Abstract: An inspection system (1600), a lithography apparatus, and an inspection method are provided. The inspection system (1600) includes an illumination system (1602), a detection system (1606), and processing circuitry (1622). The illumination system generates a first illumination beam (1610) at a first wavelength and a second illumination beam (1618) at a second wavelength. The first wavelength is different from the second wavelength. The illumination system irradiates an object (1612) simultaneously with the first illumination beam and the second illumination beam. The detection system receives radiation (1620) scattered by a particle (1624) present at a surface (1626) of the object at the first wavelength. The detection system generates a detection signal. The processing circuitry determines a characteristic of the particle based on the detection signal.

Abstract: An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing The spurious signal is diminished for at least a portion of the continuous spectral range.

Abstract: An apparatus for and method of sensing multiple alignment marks in which the optical axis of a detector is divided into multiple axes each of which can essentially simultaneously detect a separate alignment mark to generate a signal which can then be multiplexed and presented to a single detector or multiple detectors thus permitting more rapid detection of multiple marks.

Abstract: A system (400) includes an illumination system (402), a detector (404), and a comparator (406). The illumination system includes a radiation source (408) and a spatial light modulator (410). The radiation source generates a beam of radiation (442). The spatial light modulator directs the beam toward a surface (436) of an object (428) and adjusts a spatial intensity distribution of the beam at the surface. The detector receives radiation (444) scattered at the surface and by a structure (434) near the surface. The detector generates a detection signal based on the received radiation. The comparator receives the detection signal, generates a first image based on the detection signal, and distinguishes between a spurious signal and a signal corresponding to a presence of a foreign particle on the surface based on the first image and the adjusted spatial intensity distribution.

Abstract: A pattering device inspection apparatus, system and method are described. According to one aspect, an inspection method is disclosed, the method including receiving, at a multi-element detector within an inspection system, radiation scattered at a surface of an object. The method further includes measuring, with processing circuitry, an output of each element of the multi-element detector, the output corresponding to the received scattered radiation. Moreover, the method includes calibrating, with the processing circuitry, the multi-element detector by identifying an active pixel area comprising one or more elements of the multi-element detector with a measured output being above a predetermined threshold. The method also includes identifying an inactive pixel area comprising a remainder of elements of the multi-element detector. Additionally, the method includes setting the active pixel area as a default alignment setting between the multi-element detector and a light source causing the scattered radiation.

Abstract: Embodiments herein describe methods, devices, and systems for rupture detection and end-of-life monitoring of dynamic gas lock (DGL) membranes and pupil facet mirrors in lithographic apparatuses. A method for detecting rupture of a dynamic gas lock membrane in a lithographic apparatus includes illuminating the dynamic gas lock membrane with a measurement beam using a radiation source, in which the dynamic gas lock membrane is arranged between a wafer and projection optics of the lithography apparatus, and determining whether any radiation from the measurement beam is reflected from the dynamic gas lock membrane by using reflection collection optics, in which the reflection collection optics are arranged above the dynamic gas lock membrane. A rupture in the dynamic gas lock membrane is detected if no radiation is reflected from the dynamic gas lock membrane. If radiation is reflected from the dynamic gas lock membrane, the dynamic gas lock membrane is not ruptured.

Abstract: Embodiments herein describe methods, devices, and systems for a reticle gripper damper and isolation system for handling reticles and reducing vibrations in a reticle handler for lithography apparatuses and systems. A reticle handler apparatus includes a reticle handler arm, a reticle baseplate configured to hold the reticle, and a gripper arranged to connect the reticle baseplate to the reticle handler arm. The gripper includes a static structure that is coupled to the reticle handler arm, an isolation structure that is coupled to the static structure, and one or more damping elements. The gripper is configured to reduce vibrations of the reticle in the reticle handler apparatus using the one or more damping elements.

Abstract: An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.

Abstract: A system includes an illumination system, an optical element, and a detector. The optical system is implemented on a substrate. The illumination system includes first and second sources and first and second generators. The illumination system generates a beam of radiation. The first and second sources generate respective first and second different wavelength bands. The first and second resonators are optically coupled to respective ones of the first and second sources and narrow respective ones of the first and second wavelength bands. The optical element directs the beam toward a target structure. The detector receives radiation from the target structure and to generate a measurement signal based on the received radiation.

Abstract: An inspection system includes a radiation source that generates a beam of radiation and irradiates a first surface of an object, defining a region of the first surface of the object. The radiation source also irradiates a second surface of the object, defining a region of the second surface, wherein the second surface is at a different depth level within the object than the first surface. The inspection system may also include a detector that defines a field of view (FOV) of the first surface including the region of the first surface, and receives radiation scattered from the region of the first surface and the region of the second surface. The inspection system may also include a processor that discards image data not received from the region of the first surface, and constructs a composite image comprising the image data from across the region of the first surface.

Abstract: A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.

Abstract: Systems, apparatuses, and methods are provided for manufacturing a wafer clamp having hard burls. The method can include providing a first layer that includes a first surface. The method can further include forming a plurality of burls over the first surface of the first layer. The forming of the plurality of burls can include forming a subset of the plurality of burls to a hardness of greater than about 6.0 gigapascals (GPa).

Abstract: Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.

Abstract: A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.

Abstract: Embodiments herein describe methods, devices, and systems for reducing an electric field at a clamp-reticle interface using an enhanced electrostatic clamp. In particular, the electrostatic clamp includes a clamp body, an electrode layer disposed on a top surface of the clamp body, and a plurality of burls that project from a bottom surface of the clamp body, wherein the electrode layer comprises a plurality of cutouts at predetermined locations that vertically correspond to locations of the plurality of burls at the bottom surface of the clamp body.

Abstract: Methods and systems are described for reducing particulate contaminants on a clamping face of a clamping structure in a lithographic system. A substrate such as a cleaning reticle is pressed against the clamping face. A temperature differential is established between the substrate and the clamping face either before or after clamping occurs to facilitate transfer of particles from the clamping face to the substrate.

Abstract: A method to reduce sensitivity of a level sensor, arranged to measure a height of a substrate, to variations of a property of an optical component in the level sensor includes directing a beam of radiation toward a diffractive element and directing the beam, via an optical system, to a first reflective element at a first angle of incidence. The beam has a first polarization and a second polarization that is perpendicular to the first polarization. The first reflective element reflects the beam toward a second reflective element at a second angle of incidence causing the beam to impinge on the substrate. The first and second angles of incidence are selected to reduce variations of a ratio of intensities of the first polarization to the second polarization of the beam imparted by a property of a layer of at least one of the first and second reflective elements.

Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

Abstract: Apparatus for, and method of, measuring a parameter of an alignment mark on a substrate in which an optical system is arranged to receive at least one diffraction order from the alignment mark and the diffraction order is modulated at a pupil or a wafer conjugate plane of the optical system, a solid state optical device is arranged to receive the modulated diffraction order, and a spectrometer is arranged to receive the modulated diffraction order from the solid state optical device and to determine an intensity of one or more spectral components in the modulated diffraction order.

Abstract: A calibration system includes a plate, a fixed alignment mark, and a variable diffraction grating. The plate is adjacent to a wafer alignment mark disposed on a wafer. The fixed alignment mark is disposed on the plate and is configured to act as a reference mark for an initial calibration of the calibration system. The variable diffraction grating is disposed on the plate and includes a plurality of unit cells configured to form a plurality of variable alignment marks. The variable diffraction grating is configured to calibrate a shift-between-orders of one of the variable alignment marks and the fixed alignment mark.