Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.

Abstract: A position measurement system configured to measure a position of an object, the system including: a displacement interferometer having a first capture range; a time-of-flight sensor having a second capture range that is larger than the first capture range and having an inaccuracy that is smaller than the first capture range; and a processing unit, wherein the position measurement system has a zeroing mode in which the processing unit is configured to determine a coarse position of the object within the second capture range based on an output from the time-of-flight sensor, and in which the processing unit is configured to determine a fine position of the object based on the determined coarse position and an output from the displacement interferometer.

Abstract: A method and a computer program product that relates to lithographic apparatuses and, processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product includes determining contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process, wherein the results are measured using a plurality of different substrate measurement recipes.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: Disclosed herein is a computer-implemented method of image simulation for a device manufacturing process, the method comprising: identifying regions of uniform optical properties from a portion or an entirety of a substrate or a patterning device, wherein optical properties are uniform within each of the regions; obtaining an image for each of the regions, wherein the image is one that would be formed from the substrate if the entirety of the substrate or the patterning device has the same uniform optical properties as that region; forming a stitched image by stitching the image for each of the regions according to locations of the regions in the portion or the entirety of the substrate of the patterning device; forming an adjusted image by applying adjustment to the stitched image for at least partially correcting for or at least partially imitating an effect of finite sizes of the regions.

Abstract: A laser system comprises a seed module (33) operable to emit a pulse of a first laser beam followed by a pulse of a second laser beam and a plurality of amplification chambers each comprising a gain medium having a gain, wherein the plurality of amplification chambers are arranged to receive the pulse of the first laser beam (45) and amplify the first laser beam in a second order (PA3, PA2, PA1, PA0) and wherein the plurality of amplification chambers are further arranged to receive the pulse of the second laser beam (41) and amplify the second laser beam in a first order (PA0, PA1, PA2, PA3) which is the reverse of the second order. Saturation powers and small signal gain coefficients of the gain media are selected such that the pulse of the first laser beam experiences a total amplification which is less than the total amplification experienced by the pulse of the second laser beam.

Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A functional relationship between local height deviations across a substrate and focus information, such as a determined focus amount, is determined for a substrate, e.g., a reference substrate. Height deviations are subsequently measured for another substrate, e.g. a production substrate. The height deviations for the subsequent substrate and the functional relationship are used to determine predicted focus information for the subsequent substrate. The predicted focus information is then used to control the lithographic apparatus to apply a product pattern to the product substrate.

Abstract: A motor assembly includes linear motors, each linear motor configured to generate a driving force in a driving direction and each having a first electromagnetic assembly and a second electromagnetic assembly, configured to co-operate with the first electromagnetic assembly, for generating the driving force, wherein the first electromagnetic assembly and the second electromagnetic assembly face each other and define a gap between each other in a direction perpendicular to the driving direction. A first interface connects the first electromagnetic assemblies to a common member. A second interface connects the second electromagnetic assemblies to the object to be driven.

Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (?1, ?2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including a main body having a main body surface; a plurality of burls projecting from the main body surface to support the substrate spaced apart from the main body surface; and a liquid control structure provided in a peripheral region of the main body surface and configured to cause liquid to preferentially flow toward the periphery of the main body surface.

Abstract: A clear-out tool is described, the clear-out tool being configured to at least partially remove a masking layer from a target area of an object using a laser beam. The clear-out tool includes a barrier member configured to be arranged above a surface of the object containing the target area and configured to contain a liquid in a space next to the target area or surrounding the target area.

Abstract: A substrate table for an immersion system having a projection system arranged to project an image onto a substrate and a liquid confinement system configured to confine an immersion liquid to a space between the projection system and the substrate, the substrate table including: a substrate holder configured to hold a substrate; and a current control device arranged to reduce an electric current flowing between the substrate and the substrate holder while the immersion liquid is confined to the space.

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract: A device and method are disclosed in which a source material delivery system can be reoriented so that the path of the source material is not directly towards an irradiation region in operating conditions in which the path is expected to be unpredictable. A shroud provided to protect the flow of source material from being disrupted is segmented so with one part of the shroud being movable with respect to another part of the shroud so that the movable part can avoid interfering with the path of the source material when it is not directly towards the irradiation region.

Abstract: A measurement system for measuring a position and/or displacement of an object (40), the measurement system comprising a sensor (20) and a target (45), the sensor comprising an electromagnet (21); a driving circuit (24) configured to drive the electromagnet to generate an alternating magnetic field (AMF); a measuring circuit (25) configured to measure an electrical impedance parameter of the electromagnet; the target being located on a surface (41) of the object that faces the sensor, wherein the target comprises a graphene layer (46), and wherein, in use, when the alternating magnetic field interacts with the target, the alternating magnetic field changes (RMF), altering the electrical impedance parameter of the electromagnet.

Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

Abstract: A radiation receiving system for an inspection apparatus, used to perform measurements on target structures on lithographic substrates as part of a lithographic process, comprises a spectrometer with a number of inputs. The radiation receiving system comprises: a plurality of inputs, each input being arranged to provide radiation from a target structure; a first optical element operable to receive radiation from each of the plurality of inputs; a second optical element operable to receive radiation from the first optical element and to scatter the radiation; and a third optical element operable to direct the scattered radiation onto a detector. The second optical element may for example be a reflective diffraction grating that diffracts incoming radiation into an output radiation spectrum.

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and a sensor is filled with a liquid.

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.