Patents Assigned to ASML Netherlands B.V.
  • Publication number: 20210223703
    Abstract: A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.
    Type: Application
    Filed: March 31, 2021
    Publication date: July 22, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hans BUTLER, Engelbertus Antonius Fransiscus VAN DER PASCH, Paul Corné Henri DE WIT
  • Publication number: 20210223706
    Abstract: The invention provides an assembly comprising a cryostat (6, 7, 8, 9) and a flat coil layer (3) of superconducting coils (2) for use with a magnetic levitation and/or acceleration motor system (1) of a lithographic apparatus. The cryostat comprises two insulation coverings (8, 9). The coil layer is arranged between the two coverings. The coverings each comprise an inner plate (10) configured to be cryocooled and an outer plate (11) parallel to the inner plate, and an insulation system with a vacuum layer (13) between the inner and outer plate. The insulation system of said covering comprises a layer of circular bodies (101), the central axes of these bodies extending perpendicular to the inner and outer plate, and is configured to provide a layer of point contacts between two layers of circular bodies or between a layer of circular bodies and the inner and/or outer plate.
    Type: Application
    Filed: May 9, 2019
    Publication date: July 22, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Hessel Bart KOOLMEES, Johannes Petrus Martinus Bernardus VERMEULEN
  • Patent number: 11067902
    Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: July 20, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Patrick Warnaar, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
  • Patent number: 11067901
    Abstract: A method including: obtaining a logistic mathematical model predicting the formation of a physical structure created using a patterning process; evaluating the logistic mathematical model to predict formation of a part of the physical structure and generate an output; and adapting, based on the output, an aspect of the patterning process.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: July 20, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Adrianus Cornelis Matheus Koopman, Markus Gerardus Martinus Maria Van Kraaij, Maxim Pisarenco
  • Publication number: 20210216017
    Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
    Type: Application
    Filed: March 26, 2021
    Publication date: July 15, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hans VAN DER LAAN, Wim Tjibbo Tel, Marinus Jochemsen, Stefan Hunsche
  • Publication number: 20210215622
    Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
    Type: Application
    Filed: March 8, 2021
    Publication date: July 15, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
  • Publication number: 20210216697
    Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.
    Type: Application
    Filed: May 23, 2019
    Publication date: July 15, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Marinus Aart VAN DEN BRINK, Yu CAO, Yi ZOU
  • Publication number: 20210215872
    Abstract: A hollow-core photonic crystal fiber (HC-PCF) assembly for converting input radiation to broadband radiation, the hollow core fiber assembly including: a micro-structured fiber with a hollow core extending along a length of the fiber from an input end configured to receive input radiation to an output end configured to output broadband radiation, wherein the hollow core of the fiber is configured to include a medium; and a density control system configured to control a density profile of the medium along at least a part of the length of the fiber to establish a desired zero dispersion wavelength profile along at least a part of the length of the fiber.
    Type: Application
    Filed: December 21, 2020
    Publication date: July 15, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Hendrik SABERT, Patrick Sebastian UEBEL, Willem Richard PONGERS
  • Patent number: 11062877
    Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: July 13, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Shuai Li, Weiming Ren, Xuedong Liu, Juying Dou, Xuerang Hu, Zhongwei Chen
  • Patent number: 11061320
    Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: July 13, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Johan Hendrik Klootwijk, Wilhelmus Theodorus Anthonius Johannes Van Den Einden
  • Patent number: 11062874
    Abstract: The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: July 13, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Weiming Ren, Xuedong Liu, Xuerang Hu, Zhong-wei Chen
  • Patent number: 11061336
    Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: July 13, 2021
    Assignee: ASML Netherlands B.V.
    Inventors: Hubertus Johannes Gertrudus Simons, Everhardus Cornelis Mos, Xiuhong Wei, Reza Mahmoodi Baram, Hadi Yagubizade, Yichen Zhang
  • Publication number: 20210208512
    Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.
    Type: Application
    Filed: November 1, 2017
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Victor Emanuel CALADO, Youping ZHANG, Maurits VAN DER SCHAAR, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU
  • Publication number: 20210208519
    Abstract: Disclosed is a bandwidth calculation system for determining a desired wavelength bandwidth for a measurement beam in a mark detection system, the bandwidth calculation system comprising a processing unit configured to determine the desired wavelength bandwidth based on mark geometry information, e.g. comprising mark depth information representing a depth of a mark. In an embodiment the desired wavelength bandwidth is based on a period and/or a variance parameter of a mark detection error function. The invention further relates to a mark detection system, a position measurement system and a lithographic apparatus comprising the bandwidth calculation system, as well as a method for determining a desired wavelength bandwidth.
    Type: Application
    Filed: May 2, 2019
    Publication date: July 8, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Jia WANG, Jacob Fredrik Friso KLINKHAMER, Hua LI
  • Publication number: 20210208083
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Application
    Filed: March 4, 2021
    Publication date: July 8, 2021
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey DEN BOEF, Amo Jan BLEEKER, Youri Johannes VAN DOMMELEN, Mircea DUSA, Antoine Gaston Marie KIERS, Paul Frank LUEHRMANN, Henricus Petrus Maria PELLEMANS, Maurits VAN DER SCHAAR, Cédric Désiré GROUWSTRA, Markus Geradus Maritinus VAN KRAAIJ
  • Publication number: 20210208513
    Abstract: A method of determining a patterning process parameter from a metrology target, the method including: obtaining a plurality of values of diffraction radiation from the metrology target, each value of the plurality of values corresponding to a different illumination condition of a plurality of illumination conditions of illumination radiation for the target; and using the combination of values to determine a same value of the patterning process parameter for the target.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Narjes JAVAHERI, Mohammadreza HAJIAHMADI, Olger Victor ZWIER, Gonzalo Roberto SANGUINETTI
  • Publication number: 20210210309
    Abstract: A charged particle assessment tool includes: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes adjacent respective ones of the beam apertures and configured to capture charged particles emitted from the sample.
    Type: Application
    Filed: December 24, 2020
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventor: Marco Jan-Jaco WIELAND
  • Publication number: 20210208500
    Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
    Type: Application
    Filed: March 19, 2021
    Publication date: July 8, 2021
    Applicants: ASML NETHERLANDS B.V., ASML HOLDING N.V.
    Inventors: David Ferdinand VLES, Erik Achilles ABEGG, Aage BENDIKSEN, Derk Servatius Gertruda BROUNS, Pradeep K. GOVIL, Paul JANSSEN, Maxim Aleksandrovich NASALEVICH, Arnoud Willem NOTENBOOM, Mária PÉTER, Marcus Adrianus VAN DE KERKHOF, Willem Joan VAN DER ZANDE, Pieter-Jan VAN ZWOL, Johannes Petrus Martinus Bernardus VERMEULEN, Willem-Pieter VOORTHUIJZEN, James Norman WILEY
  • Publication number: 20210208511
    Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.
    Type: Application
    Filed: November 22, 2017
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Hans Erik KATTOUW, Valerio ALTINI, Bearrach MOEST
  • Publication number: 20210208507
    Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.
    Type: Application
    Filed: May 14, 2019
    Publication date: July 8, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jen-Shiang WANG, Qian Zhao, Yunbo GUO, Yen-Wen LU, Mu FENG, Qiang ZHANG