Patents Assigned to Applied Materials
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Publication number: 20070276530Abstract: Methods and apparatus are provided for managing movement of small lots between processing tools within an electronic device manufacturing facility. In some embodiments, a number of priority lots to be processed is determined and an equivalent number of carrier storage locations are reserved at a substrate loading station of a processing tool. The number of reserved carrier storage locations are made available either by processing and advancing occupying non-priority lots and/or moving unprocessed occupying non-priority lots from the substrate loading station. Priority lots are then transferred to the reserved carrier storage locations. Other embodiments are provided.Type: ApplicationFiled: August 14, 2007Publication date: November 29, 2007Applicant: Applied Materials, Inc.Inventors: David Duffin, Daniel Jessop, Michael Teferra, Amitabh Puri, Glade Warner
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Publication number: 20070272327Abstract: The performance of photolithography chemical dispense apparatus is improved by placing the chemical filter before the dispense pump and providing a separate pressure control for the filter. This approach allows the system to utilize both an optimal dispense rate and an optimal filtration rate. A chemical source can have a first pressure source applied, and a second pressure source applied where necessary to control the filtration rate. The pressures can be optimized during calibration, and optimal pressures can be maintained using pressure sensors that monitor the pressures. A controller can model the behavior of at least the dispense pressure during a dispense cycle and can calculate an adjustment function to be applied to the dispense pump during a subsequent dispense cycle in order to optimize the dispense pressure (and hence flow rate) during each cycle.Type: ApplicationFiled: April 27, 2006Publication date: November 29, 2007Applicant: Applied Materials, Inc.Inventor: Y. Lin
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Publication number: 20070272996Abstract: A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.Type: ApplicationFiled: April 13, 2007Publication date: November 29, 2007Applicant: Applied Materials, Inc.Inventors: Francisco Leon, Lawrence West
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Publication number: 20070272356Abstract: A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer surface providing a substrate receiving surface, a perimeter portion connecting the central portion to the base, and at least one flap extending from an inner surface of the central portion. The flap divides a volume between the flexible membrane and the base into a plurality of chambers, and the flap includes a laterally extending first section and an angled second section extending beneath the first section and connecting the laterally extending first section to the central portion.Type: ApplicationFiled: August 10, 2007Publication date: November 29, 2007Applicant: Applied Materials, Inc.Inventors: Hung Chen, Jeonghoon Oh, Tsz-Sin Siu, Thomas Brezoczky, Steven Zuniga
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Patent number: 7301263Abstract: A multiple electron beam source comprises a photon source to generate a photon beam, a lens to focus the photon beam, a photocathode having a photon receiving surface and an electron emitting surface, and an array of electron transmission gates spaced apart from the electron emitting surface of the photocathode by a distance dg. In one version, the multiple electron beam source comprises a photocathode stage assembly to move the photocathode relative to the array of electron transmission gates. In one version, the multiple electron beam source also comprises a plasmon-generating photon transmission plate comprising an array of photon transmission apertures and exterior surfaces capable of supporting plasmons.Type: GrantFiled: May 28, 2004Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Juan R. Maldonado, Steven T. Coyle
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Patent number: 7300261Abstract: A gas turbo pump assembly for connection to a port of a vacuum chamber and having high throughput with low vibration. The assembly comprises a turbo pump and a vibration damper. The pump has a pump body with an external surface and a center axis defining a first axial end and a second axial end of the pump. The pump also has a pump inlet port, the inlet port being coupled to the vacuum chamber port disposed at the first axial end of the pump, and an exit port disposed proximate the second axial end of the pump. The assembly vibration damper is structured to enclose a substantial portion of the pump in a nested arrangement.Type: GrantFiled: July 18, 2003Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Hagay Cafri, Eyal Kotik, Eitan Pinhasi, Igor (Krayvitz) Krivts
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Patent number: 7301160Abstract: The invention relates to methods of controlling the effect of ions of an ionisable source gas that can react with interior surfaces of an arc chamber, by introducing ions of a displacement gas into the arc chamber, where the displacement gas ions are more chemically reactive with the material of the interior surfaces than the ions of the source gas. The source gas ions may typically be oxygen ions and the displacement gas ions are then typically fluorine ions where the interior surfaces comprise tungsten. The fluorine ions may, by way of example, be sourced from fluorine, silicon tetrafluoride or nitrogen trifluoride.Type: GrantFiled: June 1, 2004Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventor: Peter Michael Banks
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Patent number: 7300597Abstract: A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.Type: GrantFiled: September 27, 2006Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Hee Yeop Chae, Jeremiah T. P. Pender, Gerardo A. Delgadino, Xiaoye Zhao, Yan Ye
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Patent number: 7300829Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.Type: GrantFiled: June 2, 2003Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Mark Hsiao, Dong-Kil Yim, Takako Takehara, Quanyuan Shang, William R. Harshbarger, Woong-Kwon Kim, Duk-Chul Yun, Youn-Gyung Chang
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Patent number: 7299831Abstract: In a first aspect, an automatic door opener is provided that includes (1) a platform adapted to support a substrate carrier; (2) a door opening mechanism adapted to open a door of the substrate carrier while the substrate carrier is supported by the platform; and (3) a tunnel. The tunnel is adapted to extend from an opening in a clean room wall toward the platform and at least partially surround the platform. The tunnel is further adapted to direct a flow of air from the clean room wall toward the platform and out of the tunnel. Numerous other aspects are provided.Type: GrantFiled: August 23, 2005Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Martin R. Elliott, Michael R. Rice, Robert B. Lowrance, Jeffrey C. Hudgens, Eric A. Englhardt
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Patent number: 7301619Abstract: A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.Type: GrantFiled: June 16, 2006Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Peter G. Borden, Ji-Ping Li
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Patent number: 7296673Abstract: Embodiments of a vacuum conveyor system are provided herein. In one embodiment, apparatus for conveying a substrate includes a vacuum sleeve and a plurality of rollers disposed within the vacuum sleeve for supporting and transporting the substrate thereupon. The plurality of rollers is adapted to simultaneously support the substrate thereupon at a plurality of elevations. A leading edge of the substrate is supported at an elevation above an adjacent one of the plurality of rollers in the direction of travel.Type: GrantFiled: July 7, 2005Date of Patent: November 20, 2007Assignee: Applied Materials, Inc.Inventors: Wendell T. Blonigan, John M. White
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Patent number: 7297047Abstract: A method and apparatus for the delivery of slurry solution comprising an ultrasonic flow meter positioned between a fluid preparation manifold and a slurry delivery arm, and a shutoff valve positioned between a proportional valve and the slurry delivery arm. Also, a method and apparatus for the delivery of slurry solution including an ultrasonic flow meter positioned to receive fluid from a fluid preparation manifold, a proportional valve and stepper motor in communication with the flow meter, and a reverse flow restrictor in communication with the proportional valve and a slurry delivery arm.Type: GrantFiled: December 1, 2005Date of Patent: November 20, 2007Assignee: Applied Materials, Inc.Inventors: Songjae Lee, Ho Seon Shin, Donald J. K. Olgado
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Patent number: 7297965Abstract: Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.Type: GrantFiled: April 28, 2005Date of Patent: November 20, 2007Assignee: Applied Materials, Israel, Ltd.Inventors: Eitan Kidron, Dror Shemesh
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Patent number: 7297247Abstract: A method of fabricating a sputtering target for sputter depositing material onto a substrate in a sputtering chamber is described. In one embodiment of the method, a preform having a surface is formed and a layer of sputtering material is electroplated onto the surface of the preform to form the target. The method can be applied to form a sputtering target having a non-planar surface.Type: GrantFiled: May 6, 2003Date of Patent: November 20, 2007Assignee: Applied Materials, Inc.Inventors: Anantha K. Subramani, Anthony Vesci, Scott Dickerson
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Patent number: 7297376Abstract: A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.Type: GrantFiled: July 7, 2006Date of Patent: November 20, 2007Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Kelvin Chan, Nagarajan Rajagopalan, Josephine Ju-Hwei Chang Liu, Sang H. Ahn, Yi Zheng, Sang In Yi, Vu Ngoc Tran Nguyen, Alexandros T. Demos
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Patent number: 7298941Abstract: An optoelectronic circuit including: an IC chip made up of a substrate in which an optical waveguide and a mirror have been fabricated, the substrate having a first lens formed thereon, wherein the mirror is aligned with the optical waveguide and the first lens is aligned with the mirror to form an optical path connecting the first lens, the mirror, and the optical waveguide; and an optical coupler including a second lens, the optical coupler affixed to the substrate and positioned to align the second lens with the first lens so as to couple an optical signal into or out of the optical waveguide within the IC chip.Type: GrantFiled: February 14, 2006Date of Patent: November 20, 2007Assignee: Applied Materials, Inc.Inventors: Edward L. Palen, Gregory L. Wojcik, Lawrence C. West
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Publication number: 20070261818Abstract: A heat exchanger is disclosed having multiple temperature outputs. The heat exchanger may have a body and a heating system. The body may have a first end, a second end, a first side, and a second side. The first end may oppose the second end and the first side may oppose the second side. The body may define a plurality of fluid channels, a plurality of input ports, a plurality of output ports, and each of the fluid channels may be accessible by an input port on either the side of the body and an output port on the opposed side of the body. The heating system may be configured to deliver thermal energy to the first end of the body. The body may be configured to allow the thermal energy to substantially flow from the first end to the second end, thereby producing a temperature gradient across the body.Type: ApplicationFiled: April 27, 2006Publication date: November 15, 2007Applicant: Applied Materials, Inc.Inventor: Harald Herchen
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Patent number: 7294574Abstract: An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.Type: GrantFiled: August 9, 2004Date of Patent: November 13, 2007Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Fuhong Zhang, Hsien-Lung Yang, Michael A. Miller, Jianming Fu, Jick M. Yu, Zheng Xu, Fusen Chen
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Patent number: 7294563Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.Type: GrantFiled: December 1, 2004Date of Patent: November 13, 2007Assignee: Applied Materials, Inc.Inventors: Amir Al-Bayati, Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Biagio Gallo, Andrew Nguyen