Abstract: A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

Abstract: End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

Abstract: A lithographic projection apparatus is disclosed that comprises a substrate table, a projection system, a liquid confinement structure and a thermal measurement system. The substrate table is configured to support a substrate. The projection system is configured to direct a patterned beam of radiation on to a target portion of the substrate. The liquid confinement structure is configured to at least partly confine an immersion liquid to a space between the projection system and the substrate, the substrate table, or both. The thermal measurement system comprises a thermally sensitive coating. The thermal measurement system is configured to detect the temperature of the immersion liquid in contact with the coating. Also disclosed is a thermal measurement system, a metrology system comprising the thermal measurement system and a dummy wafer for the thermal measurement system.

Abstract: A lithographic method, among things is disclosed. The method includes using information at least indicative of a desired shape or size of a constituent part of a device to implement the desired shape or size of the constituent part of the device, the desired shape or size being related to a measured property of a layer of material in which the constituent part of the device is to be created, at least a part of the implementation comprising determining a configuration of a plurality of individually controllable elements that would be necessary to create in a radiation beam a pattern which is sufficient to implement the desired shape or size of the constituent part of the device when creating the constituent part of the device.

Abstract: A method to enable positioning of an object by a positioning device that includes an electromagnetic motor to control the position of the object in a lithographic apparatus, the method including receiving desired motor signals at the electromagnetic motor to produce a plurality of primary forces and a pitch torque associated with the primary forces within a motor control cycle, wherein for the motor control cycle, the pitch torque is based on either the primary forces to be generated by the electromagnetic motor or the desired forces and torques for positioning the object; and in response to the desired motor signals, causing the electromagnetic motor to generate the primary forces, wherein prior to the primary forces are determined for a next motor control cycle, the desired forces and torques for positioning the object are modified using the pitch torque associated with a previous motor control cycle.

Abstract: A detector to measure a property of radiation is disclosed. The detector comprises first and second luminescent uniaxial crystals each having an optic axis, the optic axis of the first uniaxial crystal being arranged such that it is substantially perpendicular to the optic axis of the second uniaxial crystal.

Abstract: A system for detecting motion of a body, the system comprising: a body; a first grating mounted substantially stationary relative to a frame of reference; a second grating mounted on the body; a detector arranged to receive one or more radiation beams diffracted at the first and second gratings thereby to detect motion of the body relative to the frame of reference; wherein the detector is coupled to the body and moveable relative to the body.

Abstract: The invention is directed to a method for at least partially removing a contamination layer (15) from an optical surface (14a) of an EUV-reflective optical element (14) by bringing a cleaning gas into contact with the contamination layer. In the method, a jet (20) of cleaning gas is directed to the contamination layer (15) for removing material from the contamination layer (15). The contamination layer (15) is monitored for generating a signal indicative of the thickness of the contamination layer (15) and the jet (20) of cleaning gas is controlled by moving the jet (20) of cleaning gas relative to the optical surface (14a) using this signal as a feedback signal. A cleaning arrangement (19 to 24) for carrying out the method is also disclosed. The invention also relates to a method for generating a jet (20) of cleaning gas and to a corresponding cleaning gas generation arrangement.

Abstract: A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract: An immersion lithography apparatus comprises a temperature controller configured to adjust a temperature of a projection system, a substrate and a liquid towards a common target temperature. Controlling the temperature of these elements and reducing temperature gradients may improve imaging consistency and general lithographic performance. Measures to control the temperature may include controlling the immersion liquid flow rate and liquid temperature, for example, via a feedback circuit.

Abstract: A thermal conditioning unit to thermally condition a substrate, the thermal conditioning unit including: a thermal conditioning element having a first layer, in use, facing the substrate and including a material having a thermal conductivity of 100 W/mK or more, a second layer and a heat transfer component positioned between the first and second layers; and a stiffening member which is stiffer than the thermal conditioning element and configured to support the thermal conditioning element so as to reduce mechanical deformation thereof, wherein the thermal conditioning element is thermally isolated from the stiffening member.

Abstract: A fuel supply for an EUV radiation source is disclosed. The fuel supply comprises a reservoir (40) for retaining a volume of fuel (42), a nozzle (32), in fluid connection with the reservoir, and configured to direct a stream of fuel along a trajectory towards a plasma formation location, and a fuel contamination control arrangement (44) which separates contamination particles from the fuel. The contamination control arrangement comprises at least one acoustic filter. The acoustic filter may apply an acoustic standing wave to the fuel. Also disclosed is a method of controlling contamination in such a fuel supply.

Abstract: A lithographic apparatus comprises a system. The system comprises a first part, a second part and an energy absorbing element. The second part is configured to move relatively to the first part. The system has a gap located between the first part and the second part during an operation mode of the system. The energy absorbing element is for absorbing energy between the first part and the second part when the first part and the second part crash onto each other in a failure mode of the system. The energy absorbing element is outside the gap.

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a cooling system to cool a part of the lithographic apparatus with increased cooling capabilities to reduce the heat transfer from the part to other parts of the apparatus.

Abstract: A conduit system for a lithographic apparatus is disclosed, the conduit system including a conduit configured to guide a liquid or liquid-gas mixture, and a gas injection nozzle configured to introduce a gas in the liquid or liquid-gas mixture to at least partially absorb pressure peaks or waves in the liquid or liquid-gas mixture. In an embodiment, the gas injection nozzle may be arranged in a pump of the conduit system. The pump further includes a pump inlet, a pump outlet and a pump chamber between the pump inlet and the pump outlet arranged for compression of the liquid or liquid-gas mixture.

Abstract: A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, the lithographic apparatus having a first object and a planar member mounted on the first object to improve thermal transfer to/from a second object.