Abstract: A metrology system includes a radiation source (708), a phased array (722a,b;724a,b;726;734), a detector, and a comparator. The phased array includes optical elements (706), waveguides (704), and phase modulators (702). The phased array generates a beam of radiation and directs the beam toward a surface of an object. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves combine to form the beam. The detector receives radiation scattered from the surface and generates a detection signal based on the received radiation. The comparator analyzes the detection signal and determines a location of a defect on the surface based on the analyzing.

Abstract: A metrology system (400) includes a multi-source radiation system. The multi-source radiation system includes a waveguide device (502) and the multi-source radiation system is configured to generate one or more beams of radiation. The metrology system (400) further includes a coherence adjuster (500) including a multimode waveguide device (504). The multimode waveguide device (504) includes an input configured to receive the one or more beams of radiation from the multi-source radiation system (514) and an output (518) configured to output a coherence adjusted beam of radiation for irradiating a target (418). The metrology system (400) further includes an actuator (506) coupled to the waveguide device (502) and configured to actuate the waveguide device (502) so as to change an impingement characteristic of the one or more beams of radiation at the input of the multimode waveguide device (504).

Abstract: Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include irradiating, by a radiation source, a portion of a finger assembly with radiation. The example method can further include receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly. The example method can further include determining, by a processor, a change in a shape of the finger assembly based on the received radiation. The example method can further include generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly. Subsequently, the example method can include transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.

Abstract: An optical filter apparatus including an optical divergence device, operable to receive optical pulses and spatially distribute the optical pulses over an optical plane in dependence with a pulse energy of each of the optical pulses; and a spatial filter, located at the optical plane, operable to apply spatial filtering to the optical pulses based on a location of each of the optical pulses at the optical plane resulting from the spatial distributing.

Abstract: A metrology system includes a radiation source, first, second, and third optical systems, and a processor. The first optical system splits the radiation into first and second beams of radiation and impart one or more phase differences between the first and second beams. The second optical system directs the first and second beams toward a target structure to produce first and second scattered beams of radiation. The third optical system interferes the first and second scattered beams at an imaging detector. The imaging detector generates a detection signal based on the interfered first and second scattered beams. The metrology system modulates one or more phase differences of the first and second scattered beams based on the imparted one or more phase differences. The processor analyzes the detection signal to determine a property of the target structure based on at least the modulated one or more phase differences.

Abstract: A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.

Abstract: The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.

Abstract: A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device, a projection system to project an image of the pattern onto a substrate, a movable stage to support the patterning device or the substrate, a slotted object, and a locking device (700) to prevent a motion of the movable stage. The locking device comprises an actuator (702) and a wheel device (704) comprising a ring feature (708) and coupled to the actuator. The actuator rotates the wheel device about a rotation axis (706). The ring feature has a width (710) defined parallel to the rotation axis. The width is variable with respect to azimuthal direction of the wheel device. The ring feature engages a slot of the slotted object. The rotating adjusts the width of the ring feature within the slot such that a relative motion between the device and the slotted object is prevented.

Abstract: A method for reducing sticking of an object to a surface used in a lithography process includes receiving, at a control computer, instructions for a tool configured to modify the surface and forming, in a deterministic manner based on the instructions received at the control computer, a modified surface having a furrow and a ridge, wherein the ridge reduces the sticking by reducing a contact surface area of the modified surface. Another apparatus includes a modified surface that includes furrows and ridges forming a reduced contact surface area to reduce a sticking of an object to the modified surface, the ridges having an elastic property that causes the reduced contact surface area to increase when the plurality of ridges is elastically deformed.

Abstract: Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include irradiating, by a radiation source, a portion of a finger assembly with radiation. The example method can further include receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly. The example method can further include determining, by a processor, a change in a shape of the finger assembly based on the received radiation. The example method can further include generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly. Subsequently, the example method can include transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.

Abstract: A patterning device pre-alignment sensor system is disclosed. The system comprises at least one illumination source configured to provide an incident beam along a normal direction towards a patterning device. The system further comprises an object lens group channel along the normal direction configured to receive a 0th order refracted beam from the patterning device. The system further comprises a first light reflector configured to redirect the 0th order refracted beam to form a first retroreflected beam. The system further comprises a first image lens group channel configured to transmit the first retroreflected beam to a first light sensor. The first light sensor is configured to detect the first retroreflected beam to determine a location feature of the patterning device.

Abstract: A sensor apparatus includes an illumination system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path and includes an adjustable optic. The adjustable optic is configured to transmit the illumination beam toward a diffraction target on a substrate that is disposed adjacent to the illumination system. The transmitting generates a fringe pattern on the diffraction target. A signal beam includes diffraction order subbeams that are diffracted by the diffraction target. The detector system is configured to collect the signal beam. The processor is configured to measure a characteristic of the diffraction target based on the signal beam. The adjustable optic is configured to adjust an angle of incidence of the illumination beam on the diffraction target to adjust a periodicity of the fringe pattern to match a periodicity of the diffraction target.

Abstract: A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.

Abstract: A method for generating an alignment signal that includes detecting local dimensional distortions of an alignment mark and generating the alignment signal based on the alignment mark. The alignment signal is weighted based on the local dimensional distortions of the alignment mark. Detecting the local dimensional distortions can include irradiating the alignment mark with radiation, the alignment mark including a geometric feature, and detecting one or more phase and/or amplitude shifts in reflected radiation from the geometric feature. The one or more phase and/or amplitude shifts correspond to the local dimensional distortions of the geometric feature. A parameter of the radiation, an alignment inspection location within the geometric feature, an alignment inspection location on a layer of a structure, and/or a radiation beam trajectory across the geometric feature may be determined based on the one or more detected phase and/or amplitude shifts.

Abstract: Systems, apparatuses, and methods are provided for transporting a reticle chamber (pod) for processing. In one example, a system for transporting the pod is disclosed. The system may include a moving apparatus, abase coupled to the moving apparatus, and a gripping ring extending from the base. In some aspects, the gripping ring grips a flange extending from the pod. The moving apparatus moves the base in response to the gripping ring gripping the flange.

Abstract: Systems, apparatuses, methods, and computer program products are provided for determining a free form flatness of a substrate table. An example system can include a substrate table that includes a first substrate table surface and a grounded substrate table electrical connection configured to ground the substrate table. The system can further include a substrate that includes a semiconducting layer, a thermally-grown insulating layer, a first substrate surface disposed on the insulating layer, and a substrate electrical connection configured to transmit a voltage to the semiconducting layer. The system can further include a metrology system configured to apply a voltage to the substrate electrical connection to electrostatically clamp the substrate to the substrate table, measure a flatness of the first substrate surface, and determine a free form flatness of the first substrate table surface based on the measured flatness of the first substrate surface.

Abstract: An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing. The spurious signal is diminished for at least a portion of the continuous spectral range.

Abstract: An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a first illumination beam at a first wavelength and a second illumination beam at a second wavelength. The first wavelength is different from the second wavelength. The illumination system irradiates an object simultaneously with the first illumination beam and the second illumination beam. The detection system receives radiation scattered by a particle present at a surface of the object at the first wavelength. The detection system generates a detection signal. The processing circuitry determines a characteristic of the particle based on the detection signal.

Abstract: A method for source mask optimization or mask only optimization used to image a pattern onto a substrate is described. The method comprises determining a non-uniform illumination intensity profile for illumination from an illumination source; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto the substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination source and the projection optics of a lithographic apparatus. In some embodiments, the projection optics comprise a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may comprise performing optical proximity correction, for example.

Abstract: A metrology or inspection system, a lithographic apparatus, and a method are provided. The system includes an illumination system, an optical system, a first optical device, a second optical device, a detector, and a processor. The optical system is configured to split an illumination beam into a first sub-beam and a second sub-beam. The first optical device is configured to receive the first sub beam and direct the first sub-beam towards a first spot on a substrate. The substrate includes one or more target structures. The second optical device is configured to receive the second sub-beam and direct the second sub-beam towards a second spot on the substrate. The first spot is a different location than the second spot. The detector is configured to receive diffracted beams and to generate a detection signal. The processor is configured to determine a property of the one or more target structures.