Patents Assigned to ASML Netherlands
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Patent number: 10691863Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.Type: GrantFiled: September 26, 2016Date of Patent: June 23, 2020Assignee: ASML Netherlands B.V.Inventors: Peter Ten Berge, Everhardus Cornelis Mos, Richard Johannes Franciscus Van Haren, Peter Hanzen Wardenier, Erik Jensen
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Patent number: 10691030Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.Type: GrantFiled: November 16, 2018Date of Patent: June 23, 2020Assignee: ASML Netherlands B.V.Inventors: Frank Staals, Eric Jos Anton Brouwer, Carlo Cornelius Maria Luijten, Jean-Pierre Agnes Henricus Marie Vaessen
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Patent number: 10691029Abstract: A method including computing a multi-variable cost function, the multi-variable cost function representing a metric characterizing a degree of matching between a result when measuring a metrology target structure using a substrate measurement recipe and a behavior of a pattern of a functional device, the metric being a function of a plurality of design variables including a parameter of the metrology target structure, and adjusting the design variables and computing the cost function with the adjusted design variables, until a certain termination condition is satisfied.Type: GrantFiled: June 1, 2017Date of Patent: June 23, 2020Assignee: ASML Netherlands B.V.Inventors: Ning Gu, Daimian Wang, Jen-Shiang Wang
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Patent number: 10692696Abstract: A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.Type: GrantFiled: May 27, 2014Date of Patent: June 23, 2020Assignee: ASML NETHERLANDS B.V.Inventors: Teunis Van De Peut, Marco Jan-Jaco Wieland
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Patent number: 10690995Abstract: A supercontinuum radiation source for an alignment mark measurement system comprises: a radiation source; illumination optics; a plurality of waveguides; and collection optics. The radiation source is operable to produce a pulsed radiation beam. The illumination optics is arranged to receive the pulsed pump radiation beam and to form a plurality of pulsed sub-beams, each pulsed sub-beam comprising a portion of the pulsed radiation beam. Each of the plurality of waveguides is arranged to receive at least one of the plurality of pulsed sub-beams beam and to broaden a spectrum of that pulsed sub-beam so as to generate a supercontinuum sub-beam. The collection optics is arranged to receive the supercontinuum sub-beam from each of the plurality of waveguides and to combine them so as to form a supercontinuum radiation beam.Type: GrantFiled: June 1, 2017Date of Patent: June 23, 2020Assignee: ASML Netherlands B.V.Inventors: Nitish Kumar, Simon Reinald Huisman
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Patent number: 10691031Abstract: A method, includes illuminating a structure of a metrology target with radiation having a linear polarization in a first direction, receiving radiation redirected from the structure to a polarizing element, wherein the polarizing element has a polarization splitting axis at an angle to the first direction, and measuring, using the sensor system, an optical characteristic of the redirected radiation.Type: GrantFiled: August 29, 2018Date of Patent: June 23, 2020Assignee: ASML Netherlands B.V.Inventor: Sergey Tarabrin
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Publication number: 20200193080Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.Type: ApplicationFiled: November 13, 2017Publication date: June 18, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Venugopal VELLANKI, Been-Der CHEN
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Publication number: 20200192229Abstract: A method and a computer program product that relates to lithographic apparatuses and, processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product includes determining contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process, wherein the results are measured using a plurality of different substrate measurement recipes.Type: ApplicationFiled: November 22, 2016Publication date: June 18, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Scott Anderson MIDDLEBROOKS, Omer Abubaker Omer ADAM, Adrianus Cornelis Matheus KOOPMAN, Henricus JohannesLambertus MEGENS, Arie Jeffrey DEN BOEF
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Publication number: 20200192231Abstract: The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.Type: ApplicationFiled: December 12, 2019Publication date: June 18, 2020Applicant: ASML Netherlands B.V.Inventors: Hugo Augustinus Joseph CRAMER, Hiiko Dirk BOS, Erik Johan KOOP, Armand Eugene Albert KOOLEN, Han-Kwang NIENHUYS, Alessandro POLO, Jin LIAN, Arie Jeffrey DEN BOEF
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Publication number: 20200192217Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.Type: ApplicationFiled: February 24, 2020Publication date: June 18, 2020Applicant: ASML Netherlands B.V.Inventors: Derk Servatius Gertruda Brouns, Dennis De Graaf, Robertus Comelis Martinus De Kruif, Paul Janssen, Mathias Kruizinga, Amoud Willem Notenboom, Daniel Andrew Smith, Beatrijs Louise Marie-Josep Katrien Verbrugge, James Norman Wiley
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Publication number: 20200192230Abstract: A technique of measuring a parameter of a patterning process is disclosed. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.Type: ApplicationFiled: December 10, 2019Publication date: June 18, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Sergei SOKOLOV, Sergey TARABRIN, Su-Ting CHENG, Armand Eugene Albert KOOLEN, Markus Franciscus Antonius EURLINGS, Koenraad Remi Andre Maria SCHREEL
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Publication number: 20200189192Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Yu CAO, Wenjin SHAO, Ronaldus Johannes Gijsbertus GOOSSENS, Jun YE, James Patrick KOONMEN
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Publication number: 20200191552Abstract: A position measurement system configured to measure a position of an object, the system including: a displacement interferometer having a first capture range; a time-of-flight sensor having a second capture range that is larger than the first capture range and having an inaccuracy that is smaller than the first capture range; and a processing unit, wherein the position measurement system has a zeroing mode in which the processing unit is configured to determine a coarse position of the object within the second capture range based on an output from the time-of-flight sensor, and in which the processing unit is configured to determine a fine position of the object based on the determined coarse position and an output from the displacement interferometer.Type: ApplicationFiled: February 6, 2018Publication date: June 18, 2020Applicant: ASML Netherlands B.V.Inventor: Maarten Jozef JANSEN
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Patent number: 10684557Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A functional relationship between local height deviations across a substrate and focus information, such as a determined focus amount, is determined for a substrate, e.g., a reference substrate. Height deviations are subsequently measured for another substrate, e.g. a production substrate. The height deviations for the subsequent substrate and the functional relationship are used to determine predicted focus information for the subsequent substrate. The predicted focus information is then used to control the lithographic apparatus to apply a product pattern to the product substrate.Type: GrantFiled: April 4, 2017Date of Patent: June 16, 2020Assignee: ASML Netherlands B.V.Inventors: Rene Marinus Gerardus Johan Queens, Emil Peter Schmitt-Weaver
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Patent number: 10685158Abstract: Disclosed herein is a computer-implemented method of image simulation for a device manufacturing process, the method comprising: identifying regions of uniform optical properties from a portion or an entirety of a substrate or a patterning device, wherein optical properties are uniform within each of the regions; obtaining an image for each of the regions, wherein the image is one that would be formed from the substrate if the entirety of the substrate or the patterning device has the same uniform optical properties as that region; forming a stitched image by stitching the image for each of the regions according to locations of the regions in the portion or the entirety of the substrate of the patterning device; forming an adjusted image by applying adjustment to the stitched image for at least partially correcting for or at least partially imitating an effect of finite sizes of the regions.Type: GrantFiled: November 24, 2015Date of Patent: June 16, 2020Assignee: ASML Netherlands B.V.Inventor: Peng Liu
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Patent number: 10686290Abstract: A laser system comprises a seed module (33) operable to emit a pulse of a first laser beam followed by a pulse of a second laser beam and a plurality of amplification chambers each comprising a gain medium having a gain, wherein the plurality of amplification chambers are arranged to receive the pulse of the first laser beam (45) and amplify the first laser beam in a second order (PA3, PA2, PA1, PA0) and wherein the plurality of amplification chambers are further arranged to receive the pulse of the second laser beam (41) and amplify the second laser beam in a first order (PA0, PA1, PA2, PA3) which is the reverse of the second order. Saturation powers and small signal gain coefficients of the gain media are selected such that the pulse of the first laser beam experiences a total amplification which is less than the total amplification experienced by the pulse of the second laser beam.Type: GrantFiled: January 18, 2016Date of Patent: June 16, 2020Assignee: ASML Netherlands B.V.Inventor: Olga Alexandrovna Sytina
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Patent number: 10684558Abstract: A motor assembly includes linear motors, each linear motor configured to generate a driving force in a driving direction and each having a first electromagnetic assembly and a second electromagnetic assembly, configured to co-operate with the first electromagnetic assembly, for generating the driving force, wherein the first electromagnetic assembly and the second electromagnetic assembly face each other and define a gap between each other in a direction perpendicular to the driving direction. A first interface connects the first electromagnetic assemblies to a common member. A second interface connects the second electromagnetic assemblies to the object to be driven.Type: GrantFiled: September 27, 2017Date of Patent: June 16, 2020Assignee: ASML Netherlands B.V.Inventors: Pim Jozef Hendrik Duijsens, Antonius Franciscus Johannes De Groot
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Patent number: 10684551Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.Type: GrantFiled: April 23, 2019Date of Patent: June 16, 2020Assignees: Carl Zeiss SMT GmbH, ASML Netherlands B.V.Inventors: Norman Baer, Ulrich Loering, Oliver Natt, Gero Wittich, Timo Laufer, Peter Kuerz, Guido Limbach, Stefan Hembacher, Holger Walter, Yim-Bun-Patrick Kwan, Markus Hauf, Franz-Josef Stickel, Jan Van Schoot
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Patent number: 10684554Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.Type: GrantFiled: July 15, 2019Date of Patent: June 16, 2020Assignee: ASML Netherlands B.V.Inventors: Bob Streefkerk, Sjoerd Nicolaas Lambertus Donders, Roelof Frederik De Graaf, Christiaan Alexander Hoogendam, Martinus Hendrikus Antonius Leenders, Jeroen Johannes Sophia Maria Mertens, Michel Riepen
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Publication number: 20200185281Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.Type: ApplicationFiled: February 14, 2020Publication date: June 11, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Adriaan Johan VAN LEEST, Anagnostis TSIATMAS, Paul Christiaan HINNEN, Elliott Gerard MC NAMARA, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER