Patents Assigned to Applied Materials
  • Conductive polishing article for electrochemical mechanical polishing
    Patent number: 7374644
    Abstract: Embodiments of a ball assembly are provided. In one embodiment, a ball assembly includes a housing, a ball, a conductive adapter and a contact element. The housing has an annular seat extending into a first end of an interior passage. The conductive adapter is coupled to a second end of the housing. The contact element electrically couples the adapter and the ball with is retained in the housing between seat and the adapter.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Paul D. Butterfield, Liang-Yuh Chen, Yongqi Hu, Antoine P. Manens, Rashid Mavliev, Stan D. Tsai, Feng Q. Liu, Ralph Wadensweiler
  • Method and apparatus for removing a halogen-containing residue
    Patent number: 7374696
    Abstract: The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Mark N. Kawaguchi, James S. Papanu, Scott Williams, Matthew Fenton Davis
  • Method and apparatus for dechucking a substrate
    Patent number: 7375946
    Abstract: A method and apparatus for dechucking a substrate is provided. In one embodiment, a processing chamber is provided that includes a grounded chamber body having a substrate support assembly disposed in an interior volume. A dechucking circuit selectively couples the substrate support assembly to ground or to a power source. In another embodiment of the invention, a method for dechucking a substrate includes the steps of completing a plasma process on a substrate disposed on a grounded substrate support assembly, disconnecting the substrate support assembly from ground, and applying a dechucking voltage to the substrate support assembly.
    Type: Grant
    Filed: August 16, 2004
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: John M. White, Wendell T. Blonigan
  • Method and apparatus for chemical mechanical polishing of semiconductor substrates
    Patent number: 7375023
    Abstract: Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Stan D. Tsai, Liang-Yuh Chen, Lizhong Sun, Shijian Li, Feng Q. Liu, Rashid Mavliev, Ratson Morad, Daniel A. Carl
  • Method of retaining a substrate during a substrate transferring process
    Patent number: 7374393
    Abstract: A method and apparatus for processing substrates using a multi-chamber processing system, or cluster tool, that has an increased system throughput, increased system reliability, improved device yield performance, a more repeatable wafer processing history (or wafer history), and a reduced footprint. The various embodiments of the cluster tool may utilize two or more robots that are configured in a parallel processing configuration to transfer substrates between the various processing chambers retained in the processing racks so that a desired processing sequence can be performed on the substrates. In one aspect, the parallel processing configuration contains two or more robot assemblies that are adapted to move in a vertical and horizontal directions, to access the various processing chambers retained in generally adjacently positioned processing racks.
    Type: Grant
    Filed: April 5, 2006
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Mike Rice, Jeffrey Hudgens, Charles Carlson, William Tyler Weaver, Robert Lowrance, Eric Englhardt, Dean C. Hruzek, Mario David Silvetti, Michael Kuchar, Kirk Van Katwyk, Van Hoskins, Vinay Shah
  • Stress measurement and stress balance in films
    Patent number: 7374960
    Abstract: Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.
    Type: Grant
    Filed: August 23, 2006
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: David Bour, Sandeep Nijhawan, Lori D. Washington, Jacob W. Smith
  • Method and apparatus for testing function of active microstructural elements and method for producing microstructural elements using the test method
    Patent number: 7375505
    Abstract: A method and an apparatus for testing the function of a plurality of microstructural elements by irradiation with particle radiation. All of the microstructural elements detected as malfunctioning are listed in a first error list in a first test sequence. The microstructural elements listed in the first error list are tested once more in at least one further test sequence and at least the result of the test sequence last carried out is evaluated to establish the overall test result. The first test sequence is designed so that, if possible, all of the microstructural elements which are actually malfunctioning are detected. The invention further relates to a method for producing microstructural elements which are constructed as a plurality on a substrate and are tested according to the above test method.
    Type: Grant
    Filed: April 4, 2002
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Matthias Brunner, Ralf Schmid
  • Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
    Patent number: 7374636
    Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
    Type: Grant
    Filed: July 26, 2002
    Date of Patent: May 20, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu, Qi Li, Mahmoud Dahimene
  • Motorized chamber lid
    Patent number: 7371285
    Abstract: A semiconductor processing chamber having a motorized lid is provided. In one embodiment, the semiconductor processing chamber generally includes a chamber body having sidewalls and a bottom defining an interior volume. A lid assembly is coupled to the chamber body and is movable between a first position that encloses the interior volume and a second position. A hinge assembly thereto is coupled between the lid assembly and the chamber body. A motor is coupled to the hinge assembly to facilitate moving the lid assembly between the first position and the second position.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael Rosenstein, Alex Shenderovich, Marc O. Schweitzer, Ilya Lavitsky, Alvin Lau, Michael Feltsman
  • Substrate holder which is self-adjusting for substrate deformation
    Patent number: 7372690
    Abstract: A wafer chuck is designed to allow the substrate to thermally deform during charged particle beam lithography. The wafer chuck includes a compliant layer disposed over an chuck body. During lithography processing the wafer is electrostatically held in contact with a flexible compliant layer and the wafer is exposed to the charged particle beam resulting in thermal deformation of the wafer. The compliant layer deforms with the substrate and allows the wafer to deform in a predictable manner.
    Type: Grant
    Filed: February 10, 2005
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Stephen Moffatt
  • Methods and apparatus for determining a position of a substrate relative to a support stage
    Patent number: 7372250
    Abstract: A sensing system includes a plurality of probes arranged in a spaced relation around a stage that is adapted to support a substrate. Each probe includes a detection portion adapted to move from a known starting position toward an edge of the substrate that is supported by the stage; detect the edge of the substrate while the substrate is supported by the stage; generate a detection signal following said detection; and stop moving toward the edge of the substrate following said detection. A controller may determine an edge position of the substrate relative to the stage based on the known starting position of each detection portion and based on the detection signal generated by each detection portion. Numerous other aspects are provided.
    Type: Grant
    Filed: February 19, 2004
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Kurita, Emanuel Beer, Edgar Kehrberg, Matthias Brunner
  • Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
    Patent number: 7371427
    Abstract: Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Meiyee Shek, Kegang Huang, Bok Hoen Kim, Hichem M'saad, Thomas Nowak
  • Electron beam source having an extraction electrode provided with a magnetic disk element
    Patent number: 7372195
    Abstract: An electron beam source for use in an electron gun. The electron beam source includes an emitter terminating in a tip. The emitter is configured to generate an electron beam. The electron beam source further includes a suppressor electrode laterally surrounding the emitter such that the tip of the emitter protrudes through the suppressor electrode and an extractor electrode disposed adjacent the tip of the emitter. The extractor electrode comprises a magnetic disk whose magnetic field is aligned with an axis of the electron beam.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Steven T. Coyle, Michael R. Scheinfein, William J. Devore
  • Process chamber component having electroplated yttrium containing coating
    Patent number: 7371467
    Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating is resistant to corrosion in the plasma, and can have a compositional gradient of yttrium-containing species through a thickness of the coating. In one embodiment, the coating is formed by electroplating a layer comprising yttrium onto the surface, and then electroplating a second layer onto the first layer, and annealing the first and second layers. The second layer can comprise aluminum or zirconium. In another embodiment, the coating is formed by electroplating a layer comprising a mixture of aluminum and yttrium onto the surface and annealing the layer.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Nianci Han, Li Xu, Hong Shih, Yang Zhang, Danny Lu, Jennifer Y. Sun
  • Multi-step process for etching photomasks
    Patent number: 7371485
    Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.
    Type: Grant
    Filed: October 31, 2005
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Cynthia B. Brooks, Melisa J. Buie, Brigitte C. Stoehr
  • Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
    Patent number: 7368392
    Abstract: A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ultra-thin (about 10 to 20 Angstroms) silicon dioxide gate dielectric, and a polysilicon upper contact. In a further embodiment, the gate electrode is selectively notched to a pre-determined width.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: May 6, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Jinhan Choi, Shashank Deshmukh, Sang Yi, Kyeong-Tae Lee
  • Conditioner disk for use in chemical mechanical polishing
    Patent number: 7367872
    Abstract: A conditioner disk for use on a polish pad in chemical mechanical polishing process includes a base structure a plurality of curved blades supported by the base structure. The blades radiate outwardly from a center region of the base structure and curve in a common direction.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: May 6, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Timothy J. Donohue
  • Method and apparatus which enable high resolution particle beam profile measurement
    Patent number: 7368731
    Abstract: The PSF for a metrology array for high resolution particle beam profile measurement has been improved by improving five major elements of the metrology array. While improvement in each of the five elements provides and improved PSF, a combination of all five of the elements provides an unexpected synergistic effect. The individual elements include the use of a plurality of slots as apertures; use of a high-Z material in forming the array; employing sidewalls on the slotted opening apertures where the sidewall forms an angle with a horizontal surface at the base of the array which is at least 75°; employing a knife edge where the upper corner radius ranges from about 1 nm to about 5 nm; and providing a surface finish at the upper corner of each knife edge which is less than 5 nm RMS.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: May 6, 2008
    Assignee: Applied Materials, Inc.
    Inventor: Jeffrey S. Sullivan
  • Methods and apparatus for transporting substrate carriers
    Patent number: 7367446
    Abstract: According to a first aspect, a first conveyor system is provided that is adapted to deliver substrate carriers within a semiconductor device manufacturing facility. The first conveyor system includes a ribbon that forms a closed loop along at least a portion of the semiconductor device manufacturing facility. The ribbon is adapted to (1) be flexible in a horizontal plane and rigid in a vertical plane; and (2) transport a plurality of substrate carriers within at least a portion of the semiconductor device manufacturing facility. Numerous other aspects are provided, as are systems, methods and computer program products in accordance with these and other aspects.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: May 6, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Michael R. Rice, Robert B. Lowrance, Martin R. Elliott, Jeffrey C. Hudgens, Eric A. Englhardt
  • Substrate support lift pin
    Patent number: D568914
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: May 13, 2008
    Assignee: Applied Materials, Inc.
    Inventors: David T. Or, Keith K. Koai, Hiroyuki Takahama, Takahiro Ito, Koji Ota, Hiroshi Sato