Abstract: Systems and methods for electrochemically processing a substrate. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact element is a rotating member. In one embodiment, the contact element comprises a noble metal.

Abstract: An Intelligent Data Multiplexer (“IDM”) can be used to interface a plurality of host computers with a semiconductor manufacturing tool. In one embodiment, the IDM has a plurality of host-side ports configured to receive messages from each of the host computers interfaced with the semiconductor manufacturing tool. The IDM also includes a multiplexer configured to multiplex the messages received from the host-side ports. To process possible conflict messages from the host computers, the IDM has a conflict resolve module. The messages are then delivered from the IDM to the semiconductor manufacturing tool through a tool-side port used to connect the semiconductor manufacturing tool to the IDM.

Abstract: A method and apparatus for reducing or eliminating crosstalk between a plurality of electron beams is described. The plurality of electron beams may produce test areas on a large area substrate that are adjacent wherein secondary electrons from one test area may be detected in an adjacent test area. In one embodiment, the timing of a primary beam emission and detection of secondary electrons from that primary beam is controlled to eliminate or reduce the possibility of detection of secondary electrons from another primary beam.

Abstract: Embodiments of the invention provide a method and an apparatus for generating a gaseous chemical precursor for a processing system. In one embodiment, an apparatus for generating the gaseous chemical precursor used in a vapor deposition processing system is provided and includes a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister, wherein the inlet tube contains an outlet positioned to direct a gas flow away from the outlet port and towards the sidewall of the canister.

Abstract: The present invention relates to systems and methods for controlled combustion of gaseous pollutants while reducing and removing deposition of unwanted reaction products from within the treatment systems. The systems employ a two-stage thermal reactor having an upper thermal reactor including at least one inlet for mixing a gaseous waste stream with oxidants and combustible fuels for thermal combustion within the upper thermal reactor. The upper thermal reactor further includes a double wall structure having an outer exterior wall and an interior porous wall that defines an interior space for holding a fluid and ejecting same, in a pulsating mode, through the interior porous wall into the upper thermal reactor to reduce deposition of the reaction products on the interior of the upper reactor chamber.

Abstract: In certain embodiments, an apparatus for providing a fixed impedance transformation network for driving a plasma chamber includes a pre-match network adapted to couple between an Active RF match network and a plasma chamber load associated with the plasma chamber. The pre-match network includes (1) a first capacitive element; (2) an inductive element connected in parallel with the first capacitive element to form a parallel circuit that presents a stepped-up impedance to an output of the Active RF match network such that a voltage required to drive the plasma chamber load is reduced; and (3) a second capacitive element coupled to the parallel circuit and adapted to couple to the plasma chamber load. The second capacitive element reduces or cancels at least in part a reactance corresponding to an inductance associated with the plasma chamber load. Numerous other aspects are provided.

Abstract: A strip coating system includes a first pulley carrying a flexible metal or Al substrate wound up on the first pulley. A second, take-up, pulley is provided for taking up the coated substrate. The coating process is a continuous coating process, during which the first pulley and the second pulley are rotated to move the substrate continuously past a coating tool for depositing coating particles on a surface of the substrate. After having passed the coating section with a speed v, the substrate carrying a coating layer on the surface thereof passes an infrared spectroscopic measurement device for measuring the layer thickness of the coating layer. Feedback controls are provided to control one or more process parameters of the coating tool responsive to the measurement of the thickness of the coating layer detected by the measurement tool. Thus, an in situ online measurement of the thickness of the coating layer may be implemented.

Abstract: A method and apparatus for welding polymer components by forming a groove along a surface of a polymer part to be welded, placing a conductive member in the groove, heating the conductive member to a first temperature for a first period, allowing the parts to cool for a second period to form a weldment, heating the conductive member to a second temperature for a third period, and removing the conductive member from the weldment.

Abstract: A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve device performance. Germanium may be deposited or implanted into the gate structure in order to facilitate stress control.

Abstract: Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other.

Abstract: Embodiments of an apparatus and method of monitoring and controlling a large area substrate processing chamber are provided. Multiple types of metrology tools can be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. Several number of a particular type of metrology tools can also be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. The metrology tools can be installed in a metrology chamber, a process chamber, a transfer chamber, or a loadlock.

Abstract: Systems, methods and apparatus for manufacturing color filters for flat panel displays are provided that include an inkjet printing system integrated with a light transmittance measurement system. The inkjet printing system includes a stage for supporting and moving a substrate past inkjet print heads adapted to deposit ink in pixel wells on the substrate. The light transmittance measurement system includes a sensor and a light source disposed on opposite sides of the substrate and adapted to determine the thickness of the ink deposited on the substrate. The light source is adapted to move with the sensor to allow different pixel wells containing deposited ink to be measured, and the stage includes at least one optical path to allow light from the light source to pass through the deposited ink to the sensor.

Abstract: An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.

Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

Abstract: A method of fabricating a semiconductor device includes providing a region having doped silicon region on a substrate, and forming a silicon germanium material adjacent to the region on the substrate. A stressed silicon nitride layer is formed over at least a portion of the doped silicon region on the substrate. The silicon germanium layer and stressed silicon nitride layer induce a stress in the doped silicon region of the substrate. In one version, the semiconductor device has a transistor with source and drain regions having the silicon germanium material, and the doped silicon region forms a channel that is configured to conduct charge between the source and drain regions. The stressed silicon nitride layer is formed over at least a portion of the channel, and can be a tensile or compressively stressed layer according the desired device characteristics.

Abstract: The invention refers to a coating device for the deposition of thin films on large area substrates comprising a process chamber, an electrode arrangement within the process chamber (2) which is adapted for generating a plasma adjacent to the electrode arrangement (4) at at least two opposing sides of the electrode arrangement, and at least two substrate holders for supporting at least two substrates (5,6) in substrate positions on opposing sides of the electrode arrangement, the electrode arrangement being located between the substrate positions and the substrates facing in the substrate positions the at least two plasma generated at the electrode arrangement, wherein the electrode arrangement comprises at least two cathodes arranged in a plane, the cathodes being able to generate a plasma at at least two sides of each cathode.

Abstract: A sputter coating installation 1 comprises a vacuum chamber having an interior space 3?. The interior space 3? of the vacuum chamber is defined by chamber walls 3. According to the present invention, an array of target units 9 is arranged in line inside the vacuum coating chamber. Particularly, the target units 9 are arranged tiltable relative to the vacuum chamber and relative to a transport path t of a substrate 2. The target units 9 are cathode units or magnetron units and comprise a target and a housing. The housing is attached to the target and defines an interior space of the target unit. Within the interior space of the target units a number of components are arranged, e.g. a combination of a magnet yoke and a magnet system, a magnet yoke drive, a cooling system (arranged near the target), an electric current supply for supplying energy for the sputter process, etc.

Abstract: In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.

Abstract: A magnet encapsulated within a canister formed from two cans into a laminated structure particularly useful in plasma processing reactors. Each can includes an end wall and a cylindrical sidewall. One can additionally includes an annular lip that slidably fits outside the sidewall of the other can with a small gap therebetween. The magnet is inserted into the two cans together with a flowable and curable adhesive such as epoxy. The cans are slid together and compressed to cause the adhesive to flow between the magnet and the two cans and between the lip of one can and the sidewall of the other. The adhesive is cured to bond the magnet to the cans and to bond the cans together and to also hermetically seal the structure. The cans may be deep drawn from non-magnetic stainless steel with wall thicknesses of less than 0.064 mm.

Abstract: A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.