Abstract: A photoacid compound having the following general structure: R—O(CF2)nSO3X wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C1-C12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF2)pO)m(CF2)q— wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.

Abstract: A heat resistant negative working photosensitive composition that comprises

Abstract: An end-capped polybenzoxazole precursor having acid labile functional groups, positive working photosensitive compositions thereof and use of the compositions for producing heat resistant relief images on substrates.

Abstract: A positive photosensitive resin composition comprising:

Abstract: A heat resistant negative working photosensitive composition that comprises

Abstract: A positive photosensitive resin composition of at least one uncapped polybenzoxazole precursor polymer, at least one capped polybenzoxazole precursor polymer, at least one photosensitive agent and at least one solvent, use of such compositions to pattern an image on a substrate and the resulting relied patterned substrates and electronic parts therefrom.

Abstract: An edge bead remover composition that includes at least one ketone selected from the group consisting of: 1

Abstract: The present invention is directed to a thermally curable polymer composition, and a photolithographic substrate coated therewith, the composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator. The thermally curable polymer composition may be dissolved in a solvent and used as an undercoat layer in deep UV lithography.

Abstract: A synthetic process comprising the following steps: providing a reaction mixture comprising: an ethylenically unsaturated anhydride monomer, at least one ethylenically unsaturated non-anhydride monomer, a free radical initiator, and an alkyl substituted THF solvent having the general structure of formula 1: where R1, R2, R3, and R4 are independently chosen from the group hydrogen and C1-C4 linear or branched alkyl with the proviso that at least one of R1, R2, R3, and R4 is not H; polymerizing the reaction mixture; and removing, by distillation, unreacted monomers, the alkyl substituted THF solvent, and any low boiling volatile reaction products.

Abstract: The present invention is directed to a thermally curable polymer composition, and a photolithographic substrate coated therewith, the composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator. The thermally curable polymer composition may be dissolved in a solvent and used as an undercoat layer in deep UV lithography.

Abstract: A photoresist composition comprising at least one acetal polymer having a silicon substituent; provided that the silicon substituent is not directly attached to the acetal functionality, thereby providing high resolution, improved DOF, and improved dimensional stability under metrology conditions.

Abstract: Stable non-photosensitive polyimide precursor compositions with an adhesion promoter in a non-NMP solvent for use in forming high temperature resistant relief images and a process for making said images.

Abstract: A process for producing a heat resistant relief structure on a substrate, the process comprising the steps of:

Abstract: A novel CMP slurry composition used for polishing metals, the composition comprising: a dispersion solution comprising an abrasive. The slurry composition has a large particle count of about 25 to about 150,000 particles having a particle size greater than 0.5 &mgr;m in 30 &mgr;L of slurry, which is achieved by filtering the slurry composition prior to use. Also, the inclusion of a chemical activity enhancer, such as, an amine and a corrosion inhibitor, results in the appropriate copper removal rate without increasing static etch rates.

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: An organohydrosiloxane composition comprising:

Abstract: Processes to overcome mistakes, such as, incorrect film thicknesses, poor coating quality, and incorrect feature dimensions made during the lithographic process in multilayer imaging systems are provided. To optimize manufacturing efficiency, it is desirable to be able to remove the top layer (an imaging layer) without having to remove, recoat, and usually cure the bottom layer (undercoat or underlayer). A rework process for removing an imaging layer from a substrate stack is such a process. The stack comprises a substrate, an underlayer adjacent to the substrate, and an imaging layer comprising silicon adjacent to the underlayer.

Abstract: A continuous CMP process for polishing multiple conductive and non-conductive layers on a semiconductor substrate. The continuous process comprises the steps of: (a) disposing a substrate on a platen; (b) polishing a first layer using both a mechanical means and a chemical means; and (c) polishing a second layer upon adjusting at least one parameter in either the mechanical means, chemical means, or both.

Abstract: A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

Abstract: An edge bead remover composition that includes at least one ketone selected from the group consisting of: 1