Abstract: In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.

Abstract: Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.

Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.

Abstract: In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be exposed to radiation when immersed in liquid (e.g., under the same conditions as the substrate will be exposed to radiation). By having a surface of an absorption element of the sensor, that is to be in contact with liquid, formed of no more than one metal type, long life of the sensor may be obtained.

Abstract: An apparatus and method for performing a measurement operation on a substrate in accordance with one or more substrate alignment models. The one or more substrate alignment models are selected from a plurality of candidate substrate alignment models. The apparatus, which may be a lithographic apparatus, includes an external interface which enables selection of the substrate alignment model(s) and/or alteration of the substrate alignment model(s) prior to the measurement operation.

Abstract: A lithographic method for measuring a position of a target grating with a mask sensor apparatus which comprises a plurality of detector modules each comprising a diffraction grating located at a mask side of a projection system of a lithographic apparatus and an associated detector, the method comprising a first step of measuring first intensities of a combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along a first direction; a second step of displacing the mask sensor apparatus relative to the target grating in a second direction, wherein a size of the relative displacement is proportional to a spatial frequency of a potential error; and a third step of measuring second intensities of the combination of diffraction orders diffracted from the target grating while the mask sensor apparatus is moved relatively to the target grating along the first direction.

Abstract: An optical system comprising: an illumination system configured, to form a periodic illumination mode comprising radiation in a pupil plane of the optical system having a spatial intensity profile which is periodic in at least one direction, a measurement system configured to measure a dose of radiation which is received in an field plane of the optical system as a function of position in the field plane, and a controller configured to: select one or more spatial frequencies in the field plane at which variation in the received dose of radiation as a function of position is caused by speckle, and determine a measure of the variation of the received dose of radiation as a function of position at the selected one or more spatial frequencies, the measure of the variation in the received dose being indicative of speckle in the field plane.

Abstract: A target structure such as an alignment mark on a semiconductor substrate becomes obscured by an opaque layer so that it cannot be located by an alignment sensor. A position for the mark is determined using an edge position sensor and relative position information that defines the position of the mark relative to one or more edge portions of the substrate is stored prior to formation of the opaque layer. A window can be opened in the opaque layer, based on the determined position. After revealing the target structure, the alignment sensor can, if desired, measure more accurately the position of the target structure, for use in controlling a further lithographic step. The edge position sensor may be a camera having an angle-selective behavior. The edge position sensor may be integrated within the alignment sensor hardware.

Abstract: A method and apparatus to measure overlay from images of metrology targets, images obtained using acoustic waves, for example images obtained using an acoustic microscope. The images of two targets are obtained, one image using acoustic waves and one image using optical waves, the edges of the images are determined and overlay between the two targets is obtained as the difference between the edges of the two images.

Abstract: A metrology apparatus is disclosed that has an optical system to focus radiation onto a structure and directs redirected radiation from the structure to a detection system. The optical system applies a plurality of different offsets of an optical characteristic to radiation before and/or after redirected by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution. The detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution. Each radiation intensity corresponds to a different one of the plurality of different offsets.

Abstract: An inspection apparatus or lithographic apparatus includes an optical system and a detector. The optical system includes a non-linear prismatic optic. The optical system is configured to receive zeroth and first diffraction order beams reflected from a diffraction target and separate first and second polarizations of each diffraction order beam. The detector is configured to simultaneously detect first and second polarizations of each of the zeroth and first diffraction order beams. Based on the detected first and second polarizations of one or more diffraction orders, an operational parameter of a lithographic apparatus can be adjusted to improve accuracy or precision in the lithographic apparatus. The optical system can include a plurality of non-linear prismatic optics. For example, the optical system can include a plurality of Wollaston prisms.

Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.

Abstract: A method including: obtaining a logistic mathematical model predicting the formation of a physical structure created using a patterning process; evaluating the logistic mathematical model to predict formation of a part of the physical structure and generate an output; and adapting, based on the output, an aspect of the patterning process.

Abstract: Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

Abstract: A substrate processing apparatus includes a substrate loading device configured to load a substrate in a predetermined orientation relative to a grid, having a X-axis and an orthogonal Y-axis, associated with a layout of fields on the substrate; and corrective elements configured to enable local correction of a characteristic of a process performed on a substrate, wherein the corrective elements are arranged along at least one axis having a direction other than parallel to the X-axis or the Y-axis of the grid.

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

Abstract: A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

Abstract: A Lorentz actuator includes: a magnet arrangement; a coil arrangement; and a current controller for supplying a current to the coil arrangement; wherein the magnet and coil arrangement are moveable relative to each other in a main direction, wherein the coil arrangement has a first and second coil portion that are separately operable by the current controller, such that when the same current is supplied to the first coil portion as is supplied to the second coil portion, Lorentz forces generated in the main direction by the first and second coil portions are also the same, and wherein the current controller is configured to supply a current to the first and second coil portions with a phase difference in order to compensate for parasitic reluctance and/or Lorentz forces in an auxiliary direction perpendicular to the main direction.

Abstract: A vessel having a seal that is protected from the liquid material within the vessel by a volume of gas. The vessel has a partition that divides the vessel into two volume spaces such that the seal that is in gaseous communication with the first volume space is protected from the liquid material in the second volume space by a volume of gas in the first volume space.

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.