Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.

Abstract: In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.

Abstract: An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

Abstract: A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

Abstract: Disclosed is method of optimizing bandwidth of measurement illumination for a measurement application, and an associated metrology apparatus. The method comprises performing a reference measurement with reference measurement illumination having a reference bandwidth and performing one or more optimization measurements, each of said one or more optimization measurements being performed with measurement illumination having a varied candidate bandwidth. The one or more optimization measurements are compared with the reference measurement; and an optimal bandwidth for the measurement application is selected based on the comparison.

Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system comprises a mirror having an actuator for positioning the mirror and/or configuring the shape of the mirror, the actuator also providing active damping to the mirror, and a controller for generating actuator control signals for control of said actuator(s). A first coordinate system is used for control of said actuator(s) when positioning said mirror and/or configuring the shape of said mirror and a second coordinate system is used for control of said actuator(s) when providing active damping to said mirror.

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

Abstract: An electron beam transport system for controlling the position of two different electron beams comprises: a main electron beam transport module; a first input electron beam transport module; a second input electron beam transport module; and a controller. The main electron beam transport module comprises a beam monitoring device disposed at a measurement position. The first input electron beam transport module comprises a first actuator for applying a perturbation to a transverse position of a first electron beam at a first actuation point. The second input electron beam transport module comprises a second actuator for applying a perturbation to a transverse position of a second electron beam at a second actuation point. The controller is operable to receive a signal from the beam monitoring device and to send control signals to the first actuator and the second actuator.

Abstract: An apparatus for determining a characteristic of a feature of an object comprises: a measurement radiation source; a measurement radiation delivery system; a measurement system; a pump radiation source; and a pump radiation delivery system. The measurement radiation source is operable to produce measurement radiation and the measurement radiation delivery system is operable to irradiate at least a part of a top surface of the object with the measurement radiation. The measurement system is operable to receive at least a portion of the measurement radiation scattered from the top surface and is further operable to determine a characteristic of the feature of the object from at least a portion of the measurement radiation scattered from the top surface.

Abstract: An optical system (OS) for focusing a beam of radiation (B) on a region of interest in a metrology apparatus is described. The beam of radiation (B) comprises radiation in a soft X-ray or Extreme Ultraviolet spectral range. The optical system (OS) comprises a first stage (S1) for focusing the beam of radiation at an intermediate focus region. The optical system (OS) comprises a second stage (S2) for focusing the beam of radiation from the intermediate focus region onto the region of interest. The first and second stages each comprise a Kirkpatrick-Baez reflector combination. At least one reflector comprises an aberration-correcting reflector.

Abstract: An inspection substrate for inspecting a component, such as a liquid confinement system, of an apparatus for processing production substrates is discussed. The inspection substrate includes a body having dimensions similar to a production substrate so that the inspection substrate is compatible with the apparatus, an illumination device, such as light emitting diodes, embedded in the body, a sensor, such as an imaging device or a pressure sensor, that is embedded in the body and configured to generate inspection information, such as image data, relating to a parameter of the component of the apparatus proximate to the inspection substrate, and a storage device embedded in the body and configured to store the inspection information.

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

Abstract: Online calibration of laser performance as a function of the repetition rate at which the laser is operated is disclosed. The calibration can be periodic and carried out during a scheduled during a non-exposure period. Various criteria can be used to automatically select the repetition rates that result in reliable in-spec performance. The reliable values of repetition rates are then made available to the scanner as allowed values and the laser/scanner system is then permitted to use those allowed repetition rates.

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

Abstract: In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

Abstract: A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.