Abstract: A capillary passage is formed between a substrate holder and an edge structure. Along the capillary passage are arranged a plurality of electrodes which, when charged, become liquidphilic. The electrodes may be used to split droplets of liquid and pump the liquid along the capillary passage.

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract: A method and apparatus are provided for determining apodization properties of a projection system in a lithographic apparatus. The method comprises allowing light from a given point in an illumination field to pass through the projection system along at least three different optical paths, and then determining the difference in the intensity of light received in a projection field from the two different optical paths, and calculating apodization properties of the projection system from the intensity difference. It is not necessary to know the intensity distribution in the illumination field. To provide the different optical paths a pinhole reticle provided with wedges of different orientations is used.

Abstract: A multivariable solver for proximity correction uses a Jacobian matrix to approximate effects of perturbations of segment locations in successive iterations of a design loop. The problem is formulated as a constrained minimization problem with box, linear equality, and linear inequality constraints. To improve computational efficiency, non-local interactions are ignored, which results in a sparse Jacobian matrix.

Abstract: A grating for EUV-radiation includes a plurality of reflecting lines. Each reflecting line includes a plurality of first reflecting dots, and a plurality of second reflecting dots arranged between each other. The first reflecting dots and the second reflecting dots are configured to reflect EUV-radiation with a mutual phase difference of 180±10 degrees mod 360 degrees.

Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and the substrate is filled with a liquid. An edge seal member at least partly surrounds the substrate or other object on a substrate table to prevent liquid loss when edge portions of the substrate or other object are, for example, imaged or illuminated.

Abstract: A lithographic apparatus, including a substrate table configured to hold a substrate; a positioner configured to position the substrate table relative to a projection system, the positioner including a short stroke module configured to perform fine positioning movements, on which the substrate table is held and which is supported on a long stroke module configured to perform coarse positioning movements; and a coverplate configured to at least partly cover a top surface of the short stroke module; wherein the coverplate is mounted to the long stroke module.

Abstract: Movements of a lithographic apparatus include dynamic positioning errors on one or more axes which cause corresponding errors which can be measured in the applied pattern. A test method includes operating the apparatus several times while deliberately imposing a relatively large dynamic positioning error at different specific frequencies and axes. Variations in the error in the applied pattern are measured for different frequencies and amplitudes of the injected error across a frequency band of interest for a given axis or axes. Calculation using said measurements and knowledge of the frequencies injected allows analysis of dynamic positioning error variations in frequency bands correlated with each injected error frequency.

Abstract: An immersion lithographic apparatus includes a liquid supply system member configured to contain a liquid in a space between a projection system of the lithographic apparatus and the substrate and a liquid supply system member compensator arranged to compensate an interaction between the liquid supply system member and substrate table.

Abstract: A vibration damping arrangement for a lithographic apparatus includes a sensor arranged to, in use, detect a vibration of a projection system. An actuator is arranged to, in use, exert a force on a control unit of the projection system to convert an output signal of the sensor to an actuator input signal such that, during operation, the vibration of the projection system is mitigated by controlling the actuator by the input signal to exert the force to the projection system.

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent. The radiation that is reflected off the substrate is radially polarized.

Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Abstract: Calibration of an angularly resolved scatterometer is performed by measuring a target in two or more different arrangements. The different arrangements cause radiation being measured in an outgoing direction to be different combinations of radiation illuminating the target from ingoing directions. A reference mirror measurement may also be performed. The measurements and modeling of the difference between the first and second arrangements is used to estimate separately properties of the ingoing and outgoing optical systems. The modeling may account for symmetry of the respective periodic target. The modeling typically accounts for polarizing effects of the ingoing optical elements, the outgoing optical elements and the respective periodic target. The polarizing effects may be described in the modeling by Jones calculus or Mueller calculus. The modeling may include a parameterization in terms of basis functions such as Zernike polynomials.

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract: A lithographic process is used to form a plurality of target structures (T) on a substrate (W). Each target structure comprises overlaid gratings each having a specific overlay bias. Asymmetry (A) of each grating, measured by scatterometry, includes contributions due to (i) the overlay bias, (ii) an overlay error (OV) in the lithographic process and (iii) bottom grating asymmetry within the overlaid gratings. Asymmetry measurements are obtained for three or more target structures having three or more different values of overlay bias (e.g., ?d, 0, +d). Knowing the three different overlay bias values and a theoretical curve relationship between overlay error and asymmetry, overlay error (OV) can be calculated while correcting the effect of bottom grating asymmetry. Bias schemes with three and four different biases are disclosed as examples. Gratings with different directions and biases can be interleaved in a composite target structure.

Abstract: An EUV radiation generation apparatus includes an optical gain medium configured to produce laser radiation for interaction with a target material to produce an EUV radiation-emitting plasma, and a structure defining an aperture through which the laser radiation may pass. The structure includes a radiation guide having an outer surface constructed and arranged to guide the laser radiation away from the optical gain medium.

Abstract: An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.

Abstract: A fluid handling structure has a plurality of openings acting as a meniscus pinning system operating on the gas drag principle and a gas knife outwardly of the meniscus pinning system to break-up any film of liquid left behind. The separation between the gas knife and the meniscus pinning system is selected from the range of 1 mm to 5 mm. Desirably the underside of a barrier member in which the gas knife and the meniscus pinning system are provided is continuous, e.g. has no openings, between the gas knife and the meniscus pinning system.

Abstract: A system and method are used to detect parameters regarding an exposure portion or an exposure beam. The system comprising a substrate stage and a metrology stage. The substrate stage is configured to position a substrate to receive an exposure beam from an exposure portion of a lithography system. The metrology stage has a sensor system thereon that is configured to detected parameters of the exposure system or the exposure beam. In one example, the system is within a lithography system, which further comprises an illumination system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the illumination system. The projection system, which is located within the exposure portion, projects that pattered beam onto the substrate or the sensor system.