Abstract: A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 ? or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.

Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.

Abstract: One embodiment of the present invention is a process tool optimization system that includes: (a) a data mining engine that analyzes end-of-line yield data to identify one or more process tools associated with low yield; and (b) in response to output from the analysis, analyzes process tool data from the one or more process tools to identify one or more process tool parameters associated with the low yield.

Abstract: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.

Abstract: A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.

Abstract: An imaging system for inspection of a sample includes an illumination module, which irradiates a surface of the sample with pulsed optical radiation. A mechanical scanner translates at least one of the sample and part of the imaging system so as to scan an area irradiated by the pulsed optical radiation over the surface in order to irradiate successive, partially overlapping frames on the surface by respective successive pulses of the pulsed radiation. A collection module collects the optical radiation scattered from the surface so as to capture a sequence of images of the irradiated frames. A system controller varies a configuration of the imaging system in alternation between at least first and second different optical configurations in synchronization with the pulsed optical radiation.

Abstract: Improved systems, apparatus, and methods for detecting positions of moving stages and accurately compensating position error during operation (in “real time”) are provided. For some embodiments, rather than rely on two dimensional position measurements, measurements in at least three dimensions may be taken allowing compensation for pitch and roll and, therefore, more accurate position measurements. Further, by including a measurement of a beam column, compensation for movement of the beam may be performed.

Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).

Abstract: A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Abstract: A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrate state meets a control criterion. The substrate state may define the thickness and the qualities of the films on the substrate, the critical dimensions of the different layers on the substrate. The reflectance data is analyzed using a multi-variant analysis technique, such as principle component analysis. In addition to analyzing substrate state prior to processing, substrate reflectance could also be collected in a processing chamber during processing to be analyzed with reference reflectance data to further determine if the substrate state and/or the substrate processing are meeting a control criterion.

Abstract: An automated optical inspection system, comprising at least one camera having a field of view; and at least one image scanning module comprising a plurality of objective modules arranged to have fields of view covering a portion of an article during inspection, and an image selection mirror mechanism, such as a pentaprism movable to sequentially select and transfer images of the fields of view from the objective modules to the at least one camera, and a beam splitter operative to simultaneously direct illumination from at least one illumination source to a portion of the article and to direct an image of the portion of the article to at least one camera, wherein the beam splitter is operative to pivot about at least one axis, thereby to create motion of the image of the article within the field of view of the camera. The objective modules may be arranged in a pair of back-to-back arcs each served by and partially encircling its own optical head.

Abstract: Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.

Abstract: A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer by layer growth on a wafer. A first reactant is introduced with a percentage of a carrier gas. After a first time interval, the first reactant flow is reduced while the carrier gas flow is increased so as to maintain an approximately constant total gas flow. When the first reactant flow reaches a minimal, predetermined amount, a second reactant flow is initiated and increased while the carrier gas flow is decreased so as to continue a constant total gas flow. The method alternatively includes introducing a substance that enhances reactant adsorption and chemisorption, either as a first applied gas that reacts with the surface or as an added ligand to the reactant. Still further alternatives include a periodic rapid thermo anneal for improving film properties, parallel wafer processing and a reactant reservoir.

Abstract: Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.

Abstract: A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises a first chelating agent, a second chelating agent, a first corrosion inhibitor, a second corrosion inhibitor, a suppressor, a solvent, and an inorganic acid based electrolyte to provide a pH between about 3 and about 10.

Abstract: Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. Polishing compositions are provided for removing at least a barrier material from a substrate surface by a chemical mechanical polishing process or by an electrochemical mechanical polishing process. The polishing compositions used in barrier removal may further be used after a process for electrochemical mechanical planarization process of a conductive material. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization type defects.

Abstract: A method and apparatus to shield a cryogenic pump in a physical vapor deposition chamber comprising a physical vapor deposition chamber, a gasket in thermal contact with the physical vapor deposition chamber, at least one post in contact with the gasket, a radiation shield connected at the top of the post, and at least one intermediate ring in contact with the post. A method and apparatus for a radiation shield for a cryogenic pump comprising a cryogenic pump with a region upstream from the cryogenic pump, a gasket in thermal contact the region upstream from the cryogenic pump, at least one post in contact with the gasket, a radiation shield connected at the top of the post, and at least one intermediate ring in contact with the post.

Abstract: The present invention relates to fluorinated silicate glass (FSG) with low dielectric constant and improved gap-fill characteristics. In the present method, a fluorinated silicon source, an optional fluorine source, an optional carbon source, a hydrogen source, and an oxygenator are used as the reactant gases. Inert or carrier gas(es) may also be used. In accordance with the present invention, the reactant gas mixture does not comprise a silane compound having the general formula SixHy, wherein x has a range of 1 to 2, y has a range of 4 to 6. The material deposited is thus referred to herein alternatively as “SixFy-only FSG” or “SixFy-only fluorinated oxide” (“SOFO”).

Abstract: Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the film stack in a multi-step process including a first step of etching the quartz layer utilizing a first process gas comprising at least one fluorocarbon process gas and a chlorine-containing process gas; and a second step of etching the quartz layer utilizing a second process gas comprising at least one fluorocarbon process gas.