Abstract: A magnetic shield having non-magnetic gaps provides reduced magnetic cross-talk for a linear motor array in a precision positioning system. Redirecting the leakage flux limits the cross-talk and associated deleterious effects. Such preferred magnetic circuit paths for the leakage are affixed to the moving magnet system of the linear motor. Embodiments of the preferred flux leakage paths are realized by providing a ferromagnetic shield separated by a non-magnetic gap between the permanent magnets and the back-irons. In another embodiment, the ferromagnetic shield separation includes diamagnetic materials.

Abstract: A method of fabricating or preparing an optical component, such as a mirror, using an amorphous oxide coated substrate is presented. An amorphous oxide coating is applied to an optical substrate. An assessment of surface roughness of the coated surface is performed. The coated surface is polished based on the assessment. Initial assessments can be conducted and polishing can be performed based on those initial assessments prior to applying the coating to better prepare the surface for the coating. Each assessment can assess the surface's Mid-Spatial Frequency Roughness (MSFR), High-Spatial Frequency Roughness (HSFR), or both. The performing of the assessments, polishing and/or coating can be computer-controlled. This process is ideal in the fabrication of an optical component formed from a substrate with a near-zero coefficient of thermal expansion. An optical component fabricated in this manner is also presented.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: A lithographic apparatus includes a uniformity correction system located at a plane and configured to receive a substantially constant pupil when illuminated with the beam of radiation. The uniformity correction system includes fingers that move into and out of intersection with a beam so as to correct an intensity of respective portions of the radiation beam. According to another embodiment, a method includes for: focusing a beam of radiation at a first plane to form pupil; adjusting the intensity of the beam near the first plane by moving fingers located near the first plane into and out of a path of the beam of radiation, wherein a width of a tip of each of the fingers is larger than that of corresponding actuating devices used to move each corresponding one of the fingers; patterning the beam; and projecting the patterned beam onto a substrate.

Abstract: An iterative method of producing optimized setpoint data for controlling the actuation of elements of an array of individually controllable elements in a maskless system and systems therefore. The optimization is based on estimation of a device structure that can utilizes one or more of the following factors: the low-pass characteristics of the projection system, the configuration of the illumination system, and the process window properties.

Abstract: Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaF2 and/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG. 2.

Abstract: A system and method are provided for securely manufacturing a device at a foundry. For example, an integrated circuit chip may be securely fabricated at an untrusted foundry by later verifying authenticity of the integrated circuit chip based on a valid usage of an original source code file associated with a semiconductor manufacturing process of the integrated circuit chip. The integrated circuit chip may be authenticated by matching a first set of unique daughter codes generated during fabrication with a second set of unique daughter codes generated independently by some entity other than the foundry. In this way, a trusted electronics integrator may compare the first and second unique daughter codes to nondestructively determine whether the integrated circuit chip is a trusted device or a tampered device.

Abstract: A system for equalizing pulse to pulse energy of a light beam includes a group of optical devices including an optical device configured to exhibit nonlinear properties, e.g., higher order or third order nonlinear properties. Transmission properties of an unequalized light beam passing through the group of optical devices change such that an output intensity of a resulting light beam output from the optical devices is equalized. One example configuration includes at least first and second prisms having nonlinear properties, i.e., higher order or third order, and configured as a beam steering system.

Abstract: According to one aspect of the invention, a wafer processing apparatus is provided. The wafer processing apparatus may include a wafer support, a dispense head, and a solvent bath. The dispense head may be moveable between a position over the wafer support and a position over the solvent bath. When the dispense head is positioned over the solvent bath, a fluid dispensed from the dispense head may enter a drain and nozzles on the dispense head may be exposed to a controlled atmosphere within a chamber of the solvent bath.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: A heat exchanging core for a micro-channel heat exchanger includes at least one heat conducting plate, which has at least one channel formed between a first side and a second side of the heat conducting plate. The at least one channel has a channel length to hydraulic diameter ratio of less than 100, wherein the channel length is defined as a distance between the first and second sides of the heat conducting plate. A micro-channel heat exchanger includes a housing defining a cavity therein, the housing including an inlet and an outlet coupled to the cavity, and a heat exchanging core positioned within the cavity between the liquid inlet and the liquid outlet. The present invention provides, among other features, improved heat transfer, reduced pressure drops, and reduced jitter. The present invention can be implemented for laminar flow and/or turbulent flow environments.

Abstract: A liquid immersion lithography system includes projection optics (PL) and a showerhead (604). The projection optics are configured to expose a substrate (W) with a patterned beam. The showerhead includes a first nozzle (610) and a second nozzle (612) that are configured to be at different distances from a surface of the substrate during an exposure operation.

Abstract: In a lithographic apparatus, slippage of a patterning device is substantially eliminated during movement of a patterning device stage by providing a magnetostrictive actuator to apply an accelerating force to the patterning device to compensate for forces that would otherwise tend to cause slippage when the patterning device stage moves,

Abstract: A method and systems for reticle inspection. The method includes coherently illuminating surfaces of an inspection reticle and a reference reticle, applying a Fourier transform to scattered light from the illuminated surfaces, shifting the phase of the transformed light from the reference reticle such that a phase difference between the transformed light from the inspection reticle and the transformed light from the reference reticle is 180 degrees, combining the transformed light as an image subtraction, applying an inverse Fourier transform to the combined light, and detecting the combined light at a detector. An optical path length difference between two optical paths from the illumination source to the detector is less than a coherence length of the illumination source. The image detected by the detector represents a difference in amplitude and phase distributions of the reticles allowing foreign particles, defects, or the like, to be easily distinguished.

Abstract: A system for equalizing pulse to pulse energy of a light beam includes a group of optical devices including an optical device configured to exhibit third order nonlinear properties. Transmission properties of an unequalized light beam passing through the group of optical devices change such that an output intensity of a resulting light beam output from the optical devices is equalized. One example configuration includes a beam splitter, a nonlinear interference filter, a mirror and a beam combiner. A first portion of the light beam that is reflected from the nonlinear interference filter is combined with the light beam such that a resulting combined light beam has equalized output intensity. Another example includes at least first and second prisms having third order nonlinear properties and configured as a beam steering system. A lithography system and a method of equalizing pulse to pulse energy in a light beam are also presented.

Abstract: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

Abstract: A system and method are used for controlling fluctuations in one or more of a beam pointing error, a beam positioning error, a beam size error or a beam divergence error of a beam of light in a lithography system. An optical apparatus may comprise a first beam control module having a first optics in an optical axis for optically isolating a laser pulse from a light source associated with an illuminator to provide the beam of light. These beam related errors may be selectively stabilized by either homogenizing selectively the spatial field and/or angular information of a given illumination profile for the beam of light and symmetrizing other one of the spatial field or angular information which is not being homogenized based on a first arrangement of the first optics or homogenizing and symmetrizing both of the spatial field and angular information based on a second arrangement of the first optics.

Abstract: A coherence remover is provided. In an embodiment the coherence remover includes a first mirror and a second mirror coupled to the first mirror. The coherence remover is configured to receive an input beam. Each of the first and second mirrors is configured to reflect a respective portion of the input beam to produce respective one or more intermediate beams. The intermediate beams collectively form an output beam that has a reduced coherence compared to the input beam.

Abstract: A maskless lithography system has a patterning array assembly formed by a plurality of patterning arrays, each patterning array having a substrate. Each patterning array has a plurality of individually controllable elements to endow an incoming radiation beam with a patterned cross-section. To reduce the global unflatness of the patterning array assembly that is oriented in a first plane, the position of at least one substrate of a patterning array is adjusted to a second orientation. Reduction of the global unflatness of the patterning array assembly reduces a telecentricity error without introducing additional error into the maskless lithography system.

Abstract: A coherence remover includes a first partially reflective surface and a second partially reflective surface. The coherence remover is configured to receive an input beam. Each of the first and second reflective surfaces is configured to reflect a respective portion of the input beam to produce respective one or more intermediate beams. The intermediate beams collectively form an output beam that has a reduced coherence compared to the input beam.