Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

Abstract: A radiation sensor apparatus for determining a position and/or power of a radiation beam, the radiation sensor apparatus including a chamber to contain a gas, one or more sensors, and a processor. The chamber has a first opening and a second opening such that a radiation beam can enter the chamber through the first opening, propagate through the chamber generally along an axis, and exit the chamber through the second opening. Each of the one or more sensors is arranged to receive and detect radiation emitted from a region of the chamber around the axis. The processor is operable to use the radiation detected by the one or more sensors to determine a position and/or power of the radiation beam.

Abstract: An apparatus, system, and method cool a patterning device by supplying a non-uniform gas flow. The apparatus and system include a gas supply structure that supplies a gas flow across the first surface of the patterning device. The gas supply structure includes a gas supply nozzle specially configured to create a non-uniform gas flow distribution. A greater volume or velocity of the gas flow is directed to desired portion of the patterning device.

Abstract: Steering system for a droplet generator in a EUV system. The steering system permits controlled positioning of a droplet release point of the droplet generator. A movable member holding the droplet generator is coupled to stationary elements of the EUV system through a coupling system having a first subsystem that constrains lateral translation of the movable member, and a second subsystem that controls a relative inclination of the movable member. The first and second subsystems preferably include one or a combination of flexures that permit highly precise and repeatable positioning.

Abstract: A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.

Abstract: Disclosed herein are several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift , tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing assist features onto or adjusting positions and/or shapes existing assist features in the portion. Adjusting the illumination source and/or the assist features may be by an optimization algorithm.

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

Abstract: A fluid handling structure for a lithographic apparatus is disclosed, the fluid handling structure successively has, at a boundary from a space configured to contain immersion fluid to a region external to the fluid handling structure: an elongate opening or a plurality of openings arranged in a first line that, in use, are directed towards a substrate and/or a substrate table configured to support the substrate; a gas knife device having an elongate aperture in a second line; and an elongate opening or a plurality of openings adjacent the gas knife device.

Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.

Abstract: A radiation source apparatus comprising: a container for being pressurized with a gaseous medium in which plasma which emits plasma emitted radiation is generated following excitation of the gaseous medium by a driving radiation, wherein said container is operable substantially to remove radiation with a wavelength of 10-400 nm from said plasma emitted radiation before said plasma emitted radiation exits said container as output radiation. In an embodiment the container comprises: an inlet radiation transmitting element operable to transmit said driving radiation from outside said container to inside said container, and an outlet radiation transmitting element operable to transmit at least some of said plasma emitted radiation from inside said container to outside said container as output radiation; wherein at least one of said inlet and outlet radiation transmitting elements comprises a plane parallel plate.

Abstract: A process of calibrating a model, the process including: obtaining training data including: scattered radiation information from a plurality of structures, individual portions of the scattered radiation information being associated with respective process conditions being characteristics of a patterning process of the individual structures; and calibrating a model with the training data by determining a ratio relating a change in one of the process characteristics to a corresponding change in scattered radiation information.

Abstract: A method of measuring a position of an alignment target on a substrate using an optical system. The method includes measuring a sub-segmented target by illuminating the sub-segmented target with radiation and detecting radiation diffracted by the sub-segmented target using a detector system to obtain signals containing positional information of the one sub-segmented target. The sub-segmented target has structures arranged periodically in at least a first direction, at least some of the structures including smaller sub-structures, and each sub-segmented target is formed with a positional offset between the structures and the sub-structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of an alignment target which is corrected for the unknown component of the positional offset.

Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table, the lithographic apparatus further comprising a cooling apparatus (40) for cooling the substrate, wherein the cooling apparatus comprises a cooling element (42, 44) located above the substrate table and adjacent to the exposure area, the cooling element being configured to remove heat from the substrate.

Abstract: Disclosed is an illumination system for a metrology apparatus and a metrology apparatus comprising such an illumination system. The illumination system comprises an illumination source; and a linear variable filter arrangement configured to filter a radiation beam from said illumination source and comprising one or more linear variable filters. The illumination system is operable to enable selective control of a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement.

Abstract: An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

Abstract: A positioning system including: a first body; a second body; and an actuator arranged between the first body and the second body to position the first body relative to the second body, wherein the actuator includes a first piezoelectric actuator and a second piezoelectric actuator arranged in series, wherein the first piezoelectric actuator has a first hysteresis, wherein the second piezoelectric actuator has a second hysteresis smaller than the first hysteresis, and wherein the second piezoelectric actuator has a positioning range at least equal to the first hysteresis.

Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including: computing a multi-variable cost function, the multi-variable cost function being a function a plurality of design variables that represent characteristics of the lithographic process; and reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables until a certain termination condition is satisfied; wherein a bandwidth of a radiation source of the lithographic apparatus is allowed to change during the reconfiguration.

Abstract: Method of manufacturing electronic devices using a maskless lithographic exposure system using a maskless pattern writer. The method comprises generating beamlet control data for controlling the maskless pattern writer to expose a wafer for creation of the electronic devices, wherein the beamlet control data is generated based on a feature data set defining features selectable for individualizing the electronic devices, wherein exposure of the wafer according to the beamlet control data results in exposing a pattern having a different selection of the features from the feature data set for different subsets of the electronic devices.