Abstract: The invention provides an apparatus configured for determining a distance of the apparatus to an object according to the principle of triangulation. The apparatus comprises a transmissive device with a predefined distance between a first surface and a second surface of the transmissive device, and a detector that is configured to receive at least a portion of a radiation beam after interaction with the transmissive device and the object. The first surface is arranged to reflect a first part of the radiation beam, and the second surface is arranged to reflect a second part of the radiation beam. The predefined distance is used for determining the distance of the apparatus to the object.

Abstract: A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.

Abstract: Designs are provided to reduce the possibility of contaminant particles with a large range of sizes, materials, travel speeds and angles of incidence reaching a particle-sensitive environment. According to an aspect of the disclosure, there is provided an object stage comprising first and second chambers, a first structure having a first surface, and a second structure. The second structure is configured to support an object in the second chamber, movable relative to the first structure. The second structure comprises a second surface opposing the first surface of the first structure thereby defining a gap between the first structure and the second structure that extends between the first chamber and the second chamber. The second structure further comprises a third surface within the first chamber. The object stage further comprises a trap disposed on at least a portion of the third surface, the trap comprising a plurality of baffles.

Abstract: A method for determining an overlay metric is disclosed including obtaining angle resolved distribution spectrum data relating to a measurement of a target structure including a symmetrical component. An overlay dependent contour of a feature of the target structure is determined from the angle resolved distribution spectrum data, from which an overlay metric is determined. The method includes exposing an exposed feature onto a masked layer including a mask which defines masked and unmasked areas of the layer, such that a first portion of the exposed feature is exposed on a masked area of the layer and a second portion of the exposed feature is exposed on a non-masked area of the layer, the size of the first portion with respect to the second portion being overlay dependent; and performing an etch step to define an etched feature, the etched feature corresponding to the second portion of the exposed feature.

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.

Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: A method of unloading an object from a support table, the object clamped to the support table during an exposure process by: applying a first pressure to a central region of the support table under a central portion of the object; and applying a second pressure to a peripheral region of the support table under a peripheral portion of the object, wherein during clamping the first pressure and the second pressure are controlled such that liquid is retained between the object and a seal member that is positioned radially between the central region and the peripheral region at an upper surface of the support table and protrudes towards the object, the method including: increasing the first pressure towards ambient pressure; removing at least some of the liquid retained between the object and the seal member by decreasing the second pressure; and increasing the second pressure towards the ambient pressure.

Abstract: Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

Abstract: The invention provides a pneumatic support device for a lithographic apparatus and a lithographic apparatus with such support device. The support device comprises a gas spring. The gas spring comprises a suspending part, a suspended part, and a pressure chamber configured for supporting the suspended part relative to the suspending part. The support device further comprises an actuator configured for positioning the suspended part relative to the suspending part, an acceleration sensor configured for generating a first sensor signal representative for the acceleration of the suspending part, a pressure sensor configured for generating a second sensor signal representative for the pressure in the pressure chamber, and a control unit.

Abstract: A lithographic apparatus includes a number of sensors for measuring positions of features on a substrate prior to applying a pattern. Each sensor includes an imaging optical system. Position measurements are extracted from pixel data supplied by an image detector in each sensor. The imaging optical system includes one or more light field modulating elements and the processor processes the pixel data as a light-field image to extract the position measurements. The data processor may derive from each light-field image a focused image of a feature on the substrate, measuring positions of several features simultaneously, even though the substrate is not at the same level below all the sensors. The processor can also include corrections to reduce depth dependency of an apparent position of the feature include a viewpoint correction. The data processor can also derive measurements of heights of features on the substrate.

Abstract: An apparatus (10) for increasing a pulse length of a pulsed radiation beam, the apparatus comprising: a beam splitter (16) configured to split an input radiation beam (18) into a first beam (24) and a second beam (22); an optical arrangement (12,14), wherein the beam splitter and the optical arrangement are configured such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement; and at least one optical element (30) in an optical path of the first beam, the at least one optical element configured such that the phase of different parts of a wavefront of the first beam is varied to reduce coherence between the first beam and the second beam.

Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

Abstract: A combined enrichment and radioisotope production apparatus comprising an electron source arranged to provide an electron beam, the electron source comprising an electron injector and an accelerator, an undulator configured to generate a radiation beam using the electron beam, a molecular stream generator configured to provide a stream of molecules which is intersected by the radiation beam, a receptacle configured to receive molecules or ions selectively received from the stream of molecules, and a target support structure configured to hold a target upon which the electron beam is incident in use.

Abstract: A system for heating an optical component of a lithographic apparatus, the system comprising a heating radiation source, the heating radiation source being configured to emit heating radiation for heating of the optical component, wherein the system is configured to direct the heating radiation emitted by the heating radiation source onto the optical component, a portion of the heating radiation being absorbed by the optical component and another portion of the heating radiation being reflected by optical component, and wherein the system is configured to vary or change a property of the heating radiation emitted by the heating radiation source such that the other portion of the heating radiation that is reflected by the optical component is constant during operation of the lithographic apparatus.

Abstract: Disclosed herein is a method comprising: depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rate of deposition during the first time period and an average rate of deposition during the second time period are different.

Abstract: Disclosed is an optical component, being configured to function as an optical frequency converter in a broadband radiation source device. The optical component comprises a gas cell, and a hollow-core photonic crystal fiber at least partially enclosed within said gas cell. The local cavity volume of said gas cell, where said hollow-core photonic crystal fiber is enclosed within the gas cell, comprises a maximum value of 36 cm3 per cm of length of said hollow-core photonic crystal fiber.