Patents Assigned to Applied Materials
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Publication number: 20080145038Abstract: A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.Type: ApplicationFiled: December 15, 2006Publication date: June 19, 2008Applicant: Applied Materials, Inc.Inventors: JOSEPH M. RANISH, Bruce E. Adams, Aaron M. Hunter
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Publication number: 20080142483Abstract: A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.Type: ApplicationFiled: November 29, 2007Publication date: June 19, 2008Applicant: Applied Materials, Inc.Inventors: Zhong Qiang Hua, Rionard Purnawan, Jason Thomas Bloking, Anchuan Wang, Young S. Lee, Ellie Y. Yieh
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Publication number: 20080142208Abstract: A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.Type: ApplicationFiled: December 15, 2006Publication date: June 19, 2008Applicant: Applied Materials, Inc.Inventors: JOSEPH M. RANISH, Bruce E. Adams, Aaron M. Hunter
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Publication number: 20080141939Abstract: A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooling coil may also be captured in the encapsulant between the electromagnetic coils. The structure may additionally include water fittings, locating pins, through tubes for chamber bolts, and lifting brackets.Type: ApplicationFiled: December 13, 2006Publication date: June 19, 2008Applicant: Applied Materials, IncInventors: Andrew Gillard, Anthony Vesci, Keith A. Miller
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Patent number: 7388213Abstract: We have developed a method of registration of a particle beam to internal alignment targets present within photoresist areas which are to be imaged. The method does not affect the photoresist, so the quality of pattern produced in the resist after imaging is not affected. The method used for registration of the particle beam to internal alignment targets also can be used to align a pattern in real time, while the pattern is being created, with the internal alignment targets. The real time alignment during creation of a pattern image in the photoresist can be used to correct for drift, or thermal expansion, or gravitational sag, by way of example.Type: GrantFiled: September 23, 2005Date of Patent: June 17, 2008Assignee: Applied Materials, Inc.Inventor: Jeffrey S. Sullivan
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Publication number: 20080138987Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.Type: ApplicationFiled: February 19, 2008Publication date: June 12, 2008Applicant: Applied Materials, Inc.Inventors: Raymond John Donohoe, Krishna Vepa, Paul V. Miller, Ronald Rayandayan, Hong Wang
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Publication number: 20080138974Abstract: A nickel silicon alloy barrier layer formed between a metal bonding pad on an integrated circuit and a tin-based solder ball, for example, a lead-free solder. The nickel silicon alloy contains at least 2 wt % silicon and preferably less than 20 wt %. An adhesion layer may be formed between the barrier layer and the bonding pad. For copper metallization, the adhesion layer may contain titanium or tantalum; for aluminum metallization, it may be aluminum. The nickel silicon alloy may be deposited by magnetron sputtering. Commercially available NiS4.5% sputter targets have provided a superior under-bump metallization (UBM) with lead-free tin solder bumps. Dopants other than silicon/may be used to reduce the magnetic permeability and provide other advantages of the invention.Type: ApplicationFiled: November 27, 2007Publication date: June 12, 2008Applicant: Applied Materials, Inc.Inventors: Yanping Li, Jriyan Jerry Chen, Lisa Yang
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Patent number: 7385205Abstract: The invention provides a method and apparatus for automatically aligning a beam of charged particles with an aperture. Thereby, a defocusing is introduced and a signal calculated based on an image shift is applied to a deflection unit. Further, a method for correction of astigmatism is provided. Thereby, the sharpness is evaluated for a set of frames generated whilst varying the signals to a stigmator.Type: GrantFiled: March 22, 2007Date of Patent: June 10, 2008Assignee: Applied Materials Israel LimitedInventor: Asher Pearl
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Patent number: 7384534Abstract: Electrolyte compositions and methods for planarizing a surface of a substrate using the electrolyte compositions are provided. In one aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, two or more corrosion inhibitors, and one or more pH adjusting agents. In another aspect, an electrolyte composition includes one or more chelating agents, one or more corrosion inhibitors, one or more pH adjusting agents, and one or more electrically resistive additives.Type: GrantFiled: March 7, 2005Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Lizhong Sun, Feng Q. Liu, Siew Neo, Stan Tsai, Liang-Yuh Chen
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Patent number: 7384867Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: GrantFiled: August 18, 2005Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Patent number: 7383702Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: GrantFiled: June 5, 2006Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Publication number: 20080132087Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.Type: ApplicationFiled: January 11, 2008Publication date: June 5, 2008Applicant: Applied Materials, Inc.Inventors: Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
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Patent number: 7381978Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: February 3, 2005Date of Patent: June 3, 2008Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Patent number: 7381116Abstract: A polishing apparatus that employs a polishing media retention arrangement to prevent slippage or wrinkles in the polishing media during polishing. The polishing media is drawn against a support surface by a vacuum applied between the polishing media and the support surface. Also, a porous layer may be placed between the polishing media and the support surface to form dimples in the polishing media upon the application of vacuum. An alternative arrangement draws the polishing media against a carrier and the substrate to be polished.Type: GrantFiled: March 30, 2006Date of Patent: June 3, 2008Assignee: Applied Materials, Inc.Inventors: Phillip R. Sommer, Paul Butterfield
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Patent number: 7381052Abstract: An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.Type: GrantFiled: June 2, 2006Date of Patent: June 3, 2008Assignee: Applied Materials, Inc.Inventors: Jun Zhao, David Quach, Timothy Weidman, Rick J. Roberts, Farhad Moghadam, Dan Maydan
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Patent number: 7381926Abstract: A batch processing chamber comprising a top plate having at least one opening, and sidewalls, wherein the sidewalls and the top plate define a process volume. At least one removable heater is generally disposed in the process volume, wherein the at least one removable heater can be inserted or removed from the at least one opening of the top plate. In one embodiment, the at least one removable heater is resistive heater constructed in ceramic. In another embodiment, at least one heater container is disposed in the process volume via the at least one opening of the top plate and the at least one heater may operate in atmospheric conditions.Type: GrantFiled: September 9, 2005Date of Patent: June 3, 2008Assignee: Applied Materials, Inc.Inventors: Joseph Yudovsky, Robert C. Cook
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Patent number: 7381639Abstract: We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.Type: GrantFiled: June 9, 2006Date of Patent: June 3, 2008Assignee: Applied Materials, Inc.Inventors: Tony Chiang, Gongda Yao, Peijun Ding, Fusen E. Chen, Barry L. Chin, Gene Y. Kohara, Zheng Xu, Hong Zhang
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Publication number: 20080121177Abstract: A gas distributor for use in a semiconductor process chamber comprises a body. The body includes a first channel formed within the body and adapted to pass a first fluid from a first fluid supply line through the first channel to a first opening. A second channel is formed within the body and adapted to pass a second fluid from a second fluid supply line through the second channel to a second opening. The first and second openings are arranged to mix the fluids outside the body after the fluids pass through the openings.Type: ApplicationFiled: November 28, 2006Publication date: May 29, 2008Applicant: Applied Materials, Inc.Inventors: Won B. Bang, Srivivas D. Nemani, Phong Pham, Ellie Y. Yieh
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Publication number: 20080121345Abstract: A method and apparatus for confining a plasma are provided herein. In one embodiment, an apparatus for confining a plasma includes a substrate support and a magnetic field forming device for forming a magnetic field proximate a boundary between a first region disposed at least above the substrate support, where a plasma is to be formed, and a second region, where the plasma is to be selectively restricted. The magnetic field has b-field components perpendicular to a direction of desired plasma confinement that selectively restrict movement of charged species of the plasma from the first region to the second region dependent upon the process conditions used to form the plasma.Type: ApplicationFiled: November 28, 2006Publication date: May 29, 2008Applicant: Applied Materials, Inc.Inventors: Steven C. Shannon, Masao Drexel, James A. Stinnett, Ying Rui, Ying Xiao, Roger A. Lindley, Imad Yousif
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Publication number: 20080124817Abstract: Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.Type: ApplicationFiled: August 23, 2006Publication date: May 29, 2008Applicant: Applied Materials, Inc.Inventors: David Bour, Sandeep Nijhawan, Lori D. Washington, Jacob W. Smith