Abstract: A method of operating a lithographic apparatus that comprises: a projection system configured to provide exposure radiation for patterning a substrate underneath the projection system; a first stage configured to support a first substrate; a second stage configured to support a second substrate; and a third stage accommodating a component that includes at least one of a sensor and a cleaning device; wherein the method comprises starting a pre-exposure scrum sweep operation after starting a substrate exchange operation; wherein during the pre-exposure scrum sweep operation, the third stage moves away from underneath the projection system while the second stage moves to underneath the projection system; wherein during the substrate exchange operation, the first substrate is unloaded from the first stage.

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Abstract: A method at tuning a lithographic process for a particular patterning device. The method includes: obtaining wavefront data relating to an objective lens of a lithographic apparatus, the wavefront data measured subsequent to an exposure of a pattern on a substrate using the particular patterning device; determining a pattern specific wavefront contribution from the wavefront data and a wavefront reference, the pattern specific wavefront contribution relating to the patterning device; and tuning the lithographic process for the particular patterning device using the pattern specific wavefront contribution.

Abstract: Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

Abstract: Described herein is a metrology system and a method for converting metrology data via a trained machine learning (ML) model. The method includes accessing a first (MD1) SEM data set (e.g., images, contours, etc.) acquired by a first scanning electron metrology (SEM) system (TS1) and a second (MD2) SEM data set acquired by a second SEM system (TS2), where the first SEM data set and the second SEM data set being associated with a patterned substrate. Using the first SEM data set and the second SEM data set as training data, a machine learning (ML) model is trained (P303) such that the trained ML model is configured to convert (P307) a metrology data set (310) acquired (P305) by the second SEM system to a converted data set (311) having characteristics comparable to metrology data being acquired by the first SEM system. Furthermore, measurements may be determined based on the converted SEM data.

Abstract: An assembly comprises a space configured for placing a medium to receive a first radiation for generating a second radiation. In operation, the second radiation propagates coaxially with the first radiation after the medium. The assembly further comprises an optical element after the medium for transmitting or reflecting the first radiation with a surface area. The assembly is configured such that, in operation, a cleaning gas is in contact with the surface area. A reactive medium is generated from at least a part of the cleaning gas by the second radiation for removing a contamination from the surface area.

Abstract: A method of correcting a metrology image for an out-of-band leakage signal contribution resultant from leakage of measurement radiation at suppressed wavelengths. The method includes: obtaining at least one correction image, the correction image obtained using measurement radiation with all wavelengths or wavelength bands maximally suppressed by a radiation modulation device; obtaining a metrology image using measurement radiation including modulated broadband radiation, modulated by the radiation modulation device to obtain a configured spectrum; and using the at least one correction image to correct the metrology image.

Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

Abstract: A method of manufacturing a nozzle for a droplet generator for a laser-produced plasma radiation source is disclosed. The method comprises disposing a glass capillary in a throughbore of a metal fitting, heating the metal fitting; and applying a pressure to the glass capillary such that the glass capillary conforms to the shape of, and forms a direct glass-to-metal seal with, the throughbore. Also disclosed is a nozzle for a droplet generator for a laser-produced plasma radiation source, and the radiation source itself, wherein the nozzle comprises the glass capillary for emitting fuel as droplets and the metal fitting for coupling the glass capillary to a body of the droplet generator, the glass capillary being conformed to a shape of a throughbore of the metal fitting, and wherein the glass capillary forms a direct glass-to-metal seal with the throughbore.

Abstract: A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.

Abstract: Methods and apparatus for determining a parameter of a structure fabricated in or on a substrate and compensated for a drift error. The methods comprising: illuminating, at a plurality of times, at least part of the structure with electromagnetic radiation, the at least part of the structure being at a first orientation; sensing, at the plurality of times, a plurality of average reflectances of the at least part of the structure; and determining, based on the plurality of average reflectances, an estimation of the parameter at one or more further times.

Abstract: A positioning device, including: a first positioning module arranged to support and position a first substrate, a second positioning module arranged to support and position a second substrate, a first positioning field in which the first and second positioning modules can be alternatingly positioned to carry out a first processing sequence, a second positioning field in which the first and second positioning modules can be alternatingly positioned to carry out a second processing sequence, wherein when one of the first and second positioning modules is carrying out or finishing the first processing sequence, the other of the first and second positioning modules has finished the second processing sequence and is positioned closer to the one of the first and second positioning modules.

Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

Abstract: Systems and methods of imaging a sample using a charged-particle beam apparatus are disclosed. The charged-particle beam apparatus may include a compound objective lens comprising a magnetic lens and an electrostatic lens, the magnetic lens comprising a cavity, and an electron detector located immediately upstream from a polepiece of the magnetic lens and inside the cavity of the magnetic lens. In some embodiments, deflectors may be located between the electron detector and the opening of the polepiece adjacent to the sample to achieve a large field of view. Electron distributions among the detectors can be manipulated without changing the landing energy by changing the potential of the control electrode(s) in the electrostatic objective lens. The electron source can be operated with several discrete potentials to cover different landing energies, while the potential difference between electron source and the extractor is fixed.

Abstract: A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams.

Abstract: A sensor may be used to measure a degree of tilt of a sample. The sensor may include an apparatus having a light source, first, second, and third optical elements, a lens, and an aperture. The first optical element may supply light from the light source toward the sample, and may supply light input into the first optical element from the sample toward the second optical element. The second optical element may supply light toward first and second sensing elements. An aperture may be arranged on a focal plane of the lens. A light beam incident on the first sensing element may be a reference beam.

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

Abstract: A patterning device for a lithographic apparatus arranged to project a pattern from the patterning device onto a substrate, the patterning device comprising: an imaging area having opposing first sides extending parallel to a scanning direction of the lithographic apparatus and opposing second sides extending perpendicularly to the scanning direction, and at least one sensing mark located adjacent to at least one second side of the imaging area; wherein the at least one sensing mark is located a predetermined distance in the scanning direction away from the at least one second side of the imaging area and extends a width in the scanning direction such that the at least one sensing mark, when projected onto the substrate, fits within a scribe line on the substrate.

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

Abstract: Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.