Abstract: A lithographic apparatus includes a vessel that encloses a component with a test surface to be probed for contamination control; and an optical probe configured to transmit and receive an optical probing beam. The vessel includes a first optical port configured to transfer the optical probing beam towards the test surface, and a second optical port configured to receive a reflected optical probing beam. The optical probe includes a light source configured to provide the optical probing beam, a polarization conditioner configured to provide a predefined polarization state to the probing beam, and a spectral analyzer. The polarization conditioner is preset to provide a minimal transmission for a minimal transmission wavelength, and the spectral analyzer is arranged to detect a wavelength shift of the minimal transmission wavelength in response to a polarization change due to the presence of contamination.

Abstract: A lithographic projection apparatus is disclosed in which a space between the projection system and the substrate is filled with a liquid. An edge seal member at least partly surrounds the substrate or other object on a substrate table to prevent liquid loss when edge portions of the substrate or other object are, for example, imaged or illuminated. A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.

Abstract: A system to control the focus of a mask-less lithographic apparatus, the apparatus including a projection system to project an image of a programmable patterning device onto a substrate. A first actuator system is configured to move at least one of the lenses of the projection system in a direction perpendicular to the optical axis of the projection system. A radiation beam expander is configured to project an image of the programmable patterning device onto the at least one lens. A second actuator system is configured to move the radiation beam expander in a direction parallel to the optical axis of the projection system in order to control the focus of the image projected onto the substrate.

Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

Abstract: Liquid is supplied to a space between the projection system and the substrate by an inlet. In an embodiment, an overflow region removes liquid above a given level. The overflow region may be arranged above the inlet and thus the liquid may be constantly refreshed and the pressure in the liquid may remain substantially constant.

Abstract: Liquid is supplied to a space between the projection system and the substrate by an inlet. In an embodiment, an overflow region removes liquid above a given level. The overflow region may be arranged above the inlet and thus the liquid may be constantly refreshed and the pressure in the liquid may remain substantially constant.

Abstract: A method of optimizing an illumination pupil shape for a lithographic process comprises identifying a target pattern to be imaged by said lithographic process. It further comprises identifying at least one optimization point in said target pattern and identifying at least one design for manufacturing metric per optimization point. Additionally, it comprises selecting a set of illumination source points based on the identified at least one design for manufacturing metric and determining the illumination pupil shape based on the selected set of illumination source points.

Abstract: An exposure apparatus includes a radiation system configured to supply a projection beam of radiation, and a patterning device configured to pattern the projection beam according to a desired pattern. The apparatus includes a substrate table having an area configured to support a substrate, and a projection system configured to project the patterned beam onto a target portion of the substrate. At least a part of the apparatus that during use of the apparatus is exposed to radiation is coated with a coating. The coating includes a metal oxide, or a photocatalyst, or a semiconductor, or any combination thereof.

Abstract: The present invention relates generally to selecting optimum patterns based on diffraction signature analysis, and more particularly to, using the optimum patterns for mask-optimization for lithographic imaging. A respective diffraction map is generated for each of a plurality of target patterns from an initial larger set of target patterns from the design layout. Diffraction signatures are identified from the various diffraction maps. The plurality of target patterns is grouped into various diffraction-signature groups, the target patterns in a specific diffraction-signature group having similar diffraction signature. A subset of target patterns is selected to cover all possible diffraction-signature groups, such that the subset of target patterns represents at least a part of the design layout for the lithographic process. The grouping of the plurality of target patterns may be governed by predefined rules based on similarity of diffraction signature.

Abstract: A system for controlling a patterning device in a lithographic apparatus using a patterning device having individually controllable elements that may only be set to two states. The method includes converting a representation of a pattern to be formed on the substrate into a plurality of area intensity signals, each corresponding to a radiation intensity level required to be set in a respective area of the patterning device in order to provide the desired pattern on the substrate and a separate step of converting each of the area intensity signals into control signals for a plurality of individually controllable elements that each correspond to the area of the patterning device.

Abstract: In a lithographic apparatus, a part of a reflector is heated and cooled. The rate of heating and/or the rate of cooling is adjusted to adjust the temperature of the part. The change in temperature of the part exerts a force on the reflector, which changes its shape.

Abstract: A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.

Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.

Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.

Abstract: A method of determining an offset between an imprint template and a substrate using an alignment grating on the imprint template and an alignment grating on the substrate is disclosed. The method includes bringing the imprint template alignment grating and the substrate alignment grating sufficiently close together such that they form a composite grating, directing an alignment radiation beam at the composite grating while modulating the relative position of the imprint template and the substrate, detecting the intensity of alignment radiation which is reflected from the composite grating, and determining the offset by analyzing modulation of the detected intensity.

Abstract: In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.

Abstract: A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.

Abstract: An imprint template cover for an imprint template having a pattern feature thereon. The cover is configured such that, in use, it extends around the pattern feature of the imprint template, and such that the cover does not contact the pattern feature.