Patents Assigned to ASM Japan K.K.
  • Polymer film and method for producing the same
    Publication number: 20060009600
    Abstract: A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.
    Type: Application
    Filed: June 16, 2005
    Publication date: January 12, 2006
    Applicants: Sumitomo Chemical Company, Limited, NEC CORPORATION, ASM Japan K.K.
    Inventors: Nobutaka Kunimi, Jun Kawahara, Akinori Nakano, Keizo Kinoshita
  • Copolymerized high polymer film and method of manufacturing the same
    Publication number: 20050282987
    Abstract: A copolymerized high polymer film includes plural organic polymers, as skeleton, and is manufactured by blowing more than two kinds of organic monomers of respectively specific structures, in a vapor phase condition, onto the surface of a heated substrate, through plasma being generated in a reaction chamber. As a result, manufacture of an organic high polymer film capable of further reducing the effective relative permittivity of organic polymer films as a whole can be achieved, and, at the same time, further improvement in mechanical strength of film as well as film forming speed can be achieved.
    Type: Application
    Filed: May 27, 2005
    Publication date: December 22, 2005
    Applicants: NEC Corporation, Sumitomo Chemical Company Limited, ASM Japan K.K.
    Inventors: Jun Kawahara, Keizo Kinoshita, Nobutaka Kunimi, Akinori Nakano
  • Low-carbon-doped silicon oxide film and damascene structure using same
    Publication number: 20050260850
    Abstract: A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.
    Type: Application
    Filed: May 24, 2004
    Publication date: November 24, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Chou Loke, Kanako Yoshioka, Kiyoshi Satoh
  • Thin-film deposition apparatus
    Publication number: 20050229848
    Abstract: A gas-feeding apparatus configured to be connected to an evacuatable reaction chamber includes a gas-distribution head for introducing gases into the chamber through a head surface. The gas-feeding head includes a first section for discharging a gas through the head surface toward a susceptor and a second section for discharging a gas through the head surface toward the susceptor. The first and the second sections are isolated from each other in the gas-distribution head, at least one of which section is coupled to an exhaust system for purging therefrom a gas present in the corresponding section without passing through the head surface.
    Type: Application
    Filed: April 15, 2004
    Publication date: October 20, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi Shinriki, Junichi Arami
  • Semiconductor-processing reaction chamber
    Patent number: 6955741
    Abstract: The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means for moving the susceptor vertically between at least a first position and a second position, wafer-lift pins passing through the through-bores wherein the lower end of each wafer pin is attached to a lift member, and a lift member linked with an elevating mechanism for moving the wafer-lift pins vertically. The disclosed apparatus reduces contamination on the underside of the semiconductor wafer.
    Type: Grant
    Filed: August 7, 2002
    Date of Patent: October 18, 2005
    Assignee: ASM Japan K.K.
    Inventor: Takayuki Yamagishi
  • Method for manufacturing semiconductor device having porous structure with air-gaps
    Patent number: 6949456
    Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: September 27, 2005
    Assignee: ASM Japan K.K.
    Inventor: Devendra Kumar
  • Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
    Publication number: 20050208217
    Abstract: A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.
    Type: Application
    Filed: October 7, 2004
    Publication date: September 22, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Hiroshi Shinriki, Baiei Kawano, Akira Shimizu
  • Semiconductor manufacturing equipment and maintenance method
    Patent number: 6945746
    Abstract: The equipment comprises a semiconductor-processing device in which a load-lock chamber, a transfer chamber and a reaction chamber are modularized into, a main frame, a stand-alone chamber frame on which the semiconductor-processing device is placed, a sliding mechanism for enabling attaching/removing of the chamber frame to/from the main frame smoothly, and a positioning mechanism for fixing a position of the chamber frame. This enables the processing device to be attached and removed at will. The method comprises pulling out from the main frame the chamber frame, on which the modularized semiconductor-processing device is placed; forming a maintenance space inside the main frame; maintaining the semiconductor-processing device and peripherals attached in the vicinity of the main frame, and putting the chamber frame with the processing device back into the main frame.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: September 20, 2005
    Assignee: ASM Japan K.K.
    Inventors: Takayuki Yamagishi, Takeshi Watanabe, Masaei Suwada
  • Shower plate having projections and plasma CVD apparatus using same
    Publication number: 20050183666
    Abstract: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.
    Type: Application
    Filed: February 18, 2005
    Publication date: August 25, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Naoto Tsuji, Hideaki Fukuda, Hiroki Arai, Yoshinori Morisada, Tamihiro Kobayashi
  • System and method of CVD chamber cleaning
    Publication number: 20050178333
    Abstract: A thin-film deposition system includes a plasma CVD reactor; a remote plasma chamber; and an electromagnetic wave generator for emitting electromagnetic waves to an interior of the reactor. Unwanted reaction products adhering to an inner surface of the reactor absorb electromagnetic waves are effectively removed.
    Type: Application
    Filed: February 18, 2004
    Publication date: August 18, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Chou Loke, Kenichi Kagami, Kiyoshi Satoh
  • Semiconductor device having porous structure
    Publication number: 20050179135
    Abstract: A semiconductor device having a hollow structure includes: a substrate on which a wiring layer is formed; a low-dielectric layer with a porosity of 6% to 25% having vias and trenches and having voids between adjacent vias; and a contact layer of copper with which the vias and trenches are filled. The contact layer is in contact with the wiring layer and an upper surface of the contact layer is exposed from the dielectric layer.
    Type: Application
    Filed: April 13, 2005
    Publication date: August 18, 2005
    Applicant: ASM Japan K.K.
    Inventor: Devendra Kumar
  • Method of film deposition using single-wafer-processing type CVD
    Patent number: 6921556
    Abstract: A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.
    Type: Grant
    Filed: March 28, 2003
    Date of Patent: July 26, 2005
    Assignee: ASM Japan K.K.
    Inventors: Akira Shimizu, Hideaki Fukuda, Baiei Kawano, Kazuo Sato
  • Apparatus and method for forming thin film using surface-treated shower plate
    Publication number: 20050156063
    Abstract: A plasma CVD apparatus includes a showerhead comprised of a body having a hollow structure. The shower plate is detachably integrated with the body at a peripheral surface of the body and a peripheral surface of the shower plate, and at least one of the peripheral surface of the body or the peripheral surface of the shower plate is surface-treated.
    Type: Application
    Filed: January 20, 2005
    Publication date: July 21, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Naoto Tsuji, Yukihiro Mori, Tominori Yoshida, Masami Suzuki
  • Method of manufacturing silicon carbide film
    Patent number: 6919270
    Abstract: A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.
    Type: Grant
    Filed: October 9, 2003
    Date of Patent: July 19, 2005
    Assignee: ASM Japan K.K.
    Inventors: Kiyoshi Satoh, Kamal Kishore Goundar
  • Method for semiconductor wafer etching
    Patent number: 6914208
    Abstract: A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: July 5, 2005
    Assignee: ASM Japan K.K.
    Inventors: Akira Shimizu, Kunitoshi Nanba
  • Thin-film forming apparatus having an automatic cleaning function for cleaning the inside
    Publication number: 20050139578
    Abstract: A method of cleaning the inside of a reaction chamber includes reducing the temperature of a susceptor to 470° C. or lower for cleaning; contacting the inside of the reaction chamber including the showerhead with fluorine radicals; cleaning the unwanted deposits by the fluorine radicals, wherein gaseous aluminum fluoride is inhibited from being emitted from the susceptor and solidified on the showerhead by maintaining the temperature of the susceptor at 470° C. or lower; and raising the temperature of the susceptor to 500-650° C. for film formation.
    Type: Application
    Filed: February 28, 2005
    Publication date: June 30, 2005
    Applicant: ASM JAPAN K.K.
    Inventors: Hideaki Fukuda, Kiyoshi Satoh
  • Method of forming interlayer insulation film
    Patent number: 6905978
    Abstract: A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the source gas is brought in, introducing an oxidizing gas with or without an additive gas into the reaction chamber after the completion of supplying the source gas and applying the radio-frequency power, and applying the radio-frequency power again. The concentration of the oxidizing gas may be 0.3% or higher and a processing time period by the oxidizing gas may be three seconds or longer.
    Type: Grant
    Filed: March 17, 2003
    Date of Patent: June 14, 2005
    Assignee: ASM Japan K.K.
    Inventors: Naoto Tsuji, Yukihiro Mori, Satoshi Takahashi, Ryo Kawaguchi
  • Low-k dielectric materials and processes
    Patent number: 6905981
    Abstract: Improved dielectric materials suitable for use in integrated circuits and computer systems are provided by a chemical vapor deposition process employing fluoroalkane precursors.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: June 14, 2005
    Assignee: ASM Japan K.K.
    Inventors: Michael A. Todd, Tominori Yoshida
  • Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
    Patent number: 6899507
    Abstract: Semiconductor processing equipment that has increased efficiency, throughput, and stability, as well as reduced operating cost, footprint, and faceprint is provided. Other than during deposition, the atmosphere of both the reaction chamber and the transfer chamber are evacuated using the transfer chamber exhaust port, which is located below the surface of the semiconductor wafer. This configuration prevents particles generated during wafer transfer or during deposition from adhering to the surface of the semiconductor wafer. Additionally, by introducing a purge gas into the transfer chamber during deposition, and by using an insulation separating plate 34, the atmospheres of the transfer and reaction chambers can be effectively isolated from each other, thereby preventing deposition on the walls and components of the transfer chamber.
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: May 31, 2005
    Assignee: ASM Japan K.K.
    Inventors: Takayuki Yamagishi, Masaei Suwada, Takeshi Watanabe
  • Source gas flow control and CVD using same
    Publication number: 20050098906
    Abstract: A source-gas supply apparatus for supplying a source gas into a CVD reactor includes: a reservoir for storing a liquid material; a gas flow path connected the reservoir and the CVD reactor; a sonic nozzle disposed in the gas flow path, through which the source gas is introduced into the CVD reactor; a pressure sensor disposed in the gas flow path upstream of the sonic nozzle; a flow control valve disposed in the gas flow path upstream of the pressure sensor; and a flow control circuit which receives a signal from the pressure sensor and outputs a signal to the flow control valve to adjust opening of the flow control valve as a function of the signal from the pressure sensor.
    Type: Application
    Filed: August 27, 2004
    Publication date: May 12, 2005
    Applicants: ASM JAPAN K.K., ADVANCED ENERGY JAPAN K.K.
    Inventors: Kiyoshi Satoh, Hak Lee, Tomohisa Nishikawa, Akira Sasaki, Masahiro Nanbu