and iteratively translating the substrate a step size and exposing another portion of the substrate to another shot of electromagnetic radiation until the substrate has been completely exposed to shots of electromagnetic radiation.Type: GrantFiled: August 31, 2016Date of Patent: May 14, 2019Assignee: Applied Materials, Inc.Inventors: Thomas L. Laidig, Joseph R. Johnson, Christopher Dennis Bencher
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Publication number: 20190139743Abstract: An exemplary faceplate may include a conductive plate defining a plurality of apertures. The faceplate may additionally include a plurality of inserts, and each one of the plurality of inserts may be disposed within one of the plurality of apertures. Each insert may define at least one channel through the insert to provide a flow path through the faceplate.Type: ApplicationFiled: December 31, 2018Publication date: May 9, 2019Applicant: Applied Materials, Inc.Inventors: Xinglong Chen, Dmitry Lubomirsky, Shankar Venkataraman
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Publication number: 20190139788Abstract: Aspects of the disclosure generally relate to methods of immobilizing die on a substrate. In one method one or more immobilization features are formed in a selected pattern on a substrate. A die is positioned in contact with the one or more immobilization features and the substrate. The one or more immobilization features are cured, and a mold layer is formed on top of the cured one or more immobilization features and the die so as to encapsulate the die.Type: ApplicationFiled: October 25, 2018Publication date: May 9, 2019Applicant: Applied Materials, Inc.Inventors: Boyi FU, Han-Wen CHEN, Kyuil CHO, Sivapackia GANAPATHIAPPAN, Roman GOUK, Steven VERHAVERBEKE, Nag B. PATIBANDLA, Yan ZHAO, Hou T. NG, Ankit VORA, Daihua ZHANG
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Patent number: 10283370Abstract: Exemplary methods for selectively removing silicon nitride may include flowing a fluorine-containing precursor, and oxygen-containing precursor and a silicon-containing precursor into a local plasma to form plasma effluents. The plasma effluents may remove silicon nitride at significantly higher etch rates compared to exposed silicon oxide on the substrate. The methods may also remove silicon nitride more rapidly that silicon carbide and silicon oxycarbide which broadens the utility of the present technology to semiconductor applications.Type: GrantFiled: March 1, 2018Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Onintza Ros Bengoechea, Nancy Fung
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Patent number: 10283321Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.Type: GrantFiled: October 3, 2011Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Jang-Gyoo Yang, Matthew L. Miller, Xinglong Chen, Kien N. Chuc, Qiwei Liang, Shankar Venkataraman, Dmitry Lubomirsky
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Patent number: 10283379Abstract: Apparatus and methods for heating and cooling a plurality of substrate wafers are provided. LED lamps are positioned against the back sides of a plurality of cold plates. In some embodiments, wafers are supported on a wafer lift which can move all wafers together. In some embodiments, wafers are supported on independent lift pins which can move individual wafers for heating and cooling. Some embodiments of the disclosure provide for decreased time between wafer switching in a processing chamber.Type: GrantFiled: January 20, 2016Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Jason M. Schaller, Robert Brent Vopat, Paul E. Pergande, Benjamin B. Riordon, David T. Blahnik, William T. Weaver
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Patent number: 10283320Abstract: A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (RF) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied RF signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.Type: GrantFiled: November 11, 2016Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Sathyendra K. Ghantasala, Vijayakumar C. Venugopal, Hyun-Ho Doh
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Patent number: 10283324Abstract: Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.Type: GrantFiled: October 24, 2017Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Zhijun Chen, Anchuan Wang, Jiayin Huang
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Patent number: 10283352Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.Type: GrantFiled: March 13, 2018Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Ben-Li Sheu, David Knapp, David Thompson
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Patent number: 10278501Abstract: A load lock door assembly with side actuation is disclosed. Load lock door assembly includes a load lock door and a door support assembly coupled thereto. Door support assembly includes one or more pivot members pivotable relative to one or more sides of the load lock body, a door support bracket coupled to the load lock door, one or more separator side actuators coupled between the door support bracket being actuatable to separate the load lock door from a sealing surface, and one or more pivot side actuator operable to pivot the load lock door above or below the load lock entry. Load lock apparatus with side actuation, systems including one or more load lock door assemblies with side actuation, and methods of operating load lock door assemblies are provided, as are numerous other aspects.Type: GrantFiled: April 17, 2015Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Eran Weiss, Travis Morey, Nir Merry, Paul B. Reuter, Izya Kremerman, Jeffrey C. Hudgens, Dean C. Hruzek
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Publication number: 20190130731Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.Type: ApplicationFiled: December 14, 2018Publication date: May 2, 2019Applicant: Applied Materials, Inc.Inventors: Vinayak Vishwanath Hassan, Majeed A. Foad, Cara Beasley, Ralf Hofmann
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Patent number: 10274270Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.Type: GrantFiled: October 8, 2012Date of Patent: April 30, 2019Assignee: Applied Materials, Inc.Inventors: Fernando Silveira, Brad L. Mays
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Patent number: 10273578Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.Type: GrantFiled: October 3, 2014Date of Patent: April 30, 2019Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Robert T. Trujillo, Kevin Griffin, Garry K. Kwong, Kallol Bera, Li-Qun Xia, Mandyam Sriram
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Patent number: 10276369Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.Type: GrantFiled: December 4, 2017Date of Patent: April 30, 2019Assignee: Applied Materials, Inc.Inventors: Jun Xue, Ludovic Godet, Martin A. Hilkene, Matthew D. Scotney-Castle
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Patent number: 10276354Abstract: Embodiments of the present invention include a focus ring segment and a focus ring assembly. In one embodiment, the focus ring segment includes an arc-shaped body having a lower ring segment, a middle ring segment, a top ring segment and a lip. The lower ring segment has a bottom surface, and the middle ring segment has a bottom surface, wherein the middle ring segment is connected to the lower ring segment at the middle ring segment bottom surface. The top ring segment has a bottom surface, wherein the top ring segment is connected to the middle ring segment at the top ring segment bottom surface. The lip extends horizontally above the middle ring segment, wherein the lip is sloped radially inwards towards a centerline of the focus ring segment. In another embodiment, the focus ring assembly includes at least a first ring segment and a second ring segment.Type: GrantFiled: September 23, 2013Date of Patent: April 30, 2019Assignee: Applied Materials, Inc.Inventors: Jared Ahmad Lee, Paul B. Reuter
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Patent number: 10276460Abstract: A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.Type: GrantFiled: January 11, 2017Date of Patent: April 30, 2019Assignee: Applied Materials, Inc.Inventors: Dominic J. Benvegnu, Jeffrey Drue David, Boguslaw A. Swedek
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Publication number: 20190122865Abstract: Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.Type: ApplicationFiled: October 24, 2017Publication date: April 25, 2019Applicant: Applied Materials, Inc.Inventors: Zhijun Chen, Anchuan Wang, Jiayin Huang
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Publication number: 20190122981Abstract: Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.Type: ApplicationFiled: October 22, 2018Publication date: April 25, 2019Applicant: Applied Materials, Inc.Inventors: Richard W. Plavidal, Albert Lan