Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
Type:
Grant
Filed:
January 17, 2006
Date of Patent:
February 19, 2008
Assignee:
Applied Materials, Inc
Inventors:
Hung Chih Chen, John M. White, Shijian Li, Fred C. Redeker, Ramin Emami
Abstract: A method, system and medium of automation performed on a semiconductor manufacturing tool. The method creates a designed set of experiments for the tool and runs the created set of experiments. The method also collects data resulting from running the experiments and creates a model based on the collected data. The created model is used in automatically controlling the tool.
Abstract: A battery powered sensing device for diagnosing a processing system and method for using the same are provided. The support platform generally has physical characteristics, such as size, profile height, mass, flexibility and/or strength, substantially similar to those of the substrates that are to be processed in the processing system, so the sensor device can be transferred through the processing system in a manner similar to the manner in which production substrates are transferred through the processing system.
Abstract: The present invention generally provides an apparatus and a method for inspecting a substrate in a substrate processing system. In one aspect, a voltage or current source is used in conjunction with a power density receiving device, such as a spectrometer, to inspect a substrate for various noise spectrum signatures. In one embodiment, spectral data collected from a given substrate is used to generate a current or voltage spectral signature. This spectral signature may then be compared to a reference spectral density signature to predict reliability of a feature structure of a substrate in processing and feedback to the substrate processing system for substrate processing control. Embodiments of the invention further include computer-readable media containing instructions for controlling the substrate processing system, and computer program products having computer-readable program code embodied therein for controlling the substrate processing system and inspecting defects on semiconductor features.
Abstract: A carrier head for chemical mechanical polishing that has a base, a mounting assembly connected to the base having a surface for contacting a substrate, and a retaining ring secured to the base. The retaining ring can include perfluoroalkoxy, polyetherketoneketone, polybenzimidazole, a semi-crystalline thermoplastic polyester, or a long molecular chain molecule produced from poly-paraphenylene terephthalamide.
Type:
Application
Filed:
August 2, 2007
Publication date:
February 14, 2008
Applicant:
Applied Materials, Inc.
Inventors:
Doyle Bennett, Andrew Nagengast, Hung Chen
Abstract: Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.
Type:
Grant
Filed:
June 24, 2005
Date of Patent:
February 12, 2008
Assignees:
Applied Materials, Inc., Matsushita Electric Industrial Co., Ltd.
Inventors:
Manoj Vellaikal, Hemant P. Mungekar, Young S. Lee, Yasutoshi Okuno, Hiroshi Yuasa
Abstract: A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
Type:
Grant
Filed:
December 28, 2006
Date of Patent:
February 12, 2008
Assignee:
Applied Materials, Inc.
Inventors:
Matthew F. Davis, Lei Lian, Yasuhiro Uo, Michael D. Willwerth, Andrei Ivanovich Netchitaliouk
Abstract: A method for performing process end point detection in a semiconductor substrate processing system by monitoring for an increase in a flow of backside gas above a predetermined limit.
Type:
Grant
Filed:
December 10, 2004
Date of Patent:
February 12, 2008
Assignee:
Applied Materials, Inc.
Inventors:
Aaron D. Gustafson, Daniel J. Baer, Leonard D. Moravek, John P. Kettley, Jr.
Abstract: A substrate table and method for supporting and transferring a substrate are provided. The substrate table includes a segmented stage having an upper surface for supporting a substrate, and an end effector. The end effector includes two or more spaced apart fingers and an upper surface for supporting a substrate. The end effector is at least partially disposed and moveable within the segmented stage such that the fingers of the end effector and the segmented stage interdigitate to occupy the same horizontal plane. The segmented stage is adapted to raise and lower about the end effector.
Type:
Grant
Filed:
December 21, 2004
Date of Patent:
February 12, 2008
Assignee:
Applied Materials, Inc.
Inventors:
Shinichi Kurita, Emanuel Beer, Hung T. Nguyen, Benjamin Johnston, Fayez E. Abboud
Abstract: A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.
Type:
Grant
Filed:
October 30, 2006
Date of Patent:
February 12, 2008
Assignee:
Applied Materials, Israel, Ltd.
Inventors:
Avishai Barotv, Gadi Greenberg, Chaim Braude
Abstract: A method for generating a simulated aerial image of a mask projected by an optical system includes determining a coherence characteristic of the optical system. A coherent decomposition of the optical system is computed based on the coherence characteristic. The decomposition includes a series of expansion functions having angular and radial components that are expressed as explicit functions. The expansion functions are convolved with a transmission function of the mask in order to generate the simulated aerial image.
Abstract: The concentration of various contaminants in a plasma can be monitored during processing of a substrate such as a silicon wafer, in order to prevent an unacceptable amount of contamination from being deposited on the substrate. The radiation emitted from the plasma through a window in the processing chamber during processing can be detected and measured by a tool such as an optical emission spectrograph (OES) and the relative intensity of peaks in the spectrum corresponding to various contaminants can be analyzed in order to determine contaminant concentration. In one embodiment, the concentration of aluminum in a plasma is monitored during a plasma chemical vapor deposition (CVD) process in order to ensure that the amount of aluminum in the produced device is lower than a maximum threshold amount.
Type:
Application
Filed:
July 25, 2006
Publication date:
February 7, 2008
Applicant:
Applied Materials, Inc.
Inventors:
Soonam Park, Farhan Ahmad, Hemant P. Mungekar, Young S. Lee
Abstract: A semiconductor device including: a quantum well having photon emission energy level, the quantum well having at least one active layer and two barrier layers, one disposed above the active layer and one disposed below the active layer; and injection regions for injecting electrons into the quantum well, wherein the electrons are cool electrons with respect to the active layer of the quantum well.
Abstract: A system and method for inspecting an article, the system includes a spatial filter that is shaped such as to direct output beams towards predefined locations and an optical beam directing entity, for directing the multiple output beams toward multiple detector arrays. The method includes spatially filtering multiple input light beams to provide substantially aberration free output light beams; and directing the multiple output beams by an optical beam directing entity, toward multiple detector arrays.
Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
Type:
Grant
Filed:
November 15, 2004
Date of Patent:
February 5, 2008
Assignee:
Applied Materials, Inc.
Inventors:
Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim
Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace.
Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
Abstract: The invention provides an inkjet printing apparatus that includes at least one inkjet print head adapted to dispense fluids onto a substrate and at least one delivery aperture adapted to direct a gas toward the substrate. The apparatus may also include at least one recovery aperture adapted to draw materials away from the substrate and evaporate liquids from the surface of the substrate.
Type:
Application
Filed:
July 26, 2006
Publication date:
January 31, 2008
Applicant:
Applied Materials, Inc.
Inventors:
Quanyuan Shang, Fan Cheung Sze, Josef Hoog, Lizhong Sun, John M. White
Abstract: An ink composition is provided for display device manufacturing via ink jetting. The ink includes (1) a first solvent having a first evaporation rate of about 0 to about 0.353; and (2) a second solvent having a second, different evaporation rate of about 0 to about 0.353 combined with the first solvent. Numerous other aspects are provided.
Abstract: Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.