Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

Abstract: A method is described for measuring a moving property of a target. The method includes: forming a remaining plasma that at least partially coincides with an extended target region, the remaining plasma being a plasma formed from an interaction between a prior target and a prior radiation pulse in a target space; releasing a current target along a trajectory toward the target space that is at least partly overlapping the extended target region; determining one or more moving properties of the current target when the current target is within the extended target region and after a prior and adjacent target has interacted with a prior radiation pulse in the target space; and if any of the determined one or more moving properties of the current target are outside an acceptable range, then adjusting one or more characteristics of a radiation pulse directed toward the target space.

Abstract: A projection system model is configured to predict optical aberrations of a projection system based upon a set of projection system characteristics and to determine and output a set of optical element adjustments based upon a merit function. The merit function comprises a set of parameters and corresponding weights. The method comprises receiving an initial merit function and executing an optimization algorithm to determine a second merit function. The optimization algorithm scores different merit functions based upon projection system characteristics of a projection system adjusted according to the output of the projection system model using a merit function having that set of parameters and weights.

Abstract: Disclosed is a suppression filter having a profile defining at least two reflective surface levels, each reflected surface level being separated by a separation distance. The separation distance is such that the reflective suppression filter is operable to substantially prevent specular reflection of radiation at a first wavelength and at a second wavelength incident on said reflective suppression filter. Also disclosed is a radiation collector, radiation source and lithographic apparatus comprising such a suppression filter, and to a method of determining a separation distance between at least two reflective surface levels of a suppression filter.

Abstract: A method is described for measuring a moving property of a target. The method includes: forming a remaining plasma that at least partially coincides with an extended target region, the remaining plasma being a plasma formed from an interaction between a prior target and a prior radiation pulse in a target space; releasing a current target along a trajectory toward the target space that is at least partly overlapping the extended target region; determining one or more moving properties of the current target when the current target is within the extended target region and after a prior and adjacent target has interacted with a prior radiation pulse in the target space; and if any of the determined one or more moving properties of the current target are outside an acceptable range, then adjusting one or more characteristics of a radiation pulse directed toward the target space.

Abstract: The invention relates to a setpoint generator for moving a patterning device of a lithographic apparatus, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the setpoint generator comprises a finite number of movement profiles for the patterning device, and wherein the setpoint generator is configured to select one of the finite number of movement profiles based on a desired movement profile and to output the selected movement profile as a setpoint for the patterning device.

Abstract: Feedthrough device (50; 150), for forming a hermetic seal around signal conductors in a signal conductor group (60; 160) with a group width. The device comprises a slotted member (52; 152) and a base (62; 162). The base defines a through hole (65) that extends entirely through the base along a feedthrough direction (X), and is adapted to accommodate the slotted member. The slotted member defines first and second surfaces (53, 54; 153, 154) on opposite sides associated with the feedthrough direction, and a side surface (55, 56; 155, 156) facing transverse to the feedthrough direction. The slotted member comprises a slot (58; 158), which extends along the feedthrough direction through the slotted member, and opens into the first and second surfaces and into a longitudinal opening (59; 159) along the side surface. The slot extends transversely into the slotted member up to a slot depth at least equal to the signal conductor group width.

Abstract: The invention relates to a control system comprising a controller arranged to provide an output signal on the basis of an input signal. The controller comprises a linear integrator, a linear gain and a selector. The linear integrator is arranged to provide a first control signal. The linear gain is in parallel to the linear integrator and is arranged to provide a second control signal. The selector is arranged to switch between an integrator mode in which the first control signal is used as the output signal of the controller and a gain mode in which the second control signal is used as the output signal of the controller. The selector is arranged to switch to the integrator mode when the value of the second control signal passes zero, and to switch to the gain mode when: eu<kh?1u2, wherein e is the input signal of the controller, u is the output signal of the controller, and kh is the gain of the linear gain.

Abstract: A method includes providing a target material that comprises a component that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first beam of radiation toward the target material to deliver energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second beam of radiation toward the modified target, the second beam of radiation converting at least part of the modified target to plasma that emits EUV light; measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first beam of radiation; and controlling an amount of radiant exposure delivered to the target material from the first beam of radiation based on the one or more measured characteristics to within a predetermined range of energies.

Abstract: A method includes obtaining a sub-layout having an area that is a performance limiting spot, adjusting colors of patterns in the area, and determining whether the area is still a performance limiting spot. Another method includes decomposing patterns in a design layout into multiple sub-layouts; determining for at least one area in one of the sub-layouts, the likelihood of that a figure of merit is beyond its allowed range; and if the likelihood is above a threshold, that one sub-layout has a performance limiting spot. Another method includes: obtaining a design layout having a first group of patterns and a second group of patterns, wherein colors of the first group of patterns are not allowed to change and colors of the second group of patterns are allowed to change; and co-optimizing at least the first group of patterns, the second group of patterns and an illumination of a lithographic apparatus.

Abstract: A method of adjusting a metrology apparatus, the method including: spatially dividing an intensity distribution of a pupil plane of the metrology apparatus into a plurality of pixels; and reducing an effect of a structural asymmetry in a target on a measurement by the metrology apparatus on the target, by adjusting intensities of the plurality of pixels.

Abstract: A metrology apparatus for determining a characteristic of interest of a structure on a substrate, the structure having diffractive properties, the apparatus comprising: focusing optics configured to focus illumination radiation comprising a plurality of wavelengths onto the structure; a first detector configured to detect at least part of the illumination radiation which has been diffracted from the structure; and additional optics configured to produce, on at least a portion of the first detector, a wavelength-dependent spatial distribution of different wavelengths of the illumination radiation which has been diffracted from the structure, wherein the first detector is arranged to detect at least a non-zero diffraction order of the illumination radiation which has been diffracted from the structure.

Abstract: A fluid handling structure for a lithographic apparatus configured to contain immersion fluid to a region, the fluid handling structure having, at a boundary of a space: at least one gas knife opening in a radially outward direction of the space; and at least one gas supply opening in the radially outward direction of the at least gas knife opening relative to the space. The gas knife opening and the gas supply opening both provide substantially pure CO2 gas so as to provide a substantially pure CO2 gas environment adjacent to, and radially outward of, the space.

Abstract: Disclosed is a method of measuring a focus parameter relating to formation of a structure using a lithographic process, and associated metrology device. The method comprises obtaining measurement data relating to a cross-polarized measurement of said structure; and determining a value for said focus parameter based on the measurement data.

Abstract: A method of processing a substrate includes: providing a substrate with a layer of photosensitive material on a surface of the substrate; and removing at least part of the photosensitive material from around an outer edge of the layer of photosensitive material so as to generate an edge, having a radial width, around the layer of photosensitive material remaining on the surface of the substrate, wherein the photosensitive material varies in thickness forming a thickness profile across the radial width and the removing is controlled so as to generate variation in the thickness profile along the length of the edge, and/or wherein the removing is controlled so as to generate a rough edge around the layer of photosensitive material remaining on the surface of the substrate.

Abstract: A method including obtaining a plurality of gauges of a plurality of gauge patterns for a patterning process, each gauge pattern configured for measurement of a parameter of the patterning process when created as part of the patterning process, and creating a selection of one or more gauges from the plurality of gauges, wherein a gauge is included in the selection provided the gauge and all the other gauges, if any, of the same gauge pattern, or all of the one or more gauges of the same gauge pattern linked to the gauge, pass a gauge printability check.

Abstract: An optical source for an extreme ultraviolet (EUV) photolithography tool includes a light-generation system including a light-generation module; an optical amplifier including a gain medium associated with a gain band, the gain medium configured to amplify light having a wavelength in the gain band; and a wavelength-based optical filter system on a beam path between the light-generation module and the optical amplifier, the wavelength-based optical filter system including at least one optical element configured to allow light having a wavelength in a first set of wavelengths to propagate on the beam path and to remove light having a wavelength in a second set of wavelengths from the beam path, the first set of wavelengths and the second set of wavelengths including different wavelengths in the gain band of the optical amplifier.

Abstract: A target material is provided at a target location, the target material including a material that emits extreme ultraviolet light when converted to plasma, and the target material extending in a first extent along a first direction and in a second extent along a second direction; an amplified light beam is directed along a direction of propagation toward the target location; and the amplified light beam is focused in a focal plane, where the target location is outside of the focal plane and an interaction between the amplified light beam and the target material converts at least part of the target material to plasma that emits EUV light.

Abstract: A lithographic apparatus includes a patterning device support to support a patterning device, the patterning device system including a moveable structure movably arranged relative to an object, a patterning device holder movably arranged relative to the movable structure to hold the patterning device, an actuator to move the movable structure relative to the object, and an ultra short stroke actuator to move the patterning device holder with respect to the movable structure; a substrate support to hold a substrate; a projection system to project a patterned radiation beam onto a target portion of the substrate; a transmission image sensor for measuring a position of the patterned radiation beam downstream of the projection system; and a calibrator for determining a relationship between magnitude of an applied control signal to the ultra short stroke actuator and resulting change in position of the patterned radiation beam and/or patterning device holder and/or patterning device.

Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.