Patents Assigned to Applied Materials
  • Patent number: 6231674
    Abstract: This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer.
    Type: Grant
    Filed: January 11, 2000
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Aihua Chen, Karl A. Littau, Dashun S. Zhou
  • Patent number: 6231725
    Abstract: An apparatus for sputtering material onto a workpiece, composed of: a chamber; a first target disposed in the chamber for sputtering material onto the workpiece; a holder for holding the workpiece in the chamber; a plasma generation area between the target and the holder; a coil for inductively coupling energy into the plasma generation area for generating and sustaining a plasma in the plasma generation area; and a second target disposed in the chamber below the first target and above the coil for sputtering material onto the workpiece.
    Type: Grant
    Filed: August 4, 1998
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Jaim Nulman, Zheng Xu
  • Patent number: 6232236
    Abstract: An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
    Type: Grant
    Filed: August 3, 1999
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Hongqing Shan, Claes Bjorkman, Paul Luscher, Richard Mett, Michael Welch
  • Patent number: 6232234
    Abstract: A short period of low power plasma-activated process is imposed after film-forming to remove residual chemical compound. This method includes flowing one or more carrier gases with one or more reaction gases into the chamber, reducing plasma power to react the residual chemical compound with the reaction gases, and pumping to evacuate reaction product from the reaction chamber. The reduced plasma can be achieved by increasing gap spacing at a constant power or gradient power. Alternatively, it can be obtained by keeping the same spacing as the main process with a small power source.
    Type: Grant
    Filed: March 24, 1999
    Date of Patent: May 15, 2001
    Assignees: Applied Materials, Inc., Vanguard International Semiconductor Corporation
    Inventors: Liang-Gi Yao, Shih-Chieh Su, Hung-Chuan Chen, Yuh-Min Lin
  • Patent number: 6232665
    Abstract: A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper.
    Type: Grant
    Filed: June 8, 1999
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Gongda Yao, Peijun Ding, Zheng Xu, Hoa Kieu
  • Patent number: 6231716
    Abstract: An apparatus for processing substrates includes a chamber, a substrate transfer element for transferring a substrate to and from the chamber, and a substrate support for receiving and holding a substrate within the chamber. The apparatus also includes multiple pins positioned and configured to be received by respective holes in the chamber bottom and moveable between a retracted position and an extended position. A pin actuation system is provided for moving the pins between the retracted position and the extended position. The pin actuation system controls the velocity at which the pins move and varies the speed of the pins by accelerating or decelerating at particular points during the pin cycle. A reduction in the cycle time is facilitated by accelerating the lift pins to relatively high speeds and then slowing the pins down prior to their arrival at locations where the substrate or wafer may be damaged.
    Type: Grant
    Filed: November 9, 1998
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Anthony White, Eugene Smargiassi
  • Patent number: 6230652
    Abstract: An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.
    Type: Grant
    Filed: January 11, 2000
    Date of Patent: May 15, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Tsutomu Tanaka, Mukul Kelkar, Kevin Fairbairn, Hari Ponnekanti, David Cheung
  • Publication number: 20010000898
    Abstract: The invention is embodied in an antenna for radiating RF power supplied by an RF source into a vacuum chamber, the antenna including plural concentrically spiral conductors, each having a first end located in a first common region and a second end located in a second common region, and each being wound about a common axis passing through both regions, the regions being concentric with the axis, the conductors being substantially the same length, substantially the same shape, and substantially evenly spaced with respect to each other about the common axis.
    Type: Application
    Filed: December 20, 2000
    Publication date: May 10, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Arthur H. Sato
  • Patent number: 6227141
    Abstract: Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In a preferred implementation, a PECVD reactor includes a processing chamber having a first electrode therewithin. A second electrode is disposed within the chamber and is configured for supporting at least one semiconductor workpiece for processing. A first RF power source delivers RF power of a first frequency to the first electrode. A second RF power source delivers RF power of a second frequency to the second electrode. Preferably the first and second frequencies are different from one another, and even more preferably, the first frequency is greater than the second frequency. The preferred reactor includes a thermocouple which provides temperature information relative to one of the electrodes.
    Type: Grant
    Filed: June 19, 2000
    Date of Patent: May 8, 2001
    Assignees: Micron Technology, Inc., Applied Materials, Inc.
    Inventors: Sujit Sharan, Gurtej S. Sandhu, Paul Smith
  • Patent number: 6228233
    Abstract: The present invention provides a bladder assembly 130 for use in an electroplating cell 100. The bladder assembly 130 comprises a mounting plate 132, a bladder 136, and an annular manifold 146. One or more inlets 142 are formed in the mounting plate 146 and are coupled to a fluid source 138. The manifold 146 is adapted to be received in a recess 140 formed in the lower face of the mounting plate 132 and secures the bladder 136 thereto. Outlets 154 formed in the manifold 146 communicate with the inlets 142 to route a fluid from the fluid source 138 into the bladder 136 to inflate the same. A substrate 121 disposed on a contact ring 114 opposite the bladder 136 is thereby selectively biased toward a seating surface of the contact ring 114. A pumping system 159 coupled at the backside of the substrate 121 provides a pressure or vacuum condition.
    Type: Grant
    Filed: November 30, 1998
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Jayant Lakshmikanthan, Joe Stevens
  • Patent number: 6228208
    Abstract: A lid assembly for a narrow-gap magnetically enhanced reactive ion etch (MERIE) chamber. The lid assembly has a lid and a liner. Both pieces are substantially U-shaped and interfit such that the interface between them extends outside the chamber. A blocker plate is situated in a recess between a lower surface of the lid and an upper surface of the liner. The blocker plate is concave in shape so that a downward bow of the lid does not exert a stress on the blocker plate. The novel lid assembly is more leak resistant, requires less cleaning time and is cheaper than a design that utilizes a moving pedestal.
    Type: Grant
    Filed: August 12, 1998
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Thorsten Lill, Alan Ouye
  • Patent number: 6228235
    Abstract: A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.
    Type: Grant
    Filed: March 2, 1999
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Avi Tepman, James van Gogh
  • Patent number: 6228781
    Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Laxman Murugesh, Maciek Orczyk, Pravin Narawankar, Jianmin Qiao, Turgut Sahin
  • Patent number: 6228236
    Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.
    Type: Grant
    Filed: October 22, 1999
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Michael Rosenstein, Jianming Fu, Leif Eric Delaurentis, James van Gogh, Alan Liu
  • Patent number: 6228186
    Abstract: Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.
    Type: Grant
    Filed: October 14, 1999
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Vikram Pavate, Keith J. Hansen, Glen Mori, Murali Narasimhan, Seshadri Ramaswami, Jaim Nulman
  • Patent number: 6228229
    Abstract: A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ivo J. Raaijmakers, Bradley O. Stimson, John Forster
  • Patent number: 6227585
    Abstract: Substrate handling apparatus and methods are described. In one aspect, the substrate handling apparatus includes a clamping member having an extended condition wherein substrate movement relative to the transfer arm is substantially restricted and a retracted condition wherein substrate movement relative to the transfer arm is substantially free. The substrate handling apparatus further includes a sense mechanism (e.g., a vacuum sensor) constructed to determine whether a substrate is properly positioned on the support arm and to trigger the mode of operation of the clamping member between extended and retracted conditions. The sense mechanism also provides information relating to the operating condition of the clamping member.
    Type: Grant
    Filed: December 4, 1998
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Boris Govzman, Konstantin Volodarsky, Leon Volfovski
  • Publication number: 20010000586
    Abstract: Chemical mechanical polishing of a silicon layer, such as a polycrystalline silicon, is improved by initially chemical mechanically polishing the silicon layer with an oxide-polishing slurry. Then the silicon layer is chemical mechanically polished with a silicon-polishing slurry until the substrate is planarized.
    Type: Application
    Filed: November 29, 2000
    Publication date: May 3, 2001
    Applicant: Applied Materials, Inc.,
    Inventors: Shijian Li, Thomas H. Osterheld, Fred C. Redeker
  • Publication number: 20010000775
    Abstract: A carrier head for a chemical mechanical polishing apparatus. The carrier head includes a housing, a base, a loading mechanism, a gimbal mechanism, and a substrate backing assembly. The substrate backing assembly includes a support structure positioned below the base, a substantially horizontal, annular flexure connecting the support structure to the base, and a flexible membrane connected to the support structure. The flexible membrane has a mounting surface for a substrate, and extends beneath the base to define a chamber.
    Type: Application
    Filed: December 5, 2000
    Publication date: May 3, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Steven M. Zuniga, Manoocher Birang, Hung Chen, Sen-Hou Ko
  • Publication number: 20010000604
    Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.
    Type: Application
    Filed: December 20, 2000
    Publication date: May 3, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Arthur H. Sato