Abstract: A lithographic apparatus has an alignment system including a radiation source configured to convert narrow-band radiation into continuous, flat and broad-band radiation. An acoustically tunable narrow pass-band filter filters the broad-band radiation into narrow-band linearly polarized radiation. The narrow-band radiation may be focused on alignment targets of a wafer so as to enable alignment of the wafer. In an embodiment, the filter is configured to modulate an intensity and wavelength of radiation produced by the radiation source and to have multiple simultaneous pass-bands. The radiation source generates radiation that has high spatial coherence and low temporal coherence.

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract: In one embodiment of the present invention, there is provided a gas gauge for use in a vacuum environment having a measurement gas flow channel. The gas gauge may comprise a measurement nozzle in the measurement gas flow channel. The measurement nozzle may be configured to operate at a sonically choked flow condition of a volumetric flow being sourced from a gas supply coupled to the measurement gas flow channel. The gas gauge may further comprise a pressure sensor operatively coupled to the measurement gas flow channel downstream from the sonically choked flow condition of the volumetric flow to measure a differential pressure of the volumetric flow for providing an indication of a gap between a distal end of the measurement nozzle and a target surface proximal thereto.

Abstract: Systems and methods for inspection are provided utilizing a wide angle optical system. The optical system includes a wide angle input lens group and an output lens group. The wide angle input lens group is configured to receive wide-angle radiation, e.g., having an angular spread of 60 degrees or more, from an object surface, and produce imagable radiation. The wide angle input lens group is arranged such that no intermediate focused image is formed within or after the wide angle input lens group. The output lens group is configured to receive the imagable radiation from the wide angle input lens group and focus the imagable radiation onto an image plane to image at least part of the object surface. A detector receives the image of the at least part of the object surface and, based on the received image, detects, for example, contamination on the object surface.

Abstract: A patterning device, including alignment targets having alignment features formed from a plurality of diffractive elements, each diffractive element including an absorber stack and a multi-layered reflector stack is provided. The diffractive elements are configured to enhance a pre-determined diffraction order used for pre-alignment and to diffract light in a pre-determined direction of a pre-alignment system when illuminated with light of a wavelength used for the pre-alignment. The diffractive elements may occupy at least half of an area of each alignment feature. The diffractive elements may be configured to enhance first or higher order diffractions, while substantially reducing zeroth diffraction orders and specular reflection when illuminated with a wavelength used for reticle prealignment. The dimensions of each diffractive element may be a function of a diffraction grating period of each alignment feature.

Abstract: A gas gauge (100) is provided for use in a vacuum environment having a measurement gas flow channel (105). The gas gauge comprises a measurement nozzle (110) in the measurement gas flow channel (105). The measurement nozzle (110) is configured to operate at a sonically choked flow condition of a volumetric flow being sourced from a gas supply (120) coupled to the measurement gas flow channel (105). The gas gauge (100) further comprises a pressure sensor (127) operatively coupled to the measurement gas flow channel (105) downstream from the sonically choked flow condition of the volumetric flow to measure a differential pressure of the volumetric flow for providing an indication of a gap (130) between a distal end of the measurement nozzle (135) and a target surface (140) proximal thereto.

Abstract: A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. A liquid confinement structure of the liquid supply system confines the liquid to a space adjacent the substrate at least during projection of the pattern, the liquid confinement structure including an extractor to remove liquid from the space, the extractor including a two dimensional array of extraction openings.

Abstract: An immersion lithography apparatus is provided that includes an energy source, a projection optical system, a stage, a showerhead including an immersion liquid supply device and an immersion liquid discharge device that produces a flow of liquid within an exposure zone, and a cleaning device that cleans a portion of the projection optical system having been contacted with the immersion liquid by means of a cleaning gas. In an embodiment, the cleaning device includes a gas supply device and a gas discharge device that produce a flow of cleaning gas into the exposure zone. In embodiments, the apparatus includes a stage that includes a dose sensor and/or an ultra-violet light source. A method for insitu cleaning of a final lens element within an immersion lithography system having an immersion fluid showerhead that provides immersion fluid to an exposure zone of the immersion lithography system is also provided.

Abstract: A lithography system can include a radiation source, an illumination system, a patterning device, and a projection system. The illumination system can be configured to process a beam of radiation to produce a plurality of beams of radiation. The illumination system can include a pupil defining element, a condenser lens, a field defining element, a first relay that includes first and second lens arrays, a plurality of rods, a diaphragm having transmission areas, and a second relay. The patterning device can be configured to pattern the plurality of beams of radiation. Further, the projection system can be configured to project the patterned beams onto a substrate.

Abstract: Systems and methods are provided for inspecting an object surface. An illumination source illuminates the object surface. An optic intercepts scattered light from the illuminated object surface and projects a real image of an area of the object surface. A sensor receives the projected real image. A computer system, coupled to the sensor, stores and analyzes the real image. The real image is processed to detect particles located on the object surface. This arrangement is particularly useful for detecting contaminants or defects on a reticle of a lithography device.

Abstract: A lithographic apparatus is described that comprises a support structure to hold an object. The object may be a patterning device or a substrate to be exposed. The support structure comprises a chuck, on which the object is supported, and an array of shear-compliant elongated elements normal to the chuck and the stage, such that first ends of the elongated elements contact a surface of the chuck and second ends of the elongated elements contact a stage. Through using the array of elongated elements, a transfer of stress between the stage and the chuck is substantially uniform, resulting in minimization of slippage of the object relative to the surface of the chuck during a deformation of the chuck due to the stress.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: In a lithographic apparatus, dampers are provided that may be used within mounts for optical elements in order to damp the motion of the optical element relative to the component to which it is mounted.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.

Abstract: A system and method are provided for writing patterns onto substrates. First and second beams of extreme ultraviolet (EUV) radiation are produced. An exposure unit is used to project the first and second beams of EUV radiation onto a substrate. The first and second beams of radiation interfere with each other to expose a first set of parallel lines at an exposure field of the substrate.

Abstract: A beam modifying unit increases both temporal pulse length and Etendue of an illumination beam. The pulse modifying unit receives an input pulse of radiation and emits one or more corresponding output pulses of radiation. A beam splitter divides the incoming pulse into a first and a second pulse portion, and directs the first pulse portion along a second optical path and the second portion along a first optical path as a portion of an output beam. The second optical path includes a divergence optical element. A first and a second mirror, each with a radius of curvature, are disposed facing each other with a predetermined separation, and receive the second pulse portion to redirect the second portion, such that the optical path of the second portion through the pulse modifier is longer than that of the first portion, and the separation is less than radius of curvature.

Abstract: A pulse stretcher includes a beam splitter configured to split an input light beam into first and second beams, a con-focal resonator including first and second con-focal mirrors, and a fold mirror. The beam splitter, con-focal resonator, and fold mirror are optically arranged such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement. The apparatus further includes one or more optical elements in an optical path of the input light beam prior to the beam splitter such that a focal point of the first beam is formed at a distance away from the fold mirror preventing energy density-related damage to the fold mirror. The apparatus can further include one or more additional optical elements to provide re-conditioning of the modified beam. A related method is also disclosed.

Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.

Abstract: An electrostatic clamp for use in a lithographic apparatus includes burls and an electrode surrounded by an insulator and/or a dielectric material between adjacent burls. In an embodiment, two or more layers of dielectric material are provided between adjacent burls and surround an electrode provided between adjacent burls. The electrostatic clamp may be used to clamp an object to an object support in a lithographic apparatus.