Abstract: A method of controlling an imaging process uses a qualified optical proximity correction (OPC) model, the process including obtaining an OPC model that is configured to model the behavior of OPC modifications to a pre-OPC design in a process for forming a pattern on a substrate using a post-OPC design in a patterning process, using the patterning process in a manufacturing environment, collecting process control data in substrates patterned using the patterning process in the manufacturing environment, storing the collected process control data in a database, analyzing, by a hardware computer system, the stored, collected process control data to verify that the OPC model is correcting pattern features within a selected threshold, and for pattern features falling outside the selected threshold, determining a modification to the imaging process to correct imaging errors.

Abstract: Method of exposing a substrate by a patterned radiation beam, comprising: —providing a radiation beam; —imparting the radiation beam by an array of individually controllable elements; —generating, from the radiation beam, a patterned radiation beam, by tilting the individually controllable elements between different positions about a tilting axis; —projecting the patterned radiation beam towards a substrate; —scanning a substrate across the patterned radiation beam in a scanning direction so as to expose the substrate to the patterned radiation beam, whereby the tilting axis of the individually controllable elements is substantially perpendicular to the scanning direction.

Abstract: The present invention provides a testing substrate (W) for estimating stress in production substrates due to a substrate support, said testing substrate having a support surface (SS) divided into predefined portions, wherein the predefined portions comprise at least one first portion (1) having a first coefficient of friction being substantially uniform across the at least one first portion, and at least one second portion (2) having a second coefficient of friction being substantially uniform across the at least one second portion, wherein the second coefficient of friction is different to the first coefficient of friction. The present invention also provides a method for estimating stress in a substrate due to a substrate support and a system for making such an estimation.

Abstract: A reticle transport system having a magnetically levitated transportation stage is disclosed. Such a system may be suitable for use in vacuum environments, for example, ultra-clean vacuum environments. A magnetic levitated linear motor functions to propel the transportation stage in a linear direction along a defined axis of travel and to magnetically levitate the transportation stage.

Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

Abstract: A method for representing control parameter data for controlling a lithographic apparatus during a scanning exposure of an exposure field on a substrate, the method including: obtaining a set of periodic base functions, each base function out of the set of periodic base functions having a different frequency and a period smaller than a dimension associated with the exposure field across which the lithographic apparatus needs to be controlled; obtaining the control parameter data; and determining a representation of the control parameter data using the set of periodic base functions.

Abstract: A method of determining a measurement recipe for measurement of in-die targets located within one or more die areas of an exposure field. The method includes obtaining first measurement data relating to measurement of a plurality of reference targets and second measurement data relating to measurement of a plurality of in-die targets, the targets having respective different overlay biases and measured using a plurality of different acquisition settings for acquiring the measurement data. One or more machine learning models are trained using the first measurement data to obtain a plurality of candidate measurement recipes, wherein the candidate measurement recipes include a plurality of combinations of a trained machine learned model and a corresponding acquisition setting; and a preferred measurement recipe is determined from the candidate measurement recipes using the second measurement data.

Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Abstract: An actuator, configured to move a first object with respect to a second object, that includes a first body having an annular ring, a second body, arranged movably with respect to the first body, having a longitudinal shaft at least partially disposed within the annular ring, and at least one spring device, arranged between the first body and the second body, wherein the at least one spring device is configured to guide relative movements between the first body and the second body in a range of movement, and the at least one spring device has two or more leaf springs, wherein each of the two or more leaf springs is connected to the first body and to the second body, and wherein at least one of the leaf springs is in a non-planar state when the spring device is in an equilibrium position.

Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.

Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.

Abstract: Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

Abstract: Assessment systems and methods are disclosed. In one arrangement, an effect of electrode distortion in an objective lens array is compensated. An electrode distortion is adjusted by varying an electrostatic field in the objective lens array. The adjustment is such as to compensate for an effect of electrode distortion on sub-beams of a multi-beam impinging on a sample. A sub-beam is refocused in response to the variation in electrostatic field in the objective lens array. The adjusting and the refocusing comprises changing potentials applied to at least two electrodes of the objective lens array.

Abstract: Systems and methods of feature-based cell extraction. The methods include obtaining data representative of a layout, wherein the layout includes a pattern region having no vertices, extracting unit cells from the pattern region having no vertices, identifying, using the unit cells, a set of regions of the layout matching the unit cells, and generating, using the unit cells, a hierarchy for the set of regions. In some embodiments the pattern regions have oblique angle features or have no vertices of features. The pattern regions can have a feature including a feature slope, a horizontal or a vertical pitch, or a line-space feature. In some embodiments the hierarchy is optimized using a linear optimization and can be provided for use in modeling, OPC, defect inspection, defect prediction, or SMO.

Abstract: A dark field metrology device includes an objective lens arrangement and a zeroth order block to block zeroth order radiation. The objective lens arrangement directs illumination onto a specimen to be measured and collects scattered radiation from the specimen, the scattered radiation including zeroth order radiation and higher order diffracted radiation. The dark field metrology device is operable to perform an illumination scan to scan illumination over at least two different subsets of the maximum range of illumination angles; and simultaneously perform a detection scan which scans the zeroth order block and/or the scattered radiation with respect to each other over a corresponding subset of the maximum range of detection angles during at least part of the illumination scan.

Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

Abstract: An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.