Abstract: Radiation sensitive resins for use in a top layer resists in bilayer systems for use in deep UV photolithography comprises copolymers having the following structural units: ##STR1## and optionally, ##STR2## wherein n is an integer of 1 to 5, R.sup.1 is methyl or trimethylsiloxy, R.sup.2 is a tert-butyl group, R.sup.3, R.sup.4 and R.sup.5 are each independently hydrogen or a methyl group.

Abstract: The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

Abstract: A terpolymer with chemically amplified (acid labile) moieties and organosilicon moieties suitable for use as the binder resin for a photoimageable resist photoresist composition suitable for use in 193 nm photolithographic processes.The terpolymers have the following structural units: ##STR1## where R is a methyl or hydroxyethyl group, R.sup.1 is a hydrogen atom, a methyl group or a --CH.sub.2 COOCH.sub.3 group and R.sup.2 and R.sup.3 are each independently a hydrogen atom or a methyl group.

Abstract: A heat resistant positive-working photosensitive composition that has a polybenzoxazole precursor bearing acid labile functional groups, a photoacid generator, a photosensitizer, and a solvent. The polybenzoxazole precursor bearing acid labile functional groups, has the structure: ##STR1## wherein k.sub.1 is an integer of 1 or 2, k.sub.2 is an interger of 0 or 1, and the sum of k.sub.1 and k.sub.2 is 2; Ar.sub.1 is a tetravalent aromatic, aliphatic, or heterocyclic group, or mixtures thereof; Ar.sub.2 is a divalent aromatic, aliphatic, or heterocyclic group or siloxane group; D is a monovalent acid labile group; and n is an integer from 20 to 200. A portion of Ar.sub.1 can be a divalent aromatic, aliphatic, or heterocyclic diamine moiety such that the fraction of diamine compound is 0-60 mole percent and the sum of diamine and diamino dihydroxy compound is 100%.

Abstract: A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formula (II): ##STR1## wherein the photosensitive compound is used in a radiation sensitive composition and a process for forming a positive patterned image.

Abstract: A positive photosensitive resin composition comprising (a) a silane diol such as diarylsilane diol or dialkylsilane diol, (b) one or more capped polybenzoxazole precursors having the structure: ##STR1## wherein Ar.sub.1 is a tetravalent aromatic group, aliphatic group, heterocyclic group, or mixtures thereof; Ar.sub.2 is a divalent aromatic, heterocyclic, alicyclic, or aliphatic group that optionally may contain silicon; Ar.sub.3 is divalent aromatic group, aliphatic group, heterocyclic group, or mixtures thereof;Z is one of the following groups: ##STR2## x is 10 to 1000; y is 0 to 900; and b is 0.10 to 350; (c) a photosensitive agent, and (d) a solvent. The composition optionally includes an adhesion promoter, leveling agent, or mixtures thereof.

Abstract: Polymers having an average molecular weight M.sub.w (weight average) of 5,000 to 1,000,000 (measured by gel permeation chromatography), comprising structural repeating units of the formulae I-IV: ##STR1## in which R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, R.sub.8, R.sub.9 and R.sub.10 and w, x, y, and z are defined herein, are suitable as binders for DUV photoresists of high processing stability and flow resistance.

Abstract: Non-corrosive cleaning compositions that are useful for removing photoresist and/or plasma etch residues from a substrate. The cleaning composition comprises: (i) a hydroxy-(lower alkyl)-hydrazine, (ii) water, and (iii) at least one compound selected from the group consisting of a carboxylic acid, a water-miscible organic solvent and mixtures thereof.

Abstract: The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.

Abstract: This invention relates to a process for generating a organically soluble partially cross-linked acid labile polymer according to the present invention comprises the steps of providing a polymer with one or more monomer units, wherein at least one of the monomer units contain one or more pendant COOH or hydroxyl groups; and reacting said polymer with a polyvinyl ether in the presence of a acid catalyst to form links between at least two polymer chains. The resulting polymer can be used as a component in a photoresist formulation.

Abstract: Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent aromatic groups is bicyclo[3.2.2]nona-6,8-dien-3-one. Resist coatings, which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.

Abstract: The present invention is directed to a thermally curable polymer composition comprising a hydroxyl-containing polymer and a polyfunctional isocyanate as a crosslinking agent, which is particularly useful in photolithographic coating of substrates. The thermally curable polymer composition may be dissolved in a solvent and used as an undercoat layer in deep UV lithography. Furthermore, the present invention further relates to a process for using the photolithographic coated substrate for the production of relief structures.