Abstract: The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

Abstract: An interface plate for mounting an apparatus or an assembly of an apparatus to a floor or floor plate is described, the interface plate comprising: an install block having an install surface configured to receive an interface surface of the apparatus or assembly; an adjustment mechanism configured to adjust a position or orientation of the install block relative to the floor or floor plate; and a mounting mechanism configured to rigidly mount the install block to the floor or floor plate.

Abstract: An emitter is configured to emit charged particles. The emitter comprises a body, a metal layer and a charged particle source layer. The body has a point. The metal layer is of a first metal on at least the point. The charged particle source layer is on the metal layer. The point comprises a second metal other than the first metal.

Abstract: A system for measuring the difference between a property of a first target and a property of a second target, the system comprising a first member and a second member, wherein the first member comprises a first pattern, and the speed of rotation of the first member is configured to be based on the property of the first target; and the second member comprises a second pattern wherein, the speed of rotation of the second member is configured to be based on the property of the second target, further wherein the first and second pattern are angularly-varying and are configured to generate an interference pattern by their interaction when the first and second members have a relative difference in their rotational speeds, the interference pattern being indicative of the magnitude of this difference.

Abstract: A support table for a lithographic apparatus, the support table having a support section and a conditioning system, wherein the support section, the conditioning system, or both, is configured such that heat transfer to or from a substrate supported on the support table, resulting from the operation of the conditioning system, is greater in a region of the substrate adjacent an edge of the substrate than it is in a region of the substrate that is at the center of the substrate.

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

Abstract: An apparatus for measuring a position of a mark on a substrate, the apparatus comprising: an illumination system configured to condition at least one radiation beam to form a plurality of illumination spots spatially distributed in series such that during scanning of the substrate the plurality of illumination spots are incident on the mark sequentially, and a projection system configured to project radiation diffracted by the mark from the substrate, the diffracted radiation being produced by diffraction of the plurality of illumination spots by the mark; wherein the projection system is further configured to modulate the diffracted radiation and project the modulated radiation onto a detecting system configured to produce signals corresponding to each of the plurality of illumination spots, the signals being combined to determine the position of the mark.

Abstract: A server for knowledge recommendation for defect review. The server includes a processor electronically coupled to an electronic storage device storing a plurality of knowledge files related to wafer defects. The processor is configured to execute a set of instruction to cause the server to: receive a request for knowledge recommendation for inspecting an inspection image from a defect classification server; search for a knowledge file in the electronic storage device that matches the inspection image; and transmit the search result to the defect classification server.

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Abstract: Disclosed is a method of determining a sampling scheme. The method comprises obtaining a parallel sensor description and identifying a plurality of candidate acquisition configurations based on said parallel sensor description and potential metrology locations. Each of said candidate acquisition configurations is evaluated in terms of an evaluation metric and a candidate acquisition configuration is selected based on said evaluation. The corresponding metrology locations for the selected acquisition configuration is added to the sampling scheme.

Abstract: A broadband radiation source device, including a fiber assembly having a plurality of optical fibers, each optical fiber being filled with a gas medium, wherein the broadband radiation source device is operable such that subsets of the optical fibers are independently selectable for receiving a beam of input radiation so as to generate a broadband output from only a subset of the plurality of optical fibers at any one time.

Abstract: Disclosed is an optical component, being configured to function as an optical frequency converter in a broadband radiation source device. The optical component comprises a gas cell, and a hollow-core photonic crystal fiber at least partially enclosed within said gas cell. The local cavity volume of said gas cell, where said hollow-core photonic crystal fiber is enclosed within the gas cell, comprises a maximum value of 36 cm3 per cm of length of said hollow-core photonic crystal fiber.

Abstract: A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

Abstract: A method of predicting deflection of a pellicle which will occur during movement of the pellicle in a lithographic apparatus, the method including receiving parameters regarding properties of the pellicle and receiving parameters regarding the expected movement of the pellicle. The parameters are applied to a model which predicts deflection of the pellicle as a function of those parameters. The model includes a plurality of sub-models which relate to different components of deflection of the pellicle. An output of the model may be used to predict.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

Abstract: Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.

Abstract: A method of tuning a prediction model relating to at least one particular configuration of a manufacturing device. The method includes obtaining a function including at least a first function of first prediction model parameters associated with the at least one particular configuration, and a second function of the first prediction model parameters and second prediction model parameters associated with configurations of the manufacturing device and/or related devices other than the at least one particular configuration. Values of the first prediction model parameters are obtained based on an optimization of the function, and a prediction model is tuned according to these values of the first prediction model parameters to obtain a tuned prediction mode.

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.