Abstract: An EUV radiation source includes a fuel supply configured to supply fuel to a plasma formation location. The fuel supply includes a nozzle configured to eject droplets of fuel, and a droplet accelerator configured to accelerate the fuel droplets. The EUV radiation source includes a laser radiation source configured to irradiate the fuel supplied by the fuel supply at the plasma formation location.

Abstract: An immersion lithographic apparatus that includes a substrate table, a fluid handling structure and a swap table. The substrate table is configured to support a substrate. The fluid handling structure is configured to supply and confine immersion liquid to a space defined between a projection system and the substrate table, the substrate, or both. The swap table has a shutter surface configured to be under the fluid handling structure during, for example, swap of the substrate on the substrate table. In use, a transfer surface between a surface of the substrate table and a surface of the swap table is moved under the fluid handling structure to help stop escaping immersion liquid. A shutter member and a method are also disclosed.

Abstract: An actuator is disclosed that includes a body, the body having a face, and a plurality of conduits located in the body, each conduit deformable in response to a change of pressure within the conduit, the deformation of the conduit configured to cause a deformation of the face.

Abstract: A collector assembly with a radiation collector, a cover plate and a support member connecting the radiation collector to the cover plate are provided. The cover plate is designed to cover an opening in a collector chamber. The collector chamber opening may be large enough to pass the radiation collector and the support member. The removed radiation collector can be cleaned with different cleaning procedures, which may be performed in a cleaning device. Such cleaning device may for example consist of the following: a circumferential hull designed to provide an enclosure volume for circumferentially enclosing at least the radiation collector; an inlet configured to provide at least one of a cleaning gas and a cleaning liquid to the enclosure volume to clean at least said radiation collector; and an outlet configured to remove said at least one of said cleaning gas and said cleaning liquid from the enclosure volume.

Abstract: A substrate stage is used in a lithographic apparatus. The substrate stage includes a substrate table constructed to hold a substrate and a positioning device for in use positioning the substrate table relative to a projection system of the lithographic apparatus. The positioning device includes a first positioning member mounted to the substrate table and a second positioning member co-operating with the first positioning member to position the substrate table. The second positioning member is mounted to a support structure. The substrate stage further comprises an actuator that is arranged to exert a vertical force on a bottom surface of the substrate table at a substantially fixed horizontal position relative to the support structure.

Abstract: A lithographic apparatus includes a plasma source that includes a vessel configured to enclose a plasma formation site, an optical device configured to transfer optical radiation to or from the vessel, and a reflector arranged in an optical path between the optical device and the plasma formation site source. The reflector is configured to reflect the optical radiation between the optical device and the plasma formation site. The reflector is formed, in operation, as a molten metal mirror.

Abstract: An apparatus (AS) measures positions of marks (202) on a lithographic substrate (W). A measurement optical system comprises illumination subsystem (504) for illuminating the mark with a spot of radiation (206) and as detecting subsystem (580) for detecting radiation diffracted by the mark. The substrate and measurement optical system move relative to one another at a first velocity (vW) so as to scan the mark while synchronously moving the spot of radiation relative to the reference frame (RF) of the measurement optical system at a second velocity (vSPOT). The spot scans the mark at a third velocity (vEFF) which is lower than the first velocity to allow more time for accurate position measurements to be acquired. In one embodiment, an objective lens (524) remains fixed in relation to the reference frame while a moving optical element (562) imparts the movement of the radiation spot relative to the reference frame.

Abstract: In an embodiment, a lithographic projection apparatus has an off-axis image field and a concave refractive lens as the final element of the projection system. The concave lens can be cut-away in parts not used optically to prevent bubbles from being trapped under the lens.

Abstract: A method of determining a structural parameter related to process-induced asymmetry, the method including: illuminating a structure, having an asymmetry property and a sub-structure susceptible to process-induced asymmetry, with radiation with a plurality of illumination conditions, at a first location of a substrate, determining a difference between measured asymmetry properties of the structure obtained with each of the plurality of illumination conditions, calculating a differential dependence of a difference between modeled asymmetry properties simulated for illumination by each of the plurality of illumination conditions on a structural parameter representing process-induced asymmetry of the sub-structure, and determining a value of the structural parameter using the determined difference and the calculated differential dependence.

Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to tools for co-optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention enables full chip pattern coverage while lowering the computation cost by intelligently selecting a small set of critical design patterns from the full set of clips to be used in source and mask optimization. Optimization is performed only on these selected patterns to obtain an optimized source. The optimized source is then used to optimize the mask (e.g. using OPC and manufacturability verification) for the full chip, and the process window performance results are compared. If the results are comparable to conventional full-chip SMO, the process ends, otherwise various methods are provided for iteratively converging on the successful result.

Abstract: Model-Based Sub-Resolution Assist Feature (SRAF) generation process and apparatus are disclosed, in which an SRAF guidance map (SGM) is iteratively optimized to finally output an optimized set of SRAFs as a result of enhanced signal strength obtained by iterations involving SRAF polygons and SGM image. SRAFs generated in a prior round of iteration are incorporated in a mask layout to generate a subsequent set of SRAFs. The iterative process is terminated when a set of SRAF accommodates a desired process window or when a predefined process window criterion is satisfied. Various cost functions, representing various lithographic responses, may be predefined for the optimization process.

Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract: A method of operating a fluid confinement system of an immersion lithographic apparatus is disclosed. The performance of the liquid confinement system is measured in several different ways. On the basis of the result of the measurement of performance, a signal indicating, for example, that a remedial action may need to be taken is generated.

Abstract: A lithographic projection system has an illumination system with a polarization member. A plurality of directing elements reflect different sub-beams of an incident beam into adjustable, individually controllable directions. By means of re-directing optics any desired polarized spatial intensity distribution of the beam can be produced in its cross-sectional plane.

Abstract: An optical arrangement, e.g. a projection exposure apparatus (1) for EUV lithography, includes: a housing (2) enclosing an interior space (15); at least one, preferably reflective optical element (4-10, 12, 14.1-14.6) arranged in the housing (2); at least one vacuum generating unit (3) for the interior space (15) of the housing (2); and at least one vacuum housing (18, 18.1-18.10) arranged in the interior space (15) and enclosing at least the optical surface (17, 17.1, 17.2) of the optical element (4-10, 12, 14.1-14.5). A contamination reduction unit is associated with the vacuum housing (18.1-18.10) and reduces the partial pressure of contaminating substances, in particular of water and/or hydrocarbons, at least in close proximity to the optical surface (17, 17.1, 17.2) in relation to the partial pressure of the contaminating substances in the interior space (15).

Abstract: A stage apparatus to position an object, the stage apparatus including a table configured to hold the object, a support structure configured to support the table, the table being displaceable relative to the support structure, the support structure including one of a first data clock and a second data clock and the table including the other one of the first data clock and the second data clock; and a circuit configured to synchronize the first and second data clocks, the circuit including a transmitter and receiver, the transmitter configured to wirelessly transmit clock signal data from the first data clock to the second data clock, and a synchronization circuit configured to synchronize the second data clock with the first data clock from the wirelessly transmitted clock signal data received by the receiver.

Abstract: A substrate table comprising a base and a plurality of burls that project from the base, wherein an upper surface of the burls is provided with a multilayer coating.

Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. A gas seal is formed between said structure and the surface of said substrate to contain liquid in the space.

Abstract: A lithographic apparatus includes a level sensor for use in positioning a target portion of the substrate with respect to a focal plane of the projection system, a pair of actuators, configured to move a substrate table of the lithographic apparatus, and a controller for moving the substrate relative to the level sensor by controlling the actuators. The controller combines motions of the first and second actuators to produce a combined movement having a speed higher than a maximum speed of at least one of the actuators individually.