Abstract: A lithographic apparatus includes an illuminator for receiving a beam of EUV radiation from a radiation source apparatus and for conditioning the beam to illuminate a target area of a patterning device, such as a reticle. The reticle forms a patterned radiation beam. A projection system transfers the pattern from said patterning device to a substrate by EUV lithography. Sensors are provided for detecting a residual asymmetry in the conditioned beam as the beam approaches the reticle, particularly in a non-scanning direction. A feedback control signal is generated to adjust a parameter of said radiation source in response to detected asymmetry. The feedback is based on a ratio of intensities measured by two sensors at opposite ends of an illumination slit, and adjusts the timing of laser pulses generating an EUV-emitting plasma.

Abstract: An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (?d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation.

Abstract: A spectral purity filter is configured to reflect extreme ultraviolet radiation. The spectral purity filter includes a substrate, and an anti-reflective coating on a top surface of the substrate. The anti-reflective coating is configured to transmit infrared radiation. The filter also includes a multi-layer stack configured to reflect extreme ultraviolet radiation and to substantially transmit infrared radiation.

Abstract: In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Abstract: A sealing member is provided to prevent immersion liquid ingress to a gap between components. The sealing member has a plastic or polymer sealing portion that is adhered to the components forming the gap being sealed. The sealing member is constructed so as to reduce the force-coupling, in particular the time-related force-coupling, between the components being sealed.

Abstract: An immersion lithographic apparatus is disclosed that has a fluid handling system configured to provide immersion liquid between a final element of a projection system and a surface which includes, in cross-section, a feature, and has an adjustment fluid source configured to locally change the composition of the immersion liquid to cause a local decrease in surface tension of the immersion liquid at least when a meniscus of the immersion liquid contacts the feature.

Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

Abstract: A lithographic apparatus and method for simultaneously exposing two patterning devices onto a substrate is disclosed. In an embodiment, a lithographic apparatus includes a plurality of illumination systems for receiving and conditioning a pulsed radiation beam, a beam director arranged between a source of the pulsed radiation and the illumination systems for alternately directing pulses of the radiation beam to the respective illumination systems, a support table for holding a plurality of patterning devices, each of the patterning devices being capable of imparting a respective conditioned radiation beam with a pattern in its cross-section to form a plurality of patterned radiation beams, and a projection system configured to project each of the plurality of patterned radiation beams coincidentally onto a target portion of a substrate. In an embodiment, the substrate is covered with a phase change material.

Abstract: An immersion lithographic apparatus typically includes a fluid handling system. The fluid handling system generally has a two-phase fluid extraction system configured to remove a mixture of gas and liquid from a given location. Because the extraction fluid comprises two phases, the pressure in the extraction system can vary. This pressure variation can be passed through the immersion liquid and cause inaccuracy in the exposure. To reduce the pressure fluctuation in the extraction system, a buffer chamber may be used. This buffer chamber may be connected to the fluid extraction system in order to provide a volume of gas which reduces pressure fluctuation. Alternatively or additionally, a flexible wall may be provided somewhere in the fluid extraction system. The flexible wall may change shape in response to a pressure change in the fluid extraction system. By changing shape, the flexible wall can help to reduce, or eliminate, the pressure fluctuation.

Abstract: In a lithographic device manufacturing method, sub-resolution assist features are provided to equalize the intensities of the diffraction orders that form the image of the pattern on the substrate. In the case of bright lines against a dark field used with a positive tone resist for forming trenches at or near resolution, the assist features may comprise narrow lines equidistantly between the feature lines. In this way an improvement of exposure latitude may be obtained without reduction of DOF.

Abstract: An arrangement actuates an element in a microlithographic projection exposure apparatus. The arrangement includes first and second actuators and first and second mechanical couplings. The first and second actuators are coupled to the element via corresponding ones of the first and second mechanical couplings for applying respective forces to the element which is regulatable in at least one degree of freedom. The first and second actuators have first and second actuator masses, respectively, and the first actuator mass and the first mechanical coupling conjointly define a first mass-spring system operating as a first low-pass filter. The second actuator mass and the second mechanical coupling conjointly define a second mass-spring system operating as a second low-pass filter. The first and second mass-spring systems have first and second natural frequencies deviating from each other by a maximum deviation equal to 10% of the largest of the first and second natural frequencies.

Abstract: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Abstract: A member with a cleaning surface for use in capturing particles in a lithographic apparatus is disclosed. The particles are captured by a plurality of projections which are arranged in a pattern. A sensor can be used to detect contaminant particles in the pattern.

Abstract: Numerical calculation of electromagnetic scattering properties and structural parameters of periodic structures is disclosed. A reflection coefficient has a representation as a bilinear or sesquilinear form. Computations of reflection coefficients and their derivatives for a single outgoing direction can benefit from an adjoint-state variable. Because the linear operator is identical for all angles of incidence that contribute to the same outgoing wave direction, there exists a single adjoint-state variable that generates all reflection coefficients from all incident waves that contribute to the outgoing wave. This adjoint-state variable can be obtained by numerically solving a single linear system, whereas one otherwise would need to solve a number of linear systems equal to the number of angles of incidence.

Abstract: A method of optimizing a die size in a method of manufacturing devices using a lithographic apparatus, wherein the lithographic apparatus is arranged to expose an image field of variable size in a single exposure step, the image field having a certain maximum size, the method comprising: receiving a desired area for the die; and calculating a target aspect ratio for the die, wherein the target aspect ratio is determined so as to maximize the number of good dies that can be imaged per hour using the lithographic apparatus. Desirably, calculating a target aspect ratio comprises finding a first target aspect ratio that maximizes a figure of merit MF, where MF is the ratio of the number of dies exposed in each image field divided by the number of exposures on each substrate.

Abstract: Systems and methods for processing wafers, a combined post expose bake and chill unit, and an interface are disclosed. An exemplary system includes a lithography tool, local track, transfer device, transfer device handler, interface unit, and controller to schedule processing. An exemplary combined post expose bake and chill unit includes an enclosure having an opening in its side, and a bake unit and a chill unit in the enclosure. An exemplary interface includes a plurality of enclosures arranged around robot(s) that transfer wafers among the enclosures, one of the plurality of enclosures being an integrated bake and chill unit.

Abstract: A fluid handling structure configured to supply immersion liquid to a space defined between a projection system and a facing surface facing the fluid handling structure is disclosed. An undersurface of the fluid handling structure has a supply opening configured to supply fluid toward the facing surface, a plurality of extraction openings configured to remove fluid from between the fluid handling structure and the facing surface, and a protrusion between the supply opening and the extraction openings.

Abstract: A method and apparatus for cleaning the inside of an immersion lithographic apparatus is disclosed. In particular, a liquid supply system of the lithographic apparatus may be used to introduce a cleaning fluid into a space between the projection system and the substrate table of the lithographic apparatus. Additionally or alternatively, a cleaning device may be provided on the substrate table and an ultrasonic emitter may be provided to create an ultrasonic cleaning liquid.